|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMT65R015M2HXUMA1
- Infineon Technologies
-
1:
¥162.6183
-
4,000在途量
-
新产品
|
Mouser 零件编号
726-IMT65R015M2HXUMA
新产品
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
4,000在途量
在途量:
2,000 预期 2027/2/11
2,000 预期 2027/2/25
|
|
|
¥162.6183
|
|
|
¥123.8254
|
|
|
¥103.1464
|
|
|
¥91.982
|
|
|
¥85.9365
|
|
|
¥85.9365
|
|
最低： 1
倍数： 1
:
2,000
|
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMT65R040M2HXUMA1
- Infineon Technologies
-
1:
¥78.6593
-
3,972预期 2027/2/25
-
新产品
|
Mouser 零件编号
726-IMT65R040M2HXUMA
新产品
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
3,972预期 2027/2/25
|
|
|
¥78.6593
|
|
|
¥55.4152
|
|
|
¥44.8271
|
|
|
¥39.7873
|
|
|
¥35.3238
|
|
|
¥35.3238
|
|
最低： 1
倍数： 1
:
2,000
|
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET 650 V, 33 mohm G2
- IMZA65R033M2HXKSA1
- Infineon Technologies
-
1:
¥99.4287
-
6,480在途量
-
新产品
|
Mouser 零件编号
726-IMZA65R033M2HXKS
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET 650 V, 33 mohm G2
|
|
6,480在途量
在途量:
2,880 预期 2027/4/15
2,880 预期 2027/5/27
720 预期 2027/5/31
|
|
|
¥99.4287
|
|
|
¥71.9584
|
|
|
¥59.9691
|
|
|
¥53.3473
|
|
|
¥50.5449
|
|
最低： 1
倍数： 1
|
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMZA65R040M2HXKSA1
- Infineon Technologies
-
1:
¥82.8855
-
15,600在途量
|
Mouser 零件编号
726-IMZA65R040M2HXKS
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
15,600在途量
在途量:
10,080 预期 2027/4/1
5,520 预期 2027/4/29
|
|
|
¥82.8855
|
|
|
¥52.1947
|
|
|
¥44.1717
|
|
|
¥40.4427
|
|
最低： 1
倍数： 1
|
|
|
|
|
碳化硅MOSFET SIC 1700V MOS 28MO IN TO263-7L
- NTBG028N170M1
- onsemi
-
1:
¥332.1861
-
4,119在途量
|
Mouser 零件编号
863-NTBG028N170M1
|
onsemi
|
碳化硅MOSFET SIC 1700V MOS 28MO IN TO263-7L
|
|
4,119在途量
在途量:
119 预期 2026/6/17
2,400 预期 2026/9/11
800 预期 2026/11/6
800 预期 2027/5/10
|
|
|
¥332.1861
|
|
|
¥269.7423
|
|
|
¥253.6059
|
|
|
¥253.6059
|
|
最低： 1
倍数： 1
最大： 130
:
800
|
|
|
|
|
MOSFET模块 MOSFET SIC 1200 V 17 mOhm SOT-227
- MSC017SMA120J
- Microchip Technology
-
1:
¥403.2518
-
151预期 2026/6/22
|
Mouser 零件编号
579-MSC017SMA120J
|
Microchip Technology
|
MOSFET模块 MOSFET SIC 1200 V 17 mOhm SOT-227
|
|
151预期 2026/6/22
|
|
最低： 1
倍数： 1
|
|
|
|
|
绝缘栅双极晶体管(IGBT) Short circuit rugged 1200 V TRENCHSTOP IGBT 7 technology
- AIGBG25N120S7ATMA1
- Infineon Technologies
-
1:
¥38.6234
-
1,000预期 2026/7/16
-
新产品
|
Mouser 零件编号
726-AIGBG25N120S7ATM
新产品
|
Infineon Technologies
|
绝缘栅双极晶体管(IGBT) Short circuit rugged 1200 V TRENCHSTOP IGBT 7 technology
|
|
1,000预期 2026/7/16
|
|
|
¥38.6234
|
|
|
¥25.312
|
|
|
¥18.8597
|
|
|
¥16.4641
|
|
|
¥13.899
|
|
|
¥13.7295
|
|
最低： 1
倍数： 1
:
1,000
|
|
|
|
|
碳化硅MOSFET SiC, MOSFET, 40mO, 1200V, TO-247-3, Industrial
- C3M0040120D
- Wolfspeed
-
1:
¥107.3613
-
443预期 2026/7/17
|
Mouser 零件编号
941-C3M0040120D
|
Wolfspeed
|
碳化硅MOSFET SiC, MOSFET, 40mO, 1200V, TO-247-3, Industrial
|
|
443预期 2026/7/17
|
|
|
¥107.3613
|
|
|
¥64.6021
|
|
|
¥56.0819
|
|
最低： 1
倍数： 1
|
|
|
|
|
碳化硅MOSFET SiC MOSFET,TO-247AB
- SICW025N065H-BP
- Micro Commercial Components (MCC)
-
1:
¥126.6391
-
177库存量
-
工厂特别订单
|
Mouser 零件编号
833-SICW025N065H-BP
工厂特别订单
|
Micro Commercial Components (MCC)
|
碳化硅MOSFET SiC MOSFET,TO-247AB
|
|
177库存量
|
|
|
¥126.6391
|
|
|
¥91.2362
|
|
|
¥76.0151
|
|
最低： 1
倍数： 1
|
|
|
|
|
碳化硅MOSFET SiC MOSFET,TO-247AB
- SICW100N065H-BP
- Micro Commercial Components (MCC)
-
1:
¥62.9523
-
337库存量
-
工厂特别订单
|
Mouser 零件编号
833-SICW100N065H-BP
工厂特别订单
|
Micro Commercial Components (MCC)
|
碳化硅MOSFET SiC MOSFET,TO-247AB
|
|
337库存量
|
|
|
¥62.9523
|
|
|
¥42.1038
|
|
|
¥33.9113
|
|
最低： 1
倍数： 1
|
|
|
|
|
碳化硅MOSFET SiC MOSFET,TO-247-4
- SICW100N065H4-BP
- Micro Commercial Components (MCC)
-
1:
¥63.5286
-
360库存量
-
工厂特别订单
|
Mouser 零件编号
833-SICW100N065H4-BP
工厂特别订单
|
Micro Commercial Components (MCC)
|
碳化硅MOSFET SiC MOSFET,TO-247-4
|
|
360库存量
|
|
|
¥63.5286
|
|
|
¥42.5106
|
|
|
¥34.1599
|
|
最低： 1
倍数： 1
|
|
|
|
|
分立半导体模块 PM-MOSFET-SIC-SBD-SOT227
- MSC100SM70JCU3
- Microchip Technology
-
1:
¥412.9133
-
86在途量
|
Mouser 零件编号
494-MSC100SM70JCU3
|
Microchip Technology
|
分立半导体模块 PM-MOSFET-SIC-SBD-SOT227
|
|
86在途量
在途量:
33 预期 2026/8/17
53 预期 2026/10/12
|
|
最低： 1
倍数： 1
|
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package
- SCT015W120G3-4AG
- STMicroelectronics
-
1:
¥269.4033
-
600预期 2026/6/23
|
Mouser 零件编号
511-SCT015W120G3-4AG
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package
|
|
600预期 2026/6/23
|
|
|
¥269.4033
|
|
|
¥202.157
|
|
|
¥183.7945
|
|
|
报价
|
|
|
报价
|
|
最低： 1
倍数： 1
|
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an H2PAK-7 package
- SCT040H120G3AG
- STMicroelectronics
-
1:
¥112.7401
-
996预期 2026/9/7
|
Mouser 零件编号
511-SCT040H120G3AG
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an H2PAK-7 package
|
|
996预期 2026/9/7
|
|
|
¥112.7401
|
|
|
¥78.6593
|
|
|
¥63.9354
|
|
|
¥60.4663
|
|
最低： 1
倍数： 1
:
1,000
|
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HU3PAK package
- SCT040HU120G3AG
- STMicroelectronics
-
1:
¥119.5201
-
1,200在途量
-
新产品
|
Mouser 零件编号
511-SCT040HU120G3AG
新产品
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HU3PAK package
|
|
1,200在途量
在途量:
600 预期 2026/8/10
600 预期 2027/3/12
|
|
|
¥119.5201
|
|
|
¥83.7104
|
|
|
¥73.6986
|
|
|
¥65.2575
|
|
最低： 1
倍数： 1
:
600
|
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HU3PAK package
- SCT070HU120G3AG
- STMicroelectronics
-
1:
¥119.6896
-
1,199预期 2026/7/2
|
Mouser 零件编号
511-SCT070HU120G3AG
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HU3PAK package
|
|
1,199预期 2026/7/2
|
|
|
¥119.6896
|
|
|
¥84.6144
|
|
|
¥69.9809
|
|
|
¥66.1728
|
|
最低： 1
倍数： 1
:
600
|
|
|
|
|
碳化硅MOSFET CoolSiC Automotive MOSFET 750 V G2 in Q-DPAK
- AIMDQ75R004M2HXTMA1
- Infineon Technologies
-
1:
¥583.8936
-
50在途量
-
新产品
|
Mouser 零件编号
726-AIMDQ75R004M2HXT
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC Automotive MOSFET 750 V G2 in Q-DPAK
|
|
50在途量
|
|
|
¥583.8936
|
|
|
¥507.3022
|
|
|
¥418.4616
|
|
|
¥418.4616
|
|
最低： 1
倍数： 1
:
750
|
|
|
|
|
碳化硅MOSFET Automotive SiC MOSFET, 750 V
- AIMZA75R007M2HXKSA1
- Infineon Technologies
-
1:
¥328.0503
-
210预期 2026/6/29
-
新产品
|
Mouser 零件编号
726-AIMZA75R007M2HXK
新产品
|
Infineon Technologies
|
碳化硅MOSFET Automotive SiC MOSFET, 750 V
|
|
210预期 2026/6/29
|
|
|
¥328.0503
|
|
|
¥267.6744
|
|
|
¥236.4864
|
|
最低： 1
倍数： 1
|
|
|
|
|
碳化硅MOSFET Automotive SiC MOSFET, 750 V
- AIMZA75R011M2HXKSA1
- Infineon Technologies
-
1:
¥253.7754
-
240在途量
-
新产品
|
Mouser 零件编号
726-AIMZA75R011M2HXK
新产品
|
Infineon Technologies
|
碳化硅MOSFET Automotive SiC MOSFET, 750 V
|
|
240在途量
|
|
|
¥253.7754
|
|
|
¥203.1514
|
|
|
¥175.6924
|
|
最低： 1
倍数： 1
|
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R053M2HXTMA1
- Infineon Technologies
-
1:
¥74.6139
-
1,968在途量
|
Mouser 零件编号
726-IMBG120R053M2HXT
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
1,968在途量
|
|
|
¥74.6139
|
|
|
¥50.9517
|
|
|
¥37.7194
|
|
|
¥35.6515
|
|
最低： 1
倍数： 1
:
1,000
|
|
|
|
|
碳化硅MOSFET CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package
- IMBG120R220M1HXTMA1
- Infineon Technologies
-
1:
¥58.7261
-
2,512在途量
|
Mouser 零件编号
726-IMBG120R220M1HXT
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package
|
|
2,512在途量
在途量:
512 预期 2026/12/31
1,000 预期 2027/1/28
1,000 预期 2027/3/25
|
|
|
¥58.7261
|
|
|
¥39.2901
|
|
|
¥31.5948
|
|
|
¥28.0353
|
|
|
¥24.8939
|
|
最低： 1
倍数： 1
:
1,000
|
|
|
|
|
碳化硅MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
- IMW120R090M1HXKSA1
- Infineon Technologies
-
1:
¥82.1397
-
1,440在途量
|
Mouser 零件编号
726-IMW120R090M1HXKS
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
|
|
1,440在途量
在途量:
960 预期 2026/8/13
480 预期 2026/8/20
|
|
|
¥82.1397
|
|
|
¥56.0819
|
|
|
¥46.2396
|
|
|
¥41.1885
|
|
最低： 1
倍数： 1
|
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMW65R020M2HXKSA1
- Infineon Technologies
-
1:
¥125.4752
-
1,200在途量
|
Mouser 零件编号
726-IMW65R020M2HXKSA
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
1,200在途量
在途量:
960 预期 2026/6/29
240 预期 2026/8/27
|
|
|
¥125.4752
|
|
|
¥92.9764
|
|
|
¥76.4332
|
|
|
¥69.5628
|
|
最低： 1
倍数： 1
|
|
|
|
|
碳化硅MOSFET SIC DISCRETE
- IMWH170R450M1XKSA1
- Infineon Technologies
-
1:
¥73.6195
-
1,910预期 2026/8/27
|
Mouser 零件编号
726-IMWH170R450M1XKS
|
Infineon Technologies
|
碳化硅MOSFET SIC DISCRETE
|
|
1,910预期 2026/8/27
|
|
|
¥73.6195
|
|
|
¥49.381
|
|
|
¥35.4029
|
|
|
¥33.7531
|
|
|
¥30.7699
|
|
最低： 1
倍数： 1
|
|
|
|
|
碳化硅MOSFET CoolSiC 1200 V SiC MOSFET G2
- IMZA120R053M2HXKSA1
- Infineon Technologies
-
1:
¥91.1571
-
480预期 2026/7/9
-
新产品
|
Mouser 零件编号
726-IMZA120R053M2HXK
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC 1200 V SiC MOSFET G2
|
|
480预期 2026/7/9
|
|
|
¥91.1571
|
|
|
¥64.4326
|
|
|
¥53.6863
|
|
|
¥47.8103
|
|
最低： 1
倍数： 1
|
|
|
