|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 BLA9H0912L-1200P/SOT539/TRAY
- BLA9H0912L-1200PU
- Ampleon
-
1:
¥5,274.5462
-
125库存量
-
Mouser 的新产品
|
Mouser 零件编号
94-BLA9H0912L-1200PU
Mouser 的新产品
|
Ampleon
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 BLA9H0912L-1200P/SOT539/TRAY
|
|
125库存量
|
|
|
¥5,274.5462
|
|
|
¥5,274.0603
|
|
|
查看
|
|
|
报价
|
|
最低: 1
倍数: 1
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER RF Transistor
- PD57018-E
- STMicroelectronics
-
1:
¥257.9903
-
687库存量
|
Mouser 零件编号
511-PD57018-E
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER RF Transistor
|
|
687库存量
|
|
|
¥257.9903
|
|
|
¥188.9247
|
|
|
¥177.4213
|
|
最低: 1
倍数: 1
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Pwr Transistors LDMOST Plastic N Ch
- PD57030-E
- STMicroelectronics
-
1:
¥412.5065
-
521库存量
|
Mouser 零件编号
511-PD57030-E
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Pwr Transistors LDMOST Plastic N Ch
|
|
521库存量
|
|
|
¥412.5065
|
|
|
¥308.7838
|
|
|
¥299.1788
|
|
最低: 1
倍数: 1
|
|
|
|
|
MOSFET Transistor, MOSFET Nch, 100V(Vdss), 6.0A(Id), (4.5V Drive)
- RF4P060BGTCR
- ROHM Semiconductor
-
1:
¥10.0118
-
5,320库存量
-
3,000预期 2026/7/1
|
Mouser 零件编号
755-RF4P060BGTCR
|
ROHM Semiconductor
|
MOSFET Transistor, MOSFET Nch, 100V(Vdss), 6.0A(Id), (4.5V Drive)
|
|
5,320库存量
3,000预期 2026/7/1
|
|
|
¥10.0118
|
|
|
¥6.2489
|
|
|
¥4.1132
|
|
|
¥3.1866
|
|
|
¥2.7007
|
|
|
查看
|
|
|
¥2.8815
|
|
|
¥2.3052
|
|
|
¥2.26
|
|
最低: 1
倍数: 1
:
3,000
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Pwr Transistors LDMOST Plastic Fam
- PD57060-E
- STMicroelectronics
-
1:
¥538.7275
-
450库存量
|
Mouser 零件编号
511-PD57060-E
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Pwr Transistors LDMOST Plastic Fam
|
|
450库存量
|
|
|
¥538.7275
|
|
|
¥468.0121
|
|
|
¥386.121
|
|
|
报价
|
|
|
报价
|
|
最低: 1
倍数: 1
|
|
|
|
|
射频(RF)双极晶体管 2-30MHz 250Watts 50Volt Gain 12dB
- MRF448
- MACOM
-
1:
¥2,388.5036
-
327库存量
|
Mouser 零件编号
937-MRF448
|
MACOM
|
射频(RF)双极晶体管 2-30MHz 250Watts 50Volt Gain 12dB
|
|
327库存量
|
|
|
¥2,388.5036
|
|
|
¥2,016.9483
|
|
|
报价
|
|
|
报价
|
|
最低: 1
倍数: 1
|
|
|
|
|
射频(RF)双极晶体管 2-30MHz 150Watts 28Volt Gain 10dB
- MRF422
- MACOM
-
1:
¥2,590.8301
-
119库存量
|
Mouser 零件编号
937-MRF422
|
MACOM
|
射频(RF)双极晶体管 2-30MHz 150Watts 28Volt Gain 10dB
|
|
119库存量
|
|
|
¥2,590.8301
|
|
|
¥2,187.7591
|
|
|
报价
|
|
|
报价
|
|
最低: 1
倍数: 1
|
|
|
|
|
射频(RF)双极晶体管 NPN Silicon RF TRANSISTOR
- BFR182E6327HTSA1
- Infineon Technologies
-
1:
¥2.5651
-
12,785库存量
-
寿命结束
|
Mouser 零件编号
726-BFR182E6327HTSA1
寿命结束
|
Infineon Technologies
|
射频(RF)双极晶体管 NPN Silicon RF TRANSISTOR
|
|
12,785库存量
|
|
|
¥2.5651
|
|
|
¥1.582
|
|
|
¥1.2543
|
|
|
¥1.1865
|
|
|
¥1.06672
|
|
|
查看
|
|
|
¥1.1413
|
|
|
¥1.03395
|
|
|
¥1.02604
|
|
最低: 1
倍数: 1
:
3,000
|
|
|
|
|
射频(RF)双极晶体管 NPN Silicn Germanium RF Transistor
- BFR740L3RHE6327XTSA1
- Infineon Technologies
-
1:
¥6.78
-
6,596库存量
-
寿命结束
|
Mouser 零件编号
726-BFR740L3RHE6327X
寿命结束
|
Infineon Technologies
|
射频(RF)双极晶体管 NPN Silicn Germanium RF Transistor
|
|
6,596库存量
|
|
|
¥6.78
|
|
|
¥4.3618
|
|
|
¥3.5821
|
|
|
¥3.4239
|
|
|
查看
|
|
|
¥3.1527
|
|
|
¥3.3335
|
|
|
¥3.3222
|
|
|
¥3.1527
|
|
|
¥3.1527
|
|
最低: 1
倍数: 1
:
15,000
|
|
|
|
|
GaN 场效应晶体管 CLP24H4S30P/DFN-6.5X7/REEL
- CLP24H4S30PXY
- Ampleon
-
1:
¥643.7836
-
82库存量
-
新产品
|
Mouser 零件编号
94-CLP24H4S30PXY
新产品
|
Ampleon
|
GaN 场效应晶体管 CLP24H4S30P/DFN-6.5X7/REEL
|
|
82库存量
|
|
|
¥643.7836
|
|
|
¥535.0889
|
|
|
¥507.6299
|
|
|
¥478.0126
|
|
|
¥472.5547
|
|
|
查看
|
|
|
报价
|
|
最低: 1
倍数: 1
:
100
|
|
|
|
|
射频(RF)双极晶体管 TRANS GP BJT NPN 15V 0.045A
- BFR92PE6327HTSA1
- Infineon Technologies
-
1:
¥3.0623
-
88,108库存量
-
寿命结束
|
Mouser 零件编号
726-BFR92PE6327HTSA1
寿命结束
|
Infineon Technologies
|
射频(RF)双极晶体管 TRANS GP BJT NPN 15V 0.045A
|
|
88,108库存量
|
|
|
¥3.0623
|
|
|
¥1.8532
|
|
|
¥1.469
|
|
|
¥1.4012
|
|
|
¥1.2543
|
|
|
查看
|
|
|
¥1.3334
|
|
|
¥1.2204
|
|
|
¥1.1639
|
|
|
¥1.1526
|
|
最低: 1
倍数: 1
:
3,000
|
|
|
|
|
射频(RF)双极晶体管 RF BIP TRANSISTOR
- BFR 182W H6327
- Infineon Technologies
-
1:
¥3.0623
-
40,149库存量
-
寿命结束
|
Mouser 零件编号
726-BFR182WH6327
寿命结束
|
Infineon Technologies
|
射频(RF)双极晶体管 RF BIP TRANSISTOR
|
|
40,149库存量
|
|
|
¥3.0623
|
|
|
¥1.8645
|
|
|
¥1.469
|
|
|
¥1.4012
|
|
|
¥1.2656
|
|
|
查看
|
|
|
¥1.3447
|
|
|
¥1.2204
|
|
|
¥1.1752
|
|
|
¥1.1639
|
|
最低: 1
倍数: 1
:
3,000
|
|
|
|
|
射频(RF)双极晶体管 W/ANNEAL TXARRAY 3X NPN 2XPNP16NSOIC MIL
- HFA3096BZ
- Renesas / Intersil
-
1:
¥121.588
-
2,074库存量
|
Mouser 零件编号
968-HFA3096BZ
|
Renesas / Intersil
|
射频(RF)双极晶体管 W/ANNEAL TXARRAY 3X NPN 2XPNP16NSOIC MIL
|
|
2,074库存量
|
|
|
¥121.588
|
|
|
¥82.7725
|
|
|
¥61.7545
|
|
最低: 1
倍数: 1
|
|
|
|
|
JFET NCh RF Transistor
- MMBF5484
- onsemi
-
1:
¥3.8872
-
20,141库存量
|
Mouser 零件编号
512-MMBF5484
|
onsemi
|
JFET NCh RF Transistor
|
|
20,141库存量
|
|
|
¥3.8872
|
|
|
¥2.373
|
|
|
¥1.5029
|
|
|
¥1.12548
|
|
|
¥1.12548
|
|
最低: 1
倍数: 1
最大: 990
:
3,000
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF MOSFET (VDMOS) 500 V 300 W 150 MHz T3A
- ARF475FL
- Microchip Technology
-
1:
¥1,244.13
-
19库存量
|
Mouser 零件编号
494-ARF475FL
|
Microchip Technology
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF MOSFET (VDMOS) 500 V 300 W 150 MHz T3A
|
|
19库存量
|
|
|
¥1,244.13
|
|
|
查看
|
|
|
报价
|
|
最低: 1
倍数: 1
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF MOSFET (VDMOS) 170 V 300 W 150 MHz M177
- VRF2933
- Microchip Technology
-
1:
¥1,364.3959
-
23库存量
|
Mouser 零件编号
494-VRF2933
|
Microchip Technology
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF MOSFET (VDMOS) 170 V 300 W 150 MHz M177
|
|
23库存量
|
|
最低: 1
倍数: 1
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 5-175MHz 300Watts 28Volt Gain 12dB
- MRF141G
- MACOM
-
1:
¥4,846.4118
-
40库存量
|
Mouser 零件编号
937-MRF141G
|
MACOM
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 5-175MHz 300Watts 28Volt Gain 12dB
|
|
40库存量
|
|
|
¥4,846.4118
|
|
|
¥4,191.2152
|
|
最低: 1
倍数: 1
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 BLF647P/SOT1121/TRAY
- BLF647P,112
- Ampleon
-
1:
¥1,876.9074
-
183库存量
-
Mouser 的新产品
|
Mouser 零件编号
94-BLF647P112
Mouser 的新产品
|
Ampleon
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 BLF647P/SOT1121/TRAY
|
|
183库存量
|
|
|
¥1,876.9074
|
|
|
¥1,605.3571
|
|
|
¥1,564.824
|
|
|
报价
|
|
|
报价
|
|
最低: 1
倍数: 1
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 5-400MHz 30Watts 28Volt Gain 13dB
- MRF137
- MACOM
-
1:
¥931.1313
-
267库存量
|
Mouser 零件编号
937-MRF137
|
MACOM
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 5-400MHz 30Watts 28Volt Gain 13dB
|
|
267库存量
|
|
|
¥931.1313
|
|
|
¥774.5472
|
|
|
¥705.4816
|
|
最低: 1
倍数: 1
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 5-400MHz 15Watts 28Volt Gain 16dB
- MRF136
- MACOM
-
1:
¥828.2335
-
640库存量
|
Mouser 零件编号
937-MRF136
|
MACOM
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 5-400MHz 15Watts 28Volt Gain 16dB
|
|
640库存量
|
|
|
¥828.2335
|
|
|
¥688.9384
|
|
|
¥627.489
|
|
最低: 1
倍数: 1
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF MOSFET (VDMOS) 500 V 150 W 65 MHz TO-247 Common Source
- ARF460AG
- Microchip Technology
-
1:
¥468.6675
-
85库存量
|
Mouser 零件编号
494-ARF460AG
|
Microchip Technology
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF MOSFET (VDMOS) 500 V 150 W 65 MHz TO-247 Common Source
|
|
85库存量
|
|
|
¥468.6675
|
|
|
¥396.5396
|
|
|
¥378.4257
|
|
|
报价
|
|
|
报价
|
|
最低: 1
倍数: 1
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Wideband RF Power LDMOS Transistor, 136-941 MHz, 4 W, 7.5 V
- AFT05MS004NT1
- NXP Semiconductors
-
1:
¥46.9063
-
24,223库存量
-
寿命结束
|
Mouser 零件编号
841-AFT05MS004NT1
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Wideband RF Power LDMOS Transistor, 136-941 MHz, 4 W, 7.5 V
|
|
24,223库存量
|
|
|
¥46.9063
|
|
|
¥30.5778
|
|
|
¥26.8375
|
|
|
¥25.3572
|
|
|
¥18.8484
|
|
|
查看
|
|
|
¥23.9673
|
|
|
¥21.7977
|
|
|
¥20.0688
|
|
|
¥18.4077
|
|
最低: 1
倍数: 1
:
1,000
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF MOSFET (VDMOS) 500 V 100 W 100 MHz TO-247 Common Source
- ARF463AP1G
- Microchip Technology
-
1:
¥372.4706
-
400库存量
|
Mouser 零件编号
494-ARF463AP1G
|
Microchip Technology
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF MOSFET (VDMOS) 500 V 100 W 100 MHz TO-247 Common Source
|
|
400库存量
|
|
|
¥372.4706
|
|
|
¥351.8707
|
|
|
¥351.6221
|
|
|
报价
|
|
|
报价
|
|
最低: 1
倍数: 1
|
|
|
|
|
射频放大器 RF BIP TRANSISTORS
- BGB 707L7ESD E6327
- Infineon Technologies
-
1:
¥8.9383
-
4,132库存量
-
寿命结束
|
Mouser 零件编号
726-BGB707L7ESDE6327
寿命结束
|
Infineon Technologies
|
射频放大器 RF BIP TRANSISTORS
|
|
4,132库存量
|
|
|
¥8.9383
|
|
|
¥6.3732
|
|
|
¥5.7404
|
|
|
¥5.0511
|
|
|
查看
|
|
|
¥4.0793
|
|
|
¥4.7121
|
|
|
¥4.52
|
|
|
¥4.3731
|
|
|
¥4.181
|
|
|
¥4.0793
|
|
|
¥4.0793
|
|
最低: 1
倍数: 1
:
7,500
|
|
|
|
|
GaN 场效应晶体管 DC-6.0GHz 18 Watt 28V GaN
- T2G6001528-Q3
- Qorvo
-
1:
¥1,686.751
-
123库存量
|
Mouser 零件编号
772-T2G6001528-Q3
|
Qorvo
|
GaN 场效应晶体管 DC-6.0GHz 18 Watt 28V GaN
|
|
123库存量
|
|
|
¥1,686.751
|
|
|
¥1,669.8123
|
|
|
¥1,132.373
|
|
最低: 1
倍数: 1
|
|
|