Each of the SEMiQ GEN3 1200V SiC MOSFETs are tested beyond 1400V. The devices target EV-charging stations, solar inverters, renewable power generation, industrial power supplies, motor-driver applications, and induction heating.
Features
- High-speed switching
- Reliable body diode
- All parts tested to greater than 1400V
- Avalanche tested
- Driver source pin for gate driving
- Lower capacitance
- Higher system efficiency
- Easy to parallel
- Lower switching loss
- Longer creepage distance
Applications
- Solar inverters
- Switch-mode power supplies, UPS
- Induction heating and welding
- EV charging stations
- High voltage DC-DC converters
- Motor drives
TO-247-3L Package Dimensions
TO-247-4L Package Dimensions
TO-263-7L Package Dimensions
TSPAK Package Dimensions
View Results ( 4 ) Page
| 物料编号 | 数据表 | 描述 |
|---|---|---|
| GP3T020A120H | ![]() |
碳化硅MOSFET Gen3 1200V, 20mohm SiC MOSFET, TO-247-4L |
| GP3T040A120H | ![]() |
碳化硅MOSFET Gen3 1200V, 40mohm SiC MOSFET, TO-247-4L |
| GP3T080A120H | ![]() |
碳化硅MOSFET Gen3 1200V, 80mohm SiC MOSFET, TO-247-4L |
| GP3T016A120H | ![]() |
碳化硅MOSFET Gen3 1200V, 16mohm SiC MOSFET, TO-247-4L |
发布日期: 2025-07-30
| 更新日期: 2026-08-14


