Single SiC 半导体

结果: 1,077
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS
Qorvo GaN 场效应晶体管 Redesign of QPD1011
Qorvo GaN 场效应晶体管 Redesign of QPD1014
SemiQ MOSFET模块 Gen3 1200V 8mohm SiC MOSFET & SBD Module, SOT-227

SemiQ MOSFET模块 1200V SBD Module, 9mohm COPACK, SOT-227

SemiQ MOSFET模块 Gen3 1200V 16mohm SiC MOSFET & SBD Module, SOT-227

SemiQ 分立半导体模块 SiC 1200V 20mohm MOSFET & 50A SBD SOT-227

SemiQ MOSFET模块 Gen3 1200V 40mohm SiC MOSFET & SBD Module, SOT-227

SemiQ MOSFET模块 Gen3 1200V 80mohm SiC MOSFET & SBD Module, SOT-227

SemiQ MOSFET模块 Gen3 1200V 8mohm SiC MOSFET Module, SOT-227

SemiQ MOSFET模块 1700V, 15mohm SiC MOSFET Module, SOT-227

SemiQ MOSFET模块 Gen3 1200V 16mohm SiC MOSFET Module, SOT-227

SemiQ MOSFET模块 Gen3 1200V 40mohm SiC MOSFET Module, SOT-227

SemiQ MOSFET模块 Gen3 1200V 80mohm SiC MOSFET Module, SOT-227

SemiQ 碳化硅MOSFET SiC MOSFET 1700V, 30mohm TO-247-4L, Industrial

SemiQ 碳化硅MOSFET Gen3 1200V, 16mohm SiC MOSFET, TO-247-4L

STMicroelectronics 碳化硅MOSFET Silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package

STMicroelectronics 碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 21.5 mOhm typ., 60 A

STMicroelectronics 碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A

STMicroelectronics 碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A in a HiP247-4 package
STMicroelectronics 碳化硅MOSFET Silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package

STMicroelectronics 碳化硅MOSFET Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package

STMicroelectronics 碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 8.5 mOhm typ., 239 A

Microchip Technology 绝缘栅双极晶体管(IGBT) IGBT PT MOS 7 Combi 1200 V 35 A TO-247 MAX

Microchip Technology 绝缘栅双极晶体管(IGBT) IGBT PT MOS 8 Combi 900 V 43 A TO-247

Microchip Technology 绝缘栅双极晶体管(IGBT) IGBT PT MOS 8 Combi 900 V 46 A SOT-227