|
|
射频(RF)双极晶体管 PNP RF Transistor
- MMBTH81
- onsemi
-
1:
¥2.0679
-
77,950预期 2027/7/19
|
Mouser 零件编号
512-MMBTH81
|
onsemi
|
射频(RF)双极晶体管 PNP RF Transistor
|
|
77,950预期 2027/7/19
|
|
|
¥2.0679
|
|
|
¥1.356
|
|
|
¥1.11644
|
|
|
¥0.81021
|
|
|
¥0.7119
|
|
|
¥0.39663
|
|
最低: 1
倍数: 1
最大: 3,000
:
3,000
|
|
|
|
|
射频开发工具 Redesign of QPD1014
- QPD1014AEVB
- Qorvo
-
1:
¥7,239.0964
-
3在途量
-
新产品
|
Mouser 零件编号
772-QPD1014AEVB
新产品
|
Qorvo
|
射频开发工具 Redesign of QPD1014
|
|
3在途量
|
|
最低: 1
倍数: 1
|
|
|
|
|
射频结栅场效应晶体管(RF JFET)晶体管 0.40 mm Pwr pHEMT
- QPD2040D
- Qorvo
-
100:
¥88.0609
-
300预期 2026/7/10
|
Mouser 零件编号
772-QPD2040D
|
Qorvo
|
射频结栅场效应晶体管(RF JFET)晶体管 0.40 mm Pwr pHEMT
|
|
300预期 2026/7/10
|
|
最低: 100
倍数: 100
:
100
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 LANDMOBILE 7W PLD1.5W
- AFT09MS007NT1
- NXP Semiconductors
-
1:
¥68.1729
-
12,208在途量
-
寿命结束
|
Mouser 零件编号
841-AFT09MS007NT1
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 LANDMOBILE 7W PLD1.5W
|
|
12,208在途量
在途量:
208 待发货
6,000 预期 2026/7/6
|
|
|
¥68.1729
|
|
|
¥52.3755
|
|
|
¥48.025
|
|
|
¥46.7255
|
|
|
查看
|
|
|
¥37.3465
|
|
|
¥44.1265
|
|
|
¥41.5162
|
|
|
¥39.8664
|
|
|
¥37.3465
|
|
最低: 1
倍数: 1
:
1,000
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 ART150FE/SOT467C/TRAY
- ART150FEU
- Ampleon
-
1:
¥1,162.0807
-
120预期 2026/11/20
-
Mouser 的新产品
|
Mouser 零件编号
94-ART150FEU
Mouser 的新产品
|
Ampleon
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 ART150FE/SOT467C/TRAY
|
|
120预期 2026/11/20
|
|
|
¥1,162.0807
|
|
|
¥946.5219
|
|
|
¥917.5713
|
|
|
报价
|
|
|
报价
|
|
最低: 1
倍数: 1
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Power LDMOS Transistor, 300 W CW over 1.8-250 MHz, 50 V
- MRF300AN
- NXP Semiconductors
-
1:
¥760.1284
-
479在途量
-
寿命结束
|
Mouser 零件编号
771-MRF300AN
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Power LDMOS Transistor, 300 W CW over 1.8-250 MHz, 50 V
|
|
479在途量
|
|
|
¥760.1284
|
|
|
¥637.659
|
|
|
¥567.147
|
|
最低: 1
倍数: 1
|
|
|
|
|
射频放大器 RF BIP TRANSISTORS
- BGB707L7ESDE6327XTSA1
- Infineon Technologies
-
1:
¥8.3507
-
14,683预期 2026/7/27
-
寿命结束
|
Mouser 零件编号
726-SP000531308
寿命结束
|
Infineon Technologies
|
射频放大器 RF BIP TRANSISTORS
|
|
14,683预期 2026/7/27
|
|
|
¥8.3507
|
|
|
¥6.7687
|
|
|
¥6.2489
|
|
|
¥5.7969
|
|
|
查看
|
|
|
¥4.6895
|
|
|
¥5.424
|
|
|
¥5.198
|
|
|
¥5.0285
|
|
|
¥4.8025
|
|
|
¥4.6895
|
|
|
¥4.6895
|
|
最低: 1
倍数: 1
:
7,500
|
|
|
|
|
射频开发工具 Redesign of QPD1011
- QPD1011AEVB
- Qorvo
-
1:
¥7,239.0964
-
3预期 2026/7/23
-
新产品
|
Mouser 零件编号
772-QPD1011AEVB
新产品
|
Qorvo
|
射频开发工具 Redesign of QPD1011
|
|
3预期 2026/7/23
|
|
最低: 1
倍数: 1
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 BLM9D1822S-60PBG/OMP-78/REELDP
- BLM9D1822S-60PBGY
- Ampleon
-
1:
¥499.686
-
200预期 2026/11/26
-
Mouser 的新产品
|
Mouser 零件编号
94-BLM9D1822S-60PBGY
Mouser 的新产品
|
Ampleon
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 BLM9D1822S-60PBG/OMP-78/REELDP
|
|
200预期 2026/11/26
|
|
|
¥499.686
|
|
|
¥434.0895
|
|
|
¥405.0598
|
|
|
¥381.2394
|
|
|
¥368.0862
|
|
|
查看
|
|
|
报价
|
|
最低: 1
倍数: 1
:
100
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 BLP15M9S70G/TO270/REEL
- BLP15M9S70GXY
- Ampleon
-
1:
¥242.5206
-
300预期 2026/10/8
-
Mouser 的新产品
|
Mouser 零件编号
94-BLP15M9S70GXY
Mouser 的新产品
|
Ampleon
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 BLP15M9S70G/TO270/REEL
|
|
300预期 2026/10/8
|
|
|
¥242.5206
|
|
|
¥194.134
|
|
|
¥180.0768
|
|
|
¥159.9741
|
|
|
¥151.872
|
|
|
查看
|
|
|
¥149.6346
|
|
|
报价
|
|
最低: 1
倍数: 1
:
100
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Power LDMOS transistor HF up to 1.5 GHz
- ST9045C
- STMicroelectronics
-
1:
¥734.0254
-
45预期 2026/7/21
|
Mouser 零件编号
511-ST9045C
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Power LDMOS transistor HF up to 1.5 GHz
|
|
45预期 2026/7/21
|
|
|
¥734.0254
|
|
|
¥606.5614
|
|
|
¥588.8543
|
|
最低: 1
倍数: 1
|
|
|
|
|
射频开发工具 Redesign of QPD1004
- QPD1004AEVB
- Qorvo
-
1:
¥7,239.0964
-
3预期 2026/7/31
-
新产品
|
Mouser 零件编号
772-QPD1004AEVB
新产品
|
Qorvo
|
射频开发工具 Redesign of QPD1004
|
|
3预期 2026/7/31
|
|
最低: 1
倍数: 1
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF MOSFET (VDMOS) 170 V 150 W 150 MHz M174
- VRF150
- Microchip Technology
-
1:
¥566.4351
-
156预期 2026/7/7
|
Mouser 零件编号
494-VRF150
|
Microchip Technology
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF MOSFET (VDMOS) 170 V 150 W 150 MHz M174
|
|
156预期 2026/7/7
|
|
|
¥566.4351
|
|
|
¥545.7561
|
|
|
查看
|
|
|
报价
|
|
最低: 1
倍数: 1
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Wideband RF Power LDMOS Transistor, 100 W CW over 1.8-250 MHz, 50 V
- MRF101BN
- NXP Semiconductors
-
1:
¥339.3277
-
724在途量
-
寿命结束
|
Mouser 零件编号
771-MRF101BN
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Wideband RF Power LDMOS Transistor, 100 W CW over 1.8-250 MHz, 50 V
|
|
724在途量
|
|
|
¥339.3277
|
|
|
¥276.1042
|
|
|
¥270.0248
|
|
|
¥250.8261
|
|
|
查看
|
|
|
¥243.0065
|
|
|
¥234.7575
|
|
最低: 1
倍数: 1
|
否
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Wideband RF Power LDMOS Transistor, 100 W CW over 1.8-250 MHz, 50 V
- MRF101AN
- NXP Semiconductors
-
1:
¥386.0532
-
2,405预期 2026/7/15
-
寿命结束
|
Mouser 零件编号
771-MRF101AN
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Wideband RF Power LDMOS Transistor, 100 W CW over 1.8-250 MHz, 50 V
|
|
2,405预期 2026/7/15
|
|
|
¥386.0532
|
|
|
¥315.4395
|
|
|
¥307.4617
|
|
|
¥276.0138
|
|
最低: 1
倍数: 1
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Transistor,40W,<500MHz,28V,TMOS
- MRF166W
- MACOM
-
1:
¥1,706.0175
-
40预期 2026/8/7
|
Mouser 零件编号
937-MRF166W
|
MACOM
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Transistor,40W,<500MHz,28V,TMOS
|
|
40预期 2026/8/7
|
|
|
¥1,706.0175
|
|
|
¥1,440.5805
|
|
最低: 1
倍数: 1
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF MOSFET (VDMOS) 170 V 150 W 175 MHz M174
- VRF151
- Microchip Technology
-
1:
¥580.0855
-
154在途量
|
Mouser 零件编号
494-VRF151
|
Microchip Technology
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF MOSFET (VDMOS) 170 V 150 W 175 MHz M174
|
|
154在途量
在途量:
79 预期 2026/7/8
75 预期 2026/10/26
|
|
最低: 1
倍数: 1
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 BLP15H9S100G/TO270/REEL
- BLP15H9S100GZ
- Ampleon
-
1:
¥226.3955
-
500预期 2026/9/21
-
Mouser 的新产品
|
Mouser 零件编号
94-BLP15H9S100GZ
Mouser 的新产品
|
Ampleon
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 BLP15H9S100G/TO270/REEL
|
|
500预期 2026/9/21
|
|
|
¥226.3955
|
|
|
¥182.3933
|
|
|
¥171.3871
|
|
|
¥164.6862
|
|
|
¥159.556
|
|
|
¥154.7648
|
|
最低: 1
倍数: 1
:
500
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 BLP9LA25SG/TO270/REEL
- BLP9LA25SGXY
- Ampleon
-
1:
¥179.2406
-
200预期 2026/7/21
-
Mouser 的新产品
|
Mouser 零件编号
94-BLP9LA25SGXY
Mouser 的新产品
|
Ampleon
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 BLP9LA25SG/TO270/REEL
|
|
200预期 2026/7/21
|
|
|
¥179.2406
|
|
|
¥133.9163
|
|
|
¥124.1531
|
|
|
¥110.2654
|
|
|
¥105.4629
|
|
|
查看
|
|
|
¥103.395
|
|
|
报价
|
|
最低: 1
倍数: 1
:
100
|
|
|
|
|
射频(RF)双极晶体管 NPN wideband silicon RF transistor
- BFU520WX
- NXP Semiconductors
-
1:
¥11.413
-
45,000预期 2027/2/16
-
寿命结束
|
Mouser 零件编号
771-BFU520WX
寿命结束
|
NXP Semiconductors
|
射频(RF)双极晶体管 NPN wideband silicon RF transistor
|
|
45,000预期 2027/2/16
|
|
|
¥11.413
|
|
|
¥7.91
|
|
|
¥6.1246
|
|
|
¥5.5144
|
|
|
查看
|
|
|
¥1.2656
|
|
|
¥5.0059
|
|
|
¥3.8194
|
|
|
¥3.0962
|
|
|
¥2.2939
|
|
|
¥1.2656
|
|
最低: 1
倍数: 1
:
3,000
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 26 GHz Medium Power Packaged GaAs FET
- MWT-773
- CML Micro
-
1:
¥500.703
-
100预期 2026/7/15
|
Mouser 零件编号
938-MWT-773
|
CML Micro
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 26 GHz Medium Power Packaged GaAs FET
|
|
100预期 2026/7/15
|
|
|
¥500.703
|
|
|
¥469.8653
|
|
|
¥454.4069
|
|
|
¥454.4069
|
|
最低: 1
倍数: 1
:
100
|
|
|
|
|
射频(RF)双极晶体管 RF BIP TRANSISTORS
- BFR843EL3E6327XTSA1
- Infineon Technologies
-
1:
¥6.5314
-
12,205预期 2026/12/10
-
寿命结束
|
Mouser 零件编号
726-BFR843EL3E6327XT
寿命结束
|
Infineon Technologies
|
射频(RF)双极晶体管 RF BIP TRANSISTORS
|
|
12,205预期 2026/12/10
|
|
|
¥6.5314
|
|
|
¥5.0624
|
|
|
¥4.1471
|
|
|
¥3.9663
|
|
|
查看
|
|
|
¥2.9945
|
|
|
¥3.842
|
|
|
¥3.6047
|
|
|
¥3.2657
|
|
|
¥2.9945
|
|
|
¥2.9945
|
|
最低: 1
倍数: 1
:
15,000
|
|
|
|
|
射频(RF)双极晶体管 NPN wideband silicon RF transistor
- BFU550WF
- NXP Semiconductors
-
1:
¥14.8934
-
10,000在途量
-
寿命结束
|
Mouser 零件编号
771-BFU550WF
寿命结束
|
NXP Semiconductors
|
射频(RF)双极晶体管 NPN wideband silicon RF transistor
|
|
10,000在途量
|
|
|
¥14.8934
|
|
|
¥10.3395
|
|
|
¥7.9665
|
|
|
¥7.1642
|
|
|
查看
|
|
|
¥1.7967
|
|
|
¥6.4975
|
|
|
¥4.972
|
|
|
¥4.0228
|
|
|
¥2.9719
|
|
|
¥1.7967
|
|
|
¥1.7967
|
|
最低: 1
倍数: 1
:
10,000
|
|
|
|
|
GaN 场效应晶体管 .03-3GHz Gain 17dB P3dB 9.3W@2.4GHz GaN
- TGF3015-SM
- Qorvo
-
1:
¥748.2295
-
353预期 2026/7/10
|
Mouser 零件编号
772-TGF3015-SM
|
Qorvo
|
GaN 场效应晶体管 .03-3GHz Gain 17dB P3dB 9.3W@2.4GHz GaN
|
|
353预期 2026/7/10
|
|
|
¥748.2295
|
|
|
¥712.5328
|
|
|
¥593.6342
|
|
|
¥486.1938
|
|
最低: 1
倍数: 1
|
|
|
|
|
射频(RF)双极晶体管 RF BIP TRANSISTOR
- BFP420H6327XTSA1
- Infineon Technologies
-
1:
¥3.8081
-
48,163预期 2027/2/4
-
寿命结束
|
Mouser 零件编号
726-BFP420H6327XTSA1
寿命结束
|
Infineon Technologies
|
射频(RF)双极晶体管 RF BIP TRANSISTOR
|
|
48,163预期 2027/2/4
|
|
|
¥3.8081
|
|
|
¥2.3956
|
|
|
¥1.9323
|
|
|
¥1.8419
|
|
|
¥1.7628
|
|
|
¥1.6611
|
|
最低: 1
倍数: 1
:
3,000
|
|
|