|
|
GaN 场效应晶体管 .03-3GHz Gain 17dB P3dB 9.3W@2.4GHz GaN
- TGF3015-SM
- Qorvo
-
1:
¥748.2295
-
253库存量
-
100预期 2026/7/10
|
Mouser 零件编号
772-TGF3015-SM
|
Qorvo
|
GaN 场效应晶体管 .03-3GHz Gain 17dB P3dB 9.3W@2.4GHz GaN
|
|
253库存量
100预期 2026/7/10
|
|
|
¥748.2295
|
|
|
¥712.5328
|
|
|
¥593.6342
|
|
|
¥486.1938
|
|
最低: 1
倍数: 1
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 100-200MHz 45Watts 28Volt Gain 17dB
- MRF171A
- MACOM
-
1:
¥1,189.8674
-
50预期 2026/10/13
|
Mouser 零件编号
937-MRF171A
|
MACOM
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 100-200MHz 45Watts 28Volt Gain 17dB
|
|
50预期 2026/10/13
|
|
|
¥1,189.8674
|
|
|
¥994.3322
|
|
最低: 1
倍数: 1
|
|
|
|
|
射频(RF)双极晶体管 RF BIP TRANSISTOR
- BFP420H6327XTSA1
- Infineon Technologies
-
1:
¥3.8081
-
48,163预期 2027/2/4
-
寿命结束
|
Mouser 零件编号
726-BFP420H6327XTSA1
寿命结束
|
Infineon Technologies
|
射频(RF)双极晶体管 RF BIP TRANSISTOR
|
|
48,163预期 2027/2/4
|
|
|
¥3.8081
|
|
|
¥2.3956
|
|
|
¥1.9323
|
|
|
¥1.8419
|
|
|
¥1.7628
|
|
|
¥1.6611
|
|
最低: 1
倍数: 1
:
3,000
|
|
|
|
|
GaN 场效应晶体管 DC-3.7GHz 65W 50V SSG 20dB GaN
- QPD1015L
- Qorvo
-
1:
¥2,703.0052
-
75库存量
|
Mouser 零件编号
772-QPD1015L
|
Qorvo
|
GaN 场效应晶体管 DC-3.7GHz 65W 50V SSG 20dB GaN
|
|
75库存量
|
|
|
¥2,703.0052
|
|
|
¥2,675.8965
|
|
|
¥2,051.6167
|
|
最低: 1
倍数: 1
|
|
|
|
|
射频结栅场效应晶体管(RF JFET)晶体管 0.60 mm Pwr pHEMT
- QPD2060D
- Qorvo
-
100:
¥97.4512
-
100预期 2026/7/20
|
Mouser 零件编号
772-QPD2060D
|
Qorvo
|
射频结栅场效应晶体管(RF JFET)晶体管 0.60 mm Pwr pHEMT
|
|
100预期 2026/7/20
|
|
最低: 100
倍数: 100
:
100
|
|
|
|
|
射频(RF)双极晶体管 Transistor,Bipolar,25W,28V,1.20-1.40GHz
MACOM PH1214-25M
- PH1214-25M
- MACOM
-
1:
¥4,771.0634
-
16预期 2026/11/24
|
Mouser 零件编号
937-PH1214-25M
|
MACOM
|
射频(RF)双极晶体管 Transistor,Bipolar,25W,28V,1.20-1.40GHz
|
|
16预期 2026/11/24
|
|
|
¥4,771.0634
|
|
|
¥4,314.4643
|
|
最低: 1
倍数: 1
|
|
|
|
|
GaN 场效应晶体管 DC-18GHZ 12W TQGaN25 PAE 73.3% Gain 21dB
- TGF2023-2-02
- Qorvo
-
100:
¥446.7681
-
100预期 2026/7/17
|
Mouser 零件编号
772-TGF2023-2-02
|
Qorvo
|
GaN 场效应晶体管 DC-18GHZ 12W TQGaN25 PAE 73.3% Gain 21dB
|
|
100预期 2026/7/17
|
|
最低: 100
倍数: 100
|
|
|
|
|
射频(RF)双极晶体管 NPN wideband silicon RF transistor
- BFU550WF
- NXP Semiconductors
-
1:
¥14.8934
-
10,000在途量
-
寿命结束
|
Mouser 零件编号
771-BFU550WF
寿命结束
|
NXP Semiconductors
|
射频(RF)双极晶体管 NPN wideband silicon RF transistor
|
|
10,000在途量
|
|
|
¥14.8934
|
|
|
¥10.3395
|
|
|
¥7.9665
|
|
|
¥7.1642
|
|
|
查看
|
|
|
¥1.7967
|
|
|
¥6.4975
|
|
|
¥4.972
|
|
|
¥4.0228
|
|
|
¥2.9719
|
|
|
¥1.7967
|
|
|
¥1.7967
|
|
最低: 1
倍数: 1
:
10,000
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Power LDMOS Transistor for Consumer and Commercial Cooking, 1.8-50 MHz, 300 W CW, 50 V
- MHT1803A
- NXP Semiconductors
-
1:
¥339.4181
-
239预期 2026/10/1
-
寿命结束
|
Mouser 零件编号
771-MHT1803A
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Power LDMOS Transistor for Consumer and Commercial Cooking, 1.8-50 MHz, 300 W CW, 50 V
|
|
239预期 2026/10/1
|
|
|
¥339.4181
|
|
|
¥276.1946
|
|
|
¥257.7756
|
|
|
¥234.1586
|
|
最低: 1
倍数: 1
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 LOW NOISE AMPL / SM / RoHS
- TAV1-331+
- Mini-Circuits
-
1:
¥141.8602
-
1,513在途量
|
Mouser 零件编号
139-TAV1-331
|
Mini-Circuits
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 LOW NOISE AMPL / SM / RoHS
|
|
1,513在途量
在途量:
500 预期 2026/7/13
13 预期 2026/7/16
1,000 预期 2026/10/19
|
|
|
¥141.8602
|
|
|
¥18.3625
|
|
|
¥17.289
|
|
|
¥16.5432
|
|
最低: 1
倍数: 1
:
500
|
|
|
|
|
射频(RF)双极晶体管 NPN Silicn RF TRNSTR 4.5V 50mA
- BFR 460L3 E6327
- Infineon Technologies
-
1:
¥5.2093
-
12,000在途量
-
寿命结束
|
Mouser 零件编号
726-BFR460L3E6327
寿命结束
|
Infineon Technologies
|
射频(RF)双极晶体管 NPN Silicn RF TRNSTR 4.5V 50mA
|
|
12,000在途量
|
|
|
¥5.2093
|
|
|
¥3.277
|
|
|
¥2.6442
|
|
|
¥2.5199
|
|
|
查看
|
|
|
¥1.8984
|
|
|
¥2.4182
|
|
|
¥2.2939
|
|
|
¥2.147
|
|
|
¥2.0001
|
|
|
¥1.8984
|
|
最低: 1
倍数: 1
:
15,000
|
|
|
|
|
射频开发工具 1500W, 65V,GaN pre-matched, 442(+/-5) MH
- QPD1026LEVB1
- Qorvo
-
1:
¥7,599.5325
-
1预期 2026/7/13
|
Mouser 零件编号
772-QPD1026LEVB1
|
Qorvo
|
射频开发工具 1500W, 65V,GaN pre-matched, 442(+/-5) MH
|
|
1预期 2026/7/13
|
|
最低: 1
倍数: 1
|
|
|
|
|
射频(RF)双极晶体管 SiGe:C MMIC Transistor
- BFU730LXZ
- NXP Semiconductors
-
1:
¥13.4018
-
21,500在途量
-
寿命结束
|
Mouser 零件编号
771-BFU730LXZ
寿命结束
|
NXP Semiconductors
|
射频(RF)双极晶体管 SiGe:C MMIC Transistor
|
|
21,500在途量
在途量:
1,500 预期 2026/10/8
20,000 预期 2027/11/19
|
|
|
¥13.4018
|
|
|
¥9.266
|
|
|
¥7.1642
|
|
|
¥6.4297
|
|
|
查看
|
|
|
¥1.6724
|
|
|
¥5.8534
|
|
|
¥4.4635
|
|
|
¥3.616
|
|
|
¥2.6668
|
|
|
¥1.6724
|
|
|
¥1.6724
|
|
最低: 1
倍数: 1
:
10,000
|
|
|
|
|
射频结栅场效应晶体管(RF JFET)晶体管 .45-6.0GHz NF .45dB Gain 15.5dB @ 2.4GHz
- SKY65050-372LF
- Skyworks Solutions, Inc.
-
1:
¥24.4871
-
3,000预期 2026/7/23
-
寿命结束
|
Mouser 零件编号
873-SKY65050-372LF
寿命结束
|
Skyworks Solutions, Inc.
|
射频结栅场效应晶体管(RF JFET)晶体管 .45-6.0GHz NF .45dB Gain 15.5dB @ 2.4GHz
|
|
3,000预期 2026/7/23
|
|
|
¥24.4871
|
|
|
¥16.7918
|
|
|
¥14.5544
|
|
|
¥14.4753
|
|
最低: 1
倍数: 1
:
3,000
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF MOSFET (VDMOS) 500 V 270 W 45 MHz TO-264
Microchip Technology ARF468AG
- ARF468AG
- Microchip Technology
-
1:
¥541.7898
-
30预期 2026/7/15
|
Mouser 零件编号
494-ARF468AG
|
Microchip Technology
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF MOSFET (VDMOS) 500 V 270 W 45 MHz TO-264
|
|
30预期 2026/7/15
|
|
最低: 1
倍数: 1
|
|
|
|
|
射频(RF)双极晶体管 RF BIP TRANSISTOR
- BFR360FH6327XTSA1
- Infineon Technologies
-
1:
¥3.0623
-
1,298预期 2026/11/26
-
寿命结束
|
Mouser 零件编号
726-BFR360FH6327XTSA
寿命结束
|
Infineon Technologies
|
射频(RF)双极晶体管 RF BIP TRANSISTOR
|
|
1,298预期 2026/11/26
|
|
|
¥3.0623
|
|
|
¥1.8645
|
|
|
¥1.469
|
|
|
¥1.4012
|
|
|
¥1.2656
|
|
|
查看
|
|
|
¥1.3447
|
|
|
¥1.2204
|
|
|
¥1.1752
|
|
|
¥1.1639
|
|
最低: 1
倍数: 1
:
3,000
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF MOSFET (VDMOS) 170 V 150 W 175 MHz M174 MATCHED PAIR
- VRF151MP
- Microchip Technology
-
1:
¥1,182.5111
-
10预期 2026/7/15
|
Mouser 零件编号
494-VRF151MP
|
Microchip Technology
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF MOSFET (VDMOS) 170 V 150 W 175 MHz M174 MATCHED PAIR
|
|
10预期 2026/7/15
|
|
最低: 1
倍数: 1
|
|
|
|
|
GaN 场效应晶体管 4-6GHz 5W 32Volt P3dB 38.4 dBm GaN
- TGF3020-SM
- Qorvo
-
1:
¥646.1792
-
40预期 2026/7/20
|
Mouser 零件编号
772-TGF3020-SM
|
Qorvo
|
GaN 场效应晶体管 4-6GHz 5W 32Volt P3dB 38.4 dBm GaN
|
|
40预期 2026/7/20
|
|
最低: 1
倍数: 1
|
|
|
|
|
射频(RF)双极晶体管 RF BIP TRANSISTOR
- BFP196WH6327XTSA1
- Infineon Technologies
-
1:
¥2.8928
-
4,386预期 2026/12/17
-
寿命结束
|
Mouser 零件编号
726-BFP196WH6327XTSA
寿命结束
|
Infineon Technologies
|
射频(RF)双极晶体管 RF BIP TRANSISTOR
|
|
4,386预期 2026/12/17
|
|
|
¥2.8928
|
|
|
¥1.7741
|
|
|
¥1.4012
|
|
|
¥1.3334
|
|
|
¥1.06672
|
|
最低: 1
倍数: 1
:
3,000
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 N-Ch Radio Freq 3A 20W 10V VDSS
- 2SK3079ATE12LQ
- Toshiba
-
1:
¥29.8659
-
998在途量
|
Mouser 零件编号
757-2SK3079ATE12LQ
|
Toshiba
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 N-Ch Radio Freq 3A 20W 10V VDSS
|
|
998在途量
|
|
|
¥29.8659
|
|
|
¥19.436
|
|
|
¥13.6504
|
|
|
¥11.9102
|
|
|
¥10.0118
|
|
|
¥9.9214
|
|
最低: 1
倍数: 1
:
1,000
|
|
|
|
|
射频(RF)双极晶体管 RF BIP TRANSISTOR
- BFR380FH6327XTSA1
- Infineon Technologies
-
1:
¥3.0623
-
3,369预期 2026/7/21
-
寿命结束
|
Mouser 零件编号
726-BFR380FH6327XTSA
寿命结束
|
Infineon Technologies
|
射频(RF)双极晶体管 RF BIP TRANSISTOR
|
|
3,369预期 2026/7/21
|
|
|
¥3.0623
|
|
|
¥1.8645
|
|
|
¥1.469
|
|
|
¥1.4012
|
|
|
¥1.2543
|
|
|
查看
|
|
|
¥1.3447
|
|
|
¥1.2204
|
|
|
¥1.1639
|
|
|
¥1.017
|
|
最低: 1
倍数: 1
:
3,000
|
|
|
|
|
射频(RF)双极晶体管 NPN Silicon RF TRANSISTOR
- BFP196E6327HTSA1
- Infineon Technologies
-
1:
¥2.8928
-
11,946预期 2027/1/28
-
寿命结束
|
Mouser 零件编号
726-BFP196E6327HTSA1
寿命结束
|
Infineon Technologies
|
射频(RF)双极晶体管 NPN Silicon RF TRANSISTOR
|
|
11,946预期 2027/1/28
|
|
|
¥2.8928
|
|
|
¥1.7289
|
|
|
¥1.3673
|
|
|
¥1.2995
|
|
|
¥1.243
|
|
|
¥0.97632
|
|
最低: 1
倍数: 1
:
3,000
|
|
|
|
|
射频(RF)双极晶体管 NPN RF Transistor 12V 80mA 580mW
- BFR193E6327HTSA1
- Infineon Technologies
-
1:
¥3.1414
-
3,106预期 2026/7/30
-
寿命结束
|
Mouser 零件编号
726-BFR193E6327HTSA1
寿命结束
|
Infineon Technologies
|
射频(RF)双极晶体管 NPN RF Transistor 12V 80mA 580mW
|
|
3,106预期 2026/7/30
|
|
|
¥3.1414
|
|
|
¥1.8984
|
|
|
¥1.5029
|
|
|
¥1.4351
|
|
|
¥1.3673
|
|
|
¥1.08367
|
|
最低: 1
倍数: 1
:
3,000
|
|
|
|
|
射频(RF)双极晶体管 RF BIP TRANSISTOR
- BFP640H6327XTSA1
- Infineon Technologies
-
1:
¥4.2149
-
12,000预期 2026/7/20
-
寿命结束
|
Mouser 零件编号
726-BFP640H6327XTSA1
寿命结束
|
Infineon Technologies
|
射频(RF)双极晶体管 RF BIP TRANSISTOR
|
|
12,000预期 2026/7/20
|
|
|
¥4.2149
|
|
|
¥2.6668
|
|
|
¥2.147
|
|
|
¥2.0566
|
|
|
¥1.9662
|
|
|
¥1.8306
|
|
最低: 1
倍数: 1
:
3,000
|
|
|
|
|
射频(RF)双极晶体管 NPN Silicon RF TRANSISTOR
- BFR35APE6327HTSA1
- Infineon Technologies
-
1:
¥2.5651
-
3,000预期 2026/8/13
-
寿命结束
|
Mouser 零件编号
726-BFR35APE6327HTSA
寿命结束
|
Infineon Technologies
|
射频(RF)双极晶体管 NPN Silicon RF TRANSISTOR
|
|
3,000预期 2026/8/13
|
|
|
¥2.5651
|
|
|
¥1.582
|
|
|
¥1.2543
|
|
|
¥1.1865
|
|
|
¥1.1413
|
|
|
¥1.06672
|
|
最低: 1
倍数: 1
:
3,000
|
|
|