iDEAL Semiconductor iS20M5R5S1H SuperQ™ N-Channel Power MOSFET
iDEAL Semiconductor iS20M5R5S1H SuperQ™ N-Channel Power MOSFET is engineered for high-efficiency SMPS and motor drives. This MOSFET features RDS(on) and switching charge (QSW), minimizing heat dissipation at both full and partial loads. The iS20M5R5S1H power MOSFET delivers ultra-low conduction and switching losses in a robust D2PAK-7L package. This MOSFET offers high Short-Circuit Withstand Capability (SCWC) and easier paralleling with ±0.5V gate threshold. Typical applications include motor control, secondary-side synchronous rectifiers, boost converters, and SMPS control FETs.
Features
- High Short-Circuit Withstand Capability (SCWC)
- Easier paralleling with ±0.5V gate threshold
- Low switching losses, QSW, and EOSS
- Industry leading RDS(on) in D2PAK-7L package
- 100% UIS tested in production
Applications
- Motor control
- Boost converters and SMPS control FETs
- Secondary-side synchronous rectifier
- Battery Management Systems (BMS)
- High-power DC-DC converters
- Switch-Mode Power Supplies (SMPS)
- Primary-side power switching
- Industrial power conversion systems
Specifications
- ±20V gate-to-source voltage
- 556A pulsed drain current
- 300W power dissipation at TC=25°C
- 553mJ avalanche energy (single pulse ID=105A and RGs=25Ω)
- 200V minimum drain-to-source voltage (VGS=0V and ID=1mA)
- 0.5°C/W junction-to-case thermal resistance
- -55°C to +175°C operating junction and storage temperature range
Dimension Diagram
发布日期: 2026-08-07
| 更新日期: 2026-08-12