SemiQ GEN3 1200V SiC MOSFET Discrete Devices

SEMiQ GEN3 1200V SiC MOSFET Discrete Devices are third-generation SiC MOSFETs and are 20% smaller than SEMiQ’s second-generation SiC MOSFETs. These devices have been developed to increase performance and cut switching losses in high-voltage applications.

Each of the SEMiQ GEN3 1200V SiC MOSFETs are tested beyond 1400V. The devices target EV-charging stations, solar inverters, renewable power generation, industrial power supplies, motor-driver applications, and induction heating.

Features

  • High-speed switching
  • Reliable body diode
  • All parts tested to greater than 1400V
  • Avalanche tested
  • Driver source pin for gate driving
  • Lower capacitance
  • Higher system efficiency
  • Easy to parallel
  • Lower switching loss
  • Longer creepage distance

Applications

  • Solar inverters
  • Switch-mode power supplies, UPS
  • Induction heating and welding
  • EV charging stations
  • High voltage DC-DC converters
  • Motor drives

TO-247-3L Package Dimensions

Mechanical Drawing - SemiQ GEN3 1200V SiC MOSFET Discrete Devices

TO-247-4L Package Dimensions

Mechanical Drawing - SemiQ GEN3 1200V SiC MOSFET Discrete Devices

TO-263-7L Package Dimensions

Mechanical Drawing - SemiQ GEN3 1200V SiC MOSFET Discrete Devices

TSPAK Package Dimensions

Mechanical Drawing - SemiQ GEN3 1200V SiC MOSFET Discrete Devices
View Results ( 4 ) Page
物料编号 数据表 描述
GP3T020A120H GP3T020A120H 数据表 碳化硅MOSFET Gen3 1200V, 20mohm SiC MOSFET, TO-247-4L
GP3T040A120H GP3T040A120H 数据表 碳化硅MOSFET Gen3 1200V, 40mohm SiC MOSFET, TO-247-4L
GP3T080A120H GP3T080A120H 数据表 碳化硅MOSFET Gen3 1200V, 80mohm SiC MOSFET, TO-247-4L
GP3T016A120H GP3T016A120H 数据表 碳化硅MOSFET Gen3 1200V, 16mohm SiC MOSFET, TO-247-4L
发布日期: 2025-07-30 | 更新日期: 2026-08-14