STGWA15M120DF3

Name: STMicroelectronics STGWA15M120DF3
Brand: STMicroelectronics
SKU: 511-STGWA15M120DF3
Price: 44.07 RMB
Availability: InStock

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Mouser编号：

511-STGWA15M120DF3

制造商编号：

STGWA15M120DF3

制造商：

STMicroelectronics

说明：

绝缘栅双极晶体管(IGBT) Trench gate field-stop IGBT, M series 1200 V, 15 A low loss

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数据表:

STGWA15M120DF3 数据表 (PDF)

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产品属性	属性值	选择属性
制造商:	STMicroelectronics
产品种类:	绝缘栅双极晶体管(IGBT)
RoHS:
技术:	Si
封装 / 箱体:	TO-247-3
安装风格:	Through Hole
配置:	Single
集电极—发射极最大电压 VCEO:	1.2 kV
集电极—射极饱和电压:	1.85 V
栅极/发射极最大电压:	- 20 V, 20 V
在25 C的连续集电极电流:	30 A
Pd-功率耗散:	283 W
最小工作温度:	- 55 C
最大工作温度:	+ 175 C
系列:	M
封装:	Tube
商标:	STMicroelectronics
栅极—射极漏泄电流:	250 nA
产品类型:	IGBT Transistors
工厂包装数量:	600
子类别:	IGBTs
单位重量:	38 g

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5-1013-36

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数据表

STGWA15M120DF3 数据表 (PDF)

PCN

合规代码

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

原产地分类

原产国:: 中国
组装原产国/地区:: 不可用
扩散国家:: 不可用

发货时，国家/地区可能会发生变化。

M Series 1200V Trench Gate Field-Stop IGBTs

STMicroelectronics M Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. These devices represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short circuit capability are essential. A positive V_CE(sat) temperature coefficient and tight parameter distribution also result in safer paralleling operation. Typical applications for these devices include industrial drives, UPS, solar, and welding.