STGW40M120DF3

STMicroelectronics
511-STGW40M120DF3
STGW40M120DF3

制造商:

说明:
绝缘栅双极晶体管(IGBT) Trench gate field-stop IGBT, M series 1200 V, 40 A low loss

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库存量: 374

库存:
374 可立即发货
生产周期:
22 周 大于所示数量的预计工厂生产时间。
最少: 1   倍数: 1
单价:
¥-.--
总价:
¥-.--
预估关税:

定价 (含13% 增值税)

数量 单价
总价
¥56.6582 ¥56.66
¥37.968 ¥379.68
¥30.5213 ¥3,052.13
¥24.2385 ¥14,543.10

产品属性 属性值 选择属性
STMicroelectronics
产品种类: 绝缘栅双极晶体管(IGBT)
RoHS:  
Si
TO-247-3
Through Hole
Single
1.2 kV
1.85 V
- 20 V, 20 V
80 A
468 W
- 55 C
+ 175 C
M
Tube
商标: STMicroelectronics
集电极最大连续电流 Ic: 40 A
栅极—射极漏泄电流: 250 nA
产品类型: IGBT Transistors
工厂包装数量: 600
子类别: IGBTs
单位重量: 38 g
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已选择的属性: 0

                        
ST NCNR & NON Warrantied

Stock on hand has no manufacture warranty.

If the end customer requires additional support please
process the request through your local Mouser
sales representative.

5-1013-36

合规代码
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99
原产地分类
原产国:
中国
组装原产国/地区:
不可用
扩散国家:
不可用
发货时,国家/地区可能会发生变化。

M Series 1200V Trench Gate Field-Stop IGBTs

STMicroelectronics M Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. These devices represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short circuit capability are essential. A positive VCE(sat) temperature coefficient and tight parameter distribution also result in safer paralleling operation. Typical applications for these devices include industrial drives, UPS, solar, and welding.