DMC3021LSD-13

Diodes Incorporated
621-DMC3021LSD-13
DMC3021LSD-13

制造商:

说明:
MOSFET MOSFET COMP PAIR

ECAD模型:
下载免费库加载程序,将此文件转换,以供您的ECAD工具使用。了解详情。

库存量: 3,587

库存:
3,587
可立即发货
在途量:
7,500
预期 2026/6/1
生产周期:
24
大于所示数量的预计工厂生产时间。
最少: 1   倍数: 1
单价:
¥-.--
总价:
¥-.--
预估关税:
封装:
整卷卷轴(请按2500的倍数订购)

定价 (含13% 增值税)

数量 单价
总价
剪切带/MouseReel™
¥6.8704 ¥6.87
¥4.3166 ¥43.17
¥2.8024 ¥280.24
¥2.147 ¥1,073.50
¥1.9323 ¥1,932.30
整卷卷轴(请按2500的倍数订购)
¥1.6498 ¥4,124.50
¥1.4916 ¥7,458.00
† ¥15.00 MouseReel™费将被加上并在购物车计算。所有MouseReel™订单均不可撤消和退回。

产品属性 属性值 选择属性
Diodes Incorporated
产品种类: MOSFET
RoHS:  
Si
SMD/SMT
SOIC-8
N-Channel, P-Channel
2 Channel
30 V
8.5 A, 7 A
21 mOhms, 39 mOhms
- 20 V, 20 V
1 V
7.8 nC, 21.1 nC
- 55 C
+ 150 C
2.5 W
Enhancement
Reel
Cut Tape
MouseReel
商标: Diodes Incorporated
配置: Dual
下降时间: 8.55 ns, 22.2 ns
产品类型: MOSFETs
上升时间: 4.5 ns, 6.5 ns
系列: DMC3021
工厂包装数量: 2500
子类别: Transistors
晶体管类型: 1 N-Channel, 1 P-Channel
典型关闭延迟时间: 26.3 ns, 50.1 ns
典型接通延迟时间: 5 ns, 10.1 ns
单位重量: 74 mg
找到的产品:
要显示类似产品,至少选中一个复选框
要显示该类别下的类似产品,请至少选中上方的一个复选框。
已选择的属性: 0

CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

Power MOSFETs

Diodes Incorporated offers a broad range of Power MOSFETs, enabling designers to select a device optimized for their end application, thus enabling next generation consumer, computer and communication product designs. The Diodes portfolio is ideally suited to meeting the circuit requirements of DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive applications.

DMx Enhancement Mode MOSFETs

Diodes Incorporated DMx series enhancement mode MOSFETs feature low on-resistance and fast switching, making them ideal for high efficiency power management applications. Diodes Incorporated DMx enhancement mode MOSFETs are also optimized for motor control, backlighting, and DC-DC converter applications. Diodes Incorporated DMx series includes complementary dual, complementary pair, P-channel, and N-channel enhancement mode MOSFETs.