|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Matched pair Transistors
- MRF150MP
- MACOM
-
1:
¥4,929.5459
-
406库存量
|
Mouser 零件编号
937-MRF150MP
|
MACOM
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Matched pair Transistors
|
|
406库存量
|
|
最低: 1
倍数: 1
|
|
|
N-Channel
|
Si
|
16 A
|
125 V
|
|
150 MHz
|
17 dB
|
150 W
|
|
+ 200 C
|
SMD/SMT
|
221-11-3
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF POWER TRANS
- PD55008-E
- STMicroelectronics
-
1:
¥143.51
-
1,302库存量
|
Mouser 零件编号
511-PD55008-E
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF POWER TRANS
|
|
1,302库存量
|
|
最低: 1
倍数: 1
|
|
|
N-Channel
|
Si
|
4 A
|
40 V
|
|
1 GHz
|
17 dB
|
8 W
|
- 65 C
|
+ 150 C
|
SMD/SMT
|
PowerSO-10RF-Formed-4
|
Tube
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER RF Transistor
- PD54008L-E
- STMicroelectronics
-
1:
¥70.7267
-
3,425库存量
|
Mouser 零件编号
511-PD54008L-E
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER RF Transistor
|
|
3,425库存量
|
|
最低: 1
倍数: 1
:
3,000
|
|
|
N-Channel
|
Si
|
5 A
|
25 V
|
|
1 GHz
|
15 dB
|
8 W
|
- 65 C
|
+ 150 C
|
SMD/SMT
|
PowerFLAT (5x5)
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 5-500MHz 2Watts 28Volt Gain 16dB
- MRF158
- MACOM
-
1:
¥827.4877
-
514库存量
|
Mouser 零件编号
937-MRF158
|
MACOM
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 5-500MHz 2Watts 28Volt Gain 16dB
|
|
514库存量
|
|
最低: 1
倍数: 1
|
|
|
N-Channel
|
Si
|
500 mA
|
65 V
|
|
500 MHz
|
18 dB
|
2 W
|
- 65 C
|
+ 150 C
|
SMD/SMT
|
305A-01
|
Tray
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Pwr Transistors LDMOST Plastic N Ch
- PD54008-E
- STMicroelectronics
-
1:
¥128.707
-
1,533库存量
|
Mouser 零件编号
511-PD54008-E
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Pwr Transistors LDMOST Plastic N Ch
|
|
1,533库存量
|
|
最低: 1
倍数: 1
|
|
|
N-Channel
|
Si
|
5 A
|
25 V
|
|
1 GHz
|
11.5 dB
|
8 W
|
- 65 C
|
+ 150 C
|
SMD/SMT
|
PowerSO-10RF-Formed-4
|
Tube
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Pwr Transistors LDMOST Plastic N Ch
- PD57030-E
- STMicroelectronics
-
1:
¥412.5065
-
490库存量
|
Mouser 零件编号
511-PD57030-E
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Pwr Transistors LDMOST Plastic N Ch
|
|
490库存量
|
|
最低: 1
倍数: 1
|
|
|
N-Channel
|
Si
|
4 A
|
65 V
|
|
1 GHz
|
14 dB
|
30 W
|
- 65 C
|
+ 150 C
|
SMD/SMT
|
PowerSO-10RF-Formed-4
|
Tube
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Transistor,<175MHz,50V,150W,CuMollyPkg
- MRF151A
- MACOM
-
1:
¥2,904.4842
-
260库存量
|
Mouser 零件编号
937-MRF151A
|
MACOM
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Transistor,<175MHz,50V,150W,CuMollyPkg
|
|
260库存量
|
|
最低: 1
倍数: 1
|
|
|
N-Channel
|
Si
|
16 A
|
125 V
|
|
175 MHz
|
13 dB
|
150 W
|
- 65 C
|
+ 150 C
|
Screw Mount
|
244-4
|
Tray
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 5-400MHz 100Watts 28Volt Gain 12dB
- MRF177
- MACOM
-
1:
¥2,593.1466
-
340库存量
|
Mouser 零件编号
937-MRF177
|
MACOM
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 5-400MHz 100Watts 28Volt Gain 12dB
|
|
340库存量
|
|
最低: 1
倍数: 1
|
|
|
N-Channel
|
Si
|
16 A
|
65 V
|
|
400 MHz
|
12 dB
|
100 W
|
- 65 C
|
+ 150 C
|
SMD/SMT
|
744A-01
|
Tray
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 SMT Low Noise Amplifier, 10 MHz - 4 GHz
- TAV1-331NM+
- Mini-Circuits
-
1:
¥23.9899
-
378库存量
|
Mouser 零件编号
139-TAV1-331NM+
|
Mini-Circuits
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 SMT Low Noise Amplifier, 10 MHz - 4 GHz
|
|
378库存量
|
|
最低: 1
倍数: 1
:
500
|
|
|
N-Channel
|
GaAs
|
60 mA
|
4 V
|
|
10 MHz to 4 GHz
|
12.3 dB
|
21.5 dBm
|
- 40 C
|
+ 85 C
|
SMD/SMT
|
1.42 mm x 1.2 mm x 0.85 mm
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 BLC2425M10LS250/SOT1270/REELDP
- BLC2425M10LS250Y
- Ampleon
-
1:
¥1,006.2424
-
69库存量
-
Mouser 的新产品
|
Mouser 零件编号
94-BLC2425M10LS250Y
Mouser 的新产品
|
Ampleon
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 BLC2425M10LS250/SOT1270/REELDP
|
|
69库存量
|
|
最低: 1
倍数: 1
:
100
|
|
|
N-Channel
|
LDMOS
|
|
65 V
|
40.5 mOhms
|
2.4 GHz to 2.5 GHz
|
14.4 dB
|
250 W
|
|
+ 225 C
|
SMD/SMT
|
SOT1270-1-3
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 SMT Low Noise Amplifier, 45 MHz - 6 GHz
- TAV1-541NM+
- Mini-Circuits
-
1:
¥22.3288
-
377库存量
|
Mouser 零件编号
139-TAV1-541NM+
|
Mini-Circuits
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 SMT Low Noise Amplifier, 45 MHz - 6 GHz
|
|
377库存量
|
|
最低: 1
倍数: 1
:
500
|
|
|
N-Channel
|
GaAs
|
60 mA
|
4 V
|
|
45 MHz to 6 GHz
|
8.9 dB
|
20.3 dBm
|
- 40 C
|
+ 85 C
|
SMD/SMT
|
1.4 mm x 1.2 mm
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER RF Transistor
- PD55015S-E
- STMicroelectronics
-
1:
¥210.2591
-
228库存量
|
Mouser 零件编号
511-PD55015S-E
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER RF Transistor
|
|
228库存量
|
|
最低: 1
倍数: 1
|
|
|
N-Channel
|
Si
|
5 A
|
40 V
|
|
1 GHz
|
14 dB
|
15 W
|
- 65 C
|
+ 150 C
|
SMD/SMT
|
PowerSO-10RF-Straight-4
|
Tube
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 LOW NOISE AMPL / SM / RoHS
- TAV1-331+
- Mini-Circuits
-
1:
¥18.4416
-
2,008库存量
-
1,000预期 2026/10/19
|
Mouser 零件编号
139-TAV1-331
|
Mini-Circuits
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 LOW NOISE AMPL / SM / RoHS
|
|
2,008库存量
1,000预期 2026/10/19
|
|
最低: 1
倍数: 1
:
1,000
|
|
|
N-Channel
|
GaAs
|
60 mA
|
4 V
|
|
10 MHz to 4 GHz
|
12 dB
|
21.3 dBm
|
- 40 C
|
+ 85 C
|
SMD/SMT
|
MCLP-4
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF MOSFET (VDMOS) 170 V 150 W 175 MHz M174
- VRF151
- Microchip Technology
-
1:
¥580.0855
-
49库存量
-
237在途量
|
Mouser 零件编号
494-VRF151
|
Microchip Technology
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF MOSFET (VDMOS) 170 V 150 W 175 MHz M174
|
|
49库存量
237在途量
在途量:
75 预期 2026/10/14
162 预期 2027/4/26
|
|
最低: 1
倍数: 1
|
|
|
N-Channel
|
Si
|
16 A
|
180 V
|
|
175 MHz
|
22 dB
|
150 W
|
- 65 C
|
+ 150 C
|
Screw Mount
|
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 BLP15M9S30G/TO270/REEL
- BLP15M9S30GXY
- Ampleon
-
1:
¥228.2148
-
132库存量
-
Mouser 的新产品
|
Mouser 零件编号
94-BLP15M9S30GXY
Mouser 的新产品
|
Ampleon
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 BLP15M9S30G/TO270/REEL
|
|
132库存量
|
|
最低: 1
倍数: 1
:
100
|
|
|
N-Channel
|
LDMOS
|
|
32 V
|
30 mOhms
|
2 GHz
|
19 dB
|
30 W
|
|
+ 225 C
|
SMD/SMT
|
TO-270-2G-1-3
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF MOSFET (VDMOS) 500 V 150 W 65 MHz TO-247 Common Source
- ARF460BG
- Microchip Technology
-
1:
¥457.9212
-
63库存量
|
Mouser 零件编号
494-ARF460BG
|
Microchip Technology
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF MOSFET (VDMOS) 500 V 150 W 65 MHz TO-247 Common Source
|
|
63库存量
|
|
最低: 1
倍数: 1
|
|
|
N-Channel
|
Si
|
14 A
|
500 V
|
|
65 MHz
|
13 dB
|
150 W
|
- 55 C
|
+ 150 C
|
Through Hole
|
TO-247-3
|
Tube
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 5-175MHz 300Watts 28Volt Gain 12dB
- MRF141G
- MACOM
-
1:
¥4,804.8843
-
38库存量
|
Mouser 零件编号
937-MRF141G
|
MACOM
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 5-175MHz 300Watts 28Volt Gain 12dB
|
|
38库存量
|
|
最低: 1
倍数: 1
|
|
|
N-Channel
|
Si
|
32 A
|
65 V
|
|
175 MHz
|
12 dB
|
300 W
|
- 65 C
|
+ 150 C
|
SMD/SMT
|
375-04
|
Tray
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF MOSFET (VDMOS) 500 V 300 W 150 MHz T3A
- ARF475FL
- Microchip Technology
-
1:
¥1,120.2255
-
30库存量
|
Mouser 零件编号
494-ARF475FL
|
Microchip Technology
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF MOSFET (VDMOS) 500 V 300 W 150 MHz T3A
|
|
30库存量
|
|
最低: 1
倍数: 1
|
|
|
N-Channel
|
Si
|
10 A
|
500 V
|
|
150 MHz
|
15 dB
|
900 W
|
- 55 C
|
+ 175 C
|
Screw Mount
|
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF MOSFET (VDMOS) 500 V 100 W 100 MHz TO-247 Common Source
- ARF463AG
- Microchip Technology
-
1:
¥340.7854
-
48库存量
|
Mouser 零件编号
494-ARF463AG
|
Microchip Technology
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF MOSFET (VDMOS) 500 V 100 W 100 MHz TO-247 Common Source
|
|
48库存量
|
|
最低: 1
倍数: 1
|
|
|
N-Channel
|
Si
|
9 A
|
500 V
|
|
100 MHz
|
15 dB
|
100 W
|
- 55 C
|
+ 150 C
|
Through Hole
|
TO-247-3
|
Tube
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 300W 50V RF MOS 21dB 175MHz N-Ch
- STAC2942BW
- STMicroelectronics
-
1:
¥1,198.5571
-
99库存量
|
Mouser 零件编号
511-STAC2942BW
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 300W 50V RF MOS 21dB 175MHz N-Ch
|
|
99库存量
|
|
最低: 1
倍数: 1
|
|
|
N-Channel
|
Si
|
40 A
|
130 V
|
|
250 MHz
|
21 dB
|
350 W
|
- 65 C
|
+ 150 C
|
SMD/SMT
|
STAC244B
|
Bulk
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Power LDMOS Transistor, 300 W CW over 1.8-250 MHz, 50 V
- MRF300BN
- NXP Semiconductors
-
1:
¥863.659
-
150库存量
-
240预期 2027/1/6
-
寿命结束
|
Mouser 零件编号
771-MRF300BN
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Power LDMOS Transistor, 300 W CW over 1.8-250 MHz, 50 V
|
|
150库存量
240预期 2027/1/6
|
|
最低: 1
倍数: 1
|
|
|
N-Channel
|
Si
|
30 A
|
133 V
|
|
1.8 MHz to 250 MHz
|
20.4 dB
|
330 W
|
- 40 C
|
+ 150 C
|
Through Hole
|
TO-247-3
|
Tube
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Airfast Broadband RF Power LDMOS Transistor, 136-520 MHz, 70 W, 12.5 V
- AFT05MP075GNR1
- NXP Semiconductors
-
1:
¥336.288
-
272库存量
-
寿命结束
|
Mouser 零件编号
841-AFT05MP075GNR1
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Airfast Broadband RF Power LDMOS Transistor, 136-520 MHz, 70 W, 12.5 V
|
|
272库存量
|
|
最低: 1
倍数: 1
:
500
|
|
|
N-Channel
|
Si
|
8 A
|
40 V
|
|
136 MHz to 520 MHz
|
18.5 dB
|
70 W
|
- 40 C
|
+ 150 C
|
SMD/SMT
|
TO-270-WBG-4
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 100-500MHz 150Watts 28Volt 10dB
- MRF275G
- MACOM
-
1:
¥2,930.2143
-
5库存量
-
40预期 2027/2/5
|
Mouser 零件编号
937-MRF275G
|
MACOM
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 100-500MHz 150Watts 28Volt 10dB
|
|
5库存量
40预期 2027/2/5
|
|
最低: 1
倍数: 1
|
|
|
N-Channel
|
Si
|
26 A
|
65 V
|
|
100 MHz to 500 MHz
|
11.2 dB
|
150 W
|
- 65 C
|
+ 150 C
|
SMD/SMT
|
375-04
|
Tray
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF MOSFET (VDMOS) 500 V 270 W 45 MHz TO-264
Microchip Technology ARF468AG
- ARF468AG
- Microchip Technology
-
1:
¥541.7898
-
28库存量
|
Mouser 零件编号
494-ARF468AG
|
Microchip Technology
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF MOSFET (VDMOS) 500 V 270 W 45 MHz TO-264
|
|
28库存量
|
|
最低: 1
倍数: 1
|
|
|
|
Si
|
|
|
|
|
|
|
|
|
|
|
Tube
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF MOSFET (VDMOS) 1200 V 150 W 60 MHz TO-247 Common Source
Microchip Technology ARF465AG
- ARF465AG
- Microchip Technology
-
1:
¥511.3476
-
273库存量
|
Mouser 零件编号
494-ARF465AG
|
Microchip Technology
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF MOSFET (VDMOS) 1200 V 150 W 60 MHz TO-247 Common Source
|
|
273库存量
|
|
最低: 1
倍数: 1
|
|
|
N-Channel
|
Si
|
6 A
|
1.2 kV
|
|
60 MHz
|
13 dB
|
150 W
|
- 55 C
|
+ 150 C
|
Through Hole
|
|
Tube
|
|