UF3C SiC FETs

onsemi UF3C High-Performance SiC FETs are cascode Silicon Carbide (SiC) products that co-package high-performance G3 SiC JFETs with a cascode-optimized Si MOSFET to produce a standard gate drive SiC device. This series exhibits ultra-low gate charge and is excellent for switching inductive loads and applications requiring a standard gate drive. The onsemi UF3C SiC FETs are available in 650V, 1200V, and 1700V versions and are offered in D2PAK-3, D2PAK-7, D2PAK-7L, TO-247-3L, TO-247-4L, and TO-220-3L packages.

结果: 23
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 安装风格 封装 / 箱体 通道数量 Vds-漏源极击穿电压 Id-连续漏极电流 Rds On-漏源导通电阻 Vgs - 栅极-源极电压 Vgs th-栅源极阈值电压 Qg-栅极电荷 最小工作温度 最大工作温度 Pd-功率耗散 通道模式 资格 商标名
onsemi 碳化硅MOSFET 1700V/400MOSICFETG3TO263-7 800库存量
800预期 2026/12/21
剪切带
¥101.0898
¥71.4725
¥53.0761
¥50.2059
卷轴
¥50.2059
最低: 1
倍数: 1
最大: 800
: 800
SMD/SMT D2PAK-7 1 Channel 1.7 kV 7.6 A 410 mOhms - 25 V, + 25 V 6 V 23.1 nC - 55 C + 175 C 100 W Enhancement SiC FET
onsemi 碳化硅MOSFET 650V/40MOSICFETG3TO247-4 3,278库存量
¥171.9747
¥102.9204
最低: 1
倍数: 1
Through Hole TO-247-4 1 Channel 650 V 54 A 52 mOhms - 25 V, + 25 V 4 V 43 nC - 55 C + 175 C 326 W Enhancement AEC-Q101 SiC FET
onsemi 碳化硅MOSFET 650V/80MOSICFETG3TO247-4 583库存量
¥110.3897
¥62.8845
¥58.2854
¥56.1045
最低: 1
倍数: 1
Through Hole TO-247-4 1 Channel 650 V 31 A 100 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 190 W Enhancement AEC-Q101 SiC FET
onsemi 碳化硅MOSFET 1200V/80MOSICFETG3TO247-3 1,142库存量
¥183.7719
¥112.1299
最低: 1
倍数: 1
Through Hole TO-247-3 1 Channel 1.2 kV 33 A 100 mOhms - 25 V, + 25 V 6 V 51 nC - 55 C + 175 C 254.2 W Enhancement AEC-Q101 SiC FET
onsemi 碳化硅MOSFET 1200V/150MOSICFETG3TO263-7 355库存量
剪切带
¥109.1693
¥63.6642
¥58.6244
¥55.4943
卷轴
¥55.4943
最低: 1
倍数: 1
: 800
SMD/SMT D2PAK-7 1 Channel 1.2 kV 17 A 150 mOhms - 25 V, + 25 V 4.4 V 25.7 nC - 55 C + 175 C 136 W Enhancement SiC FET
onsemi 碳化硅MOSFET 1200V/40MOSICFETG3TO24 227库存量
¥255.1653
¥190.4728
¥170.6639
¥170.1441
最低: 1
倍数: 1
Through Hole TO-247-3 1 Channel 1.2 kV 65 A 45 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 429 W Enhancement SiC FET
onsemi 碳化硅MOSFET 650V/80MOSICFETG3TO220-3 472库存量
¥101.7904
¥60.0143
¥55.4152
¥51.6749
最低: 1
倍数: 1
Through Hole TO-220-3 1 Channel 650 V 31 A 100 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 190 W Enhancement AEC-Q101 SiC FET
onsemi 碳化硅MOSFET 650V/30MOSICFETG3TO220-3 902库存量
¥222.8586
¥143.3066
最低: 1
倍数: 1
Through Hole TO-220-3 1 Channel 650 V 85 A 35 mOhms - 25 V, + 25 V 5 V 51 nC - 55 C + 175 C 441 W Enhancement AEC-Q101 SiC FET
onsemi 碳化硅MOSFET 650V/40MOSICFETG3TO247-3 1,166库存量
¥169.4435
¥101.0107
最低: 1
倍数: 1
Through Hole TO-247-3 1 Channel 650 V 54 A 42 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 326 W Enhancement AEC-Q101 SiC FET
onsemi 碳化硅MOSFET 1200V/40MOSICFETG3TO247-4 612库存量
¥256.2953
¥170.1441
最低: 1
倍数: 1
Through Hole TO-247-4 1 Channel 1.2 kV 65 A 45 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 429 W Enhancement AEC-Q101 SiC FET
onsemi 碳化硅MOSFET 650V/80MOSICFETG3TO247-3 639库存量
¥108.9094
¥61.2347
¥56.7147
¥54.3643
最低: 1
倍数: 1
Through Hole TO-247-3 1 Channel 650 V 31 A 100 mOhms - 12 V, + 12 V 6 V 51 nC - 55 C + 175 C 190 W Enhancement AEC-Q101 SiC FET
onsemi 碳化硅MOSFET 650V/80MOSICFETG3TO263-3 1,252库存量
剪切带
¥99.8807
¥58.9747
¥53.5846
¥50.7257
卷轴
¥50.7257
最低: 1
倍数: 1
: 800
SMD/SMT D2PAK-3 (TO-263-3) 1 Channel 650 V 25 A 100 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 115 W Enhancement AEC-Q101 SiC FET
onsemi 碳化硅MOSFET 650V/80MOSICFETG3TO263-7 199库存量
剪切带
¥114.6385
¥68.0147
¥63.4043
¥60.0143
卷轴
¥60.0143
最低: 1
倍数: 1
: 800
SMD/SMT D2PAK-7 1 Channel 650 V 27 A 85 mOhms - 25 V, + 25 V 6 V 23 nC - 55 C + 175 C 136.4 W Enhancement SiC FET
onsemi 碳化硅MOSFET 1200V/400MOSICFETG3TO263-7 648库存量
800预期 2026/11/23
剪切带
¥80.343
¥44.0361
¥40.4766
¥38.2166
卷轴
¥38.2166
最低: 1
倍数: 1
最大: 800
: 800
SMD/SMT D2PAK-7 1 Channel 1.2 kV 5.9 A 410 mOhms - 25 V, + 25 V 6 V 22.5 nC - 55 C + 175 C 100 W Enhancement SiC FET
onsemi 碳化硅MOSFET 1200V/80MOSICFETG3TO263-7 595库存量
剪切带
¥167.014
¥104.7397
¥99.1801
卷轴
¥99.1801
最低: 1
倍数: 1
: 800
SMD/SMT D2PAK-7 1 Channel 1.2 kV 28.8 A 85 mOhms - 25 V, + 25 V 6 V 23 nC - 55 C + 175 C 190 W Enhancement SiC FET
onsemi 碳化硅MOSFET 1200V/80MOSICFETG3TO247-4 636库存量
¥183.9527
¥112.209
最低: 1
倍数: 1
最大: 600
Through Hole TO-247-4 1 Channel 1.2 kV 33 A 100 mOhms - 25 V, + 25 V 6 V 51 nC - 55 C + 175 C 254.2 W Enhancement AEC-Q101 SiC FET
onsemi 碳化硅MOSFET 1700V/400MOSICFETG3TO247-3 494库存量
600预期 2026/11/16
¥102.83
¥58.0255
¥53.5846
¥50.9065
最低: 1
倍数: 1
最大: 600
Through Hole TO-247-3 1 Channel 1.7 kV 7.6 A 1.07 Ohms - 25 V, + 25 V 6 V 27.5 nC - 55 C + 175 C 100 W Enhancement AEC-Q101 SiC FET
onsemi 碳化硅MOSFET 650V/30MOSICFETG3TO247-3 92库存量
¥234.588
¥144.1767
最低: 1
倍数: 1
Through Hole TO-247-3 1 Channel 650 V 85 A 35 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 441 W Enhancement AEC-Q101 SiC FET
onsemi 碳化硅MOSFET 1200V/150MOSICFETG3TO247-4 63库存量
¥121.249
¥67.7548
¥65.5739
最低: 1
倍数: 1
Through Hole TO-247-4 1 Channel 1.2 kV 18.4 A 330 mOhms - 25 V, + 25 V 3.5 V 25.7 nC - 55 C + 175 C 166.7 W Enhancement AEC-Q101 SiC FET
onsemi 碳化硅MOSFET 650V/30MOSICFETG3TO247-4
1,200预期 2027/2/19
¥235.1982
¥188.3032
¥162.8443
最低: 1
倍数: 1
Through Hole TO-247-4 1 Channel 650 V 85 A 35 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 441 W Enhancement AEC-Q101 SiC FET
onsemi 碳化硅MOSFET 650V/40MOSICFETG3TO220-3
1,000在途量
¥177.184
¥106.1296
¥101.2706
最低: 1
倍数: 1
Through Hole TO-220-3 1 Channel 650 V 54 A 52 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 326 W Enhancement AEC-Q101 SiC FET
onsemi 碳化硅MOSFET 1200V/400MOSICFETG3TO247-3
300预期 2027/1/15
¥100.8412
¥68.7831
¥57.3249
¥51.0647
最低: 1
倍数: 1
Through Hole TO-247-3 1 Channel 1.2 kV 7.6 A 1.07 Ohms - 25 V, + 25 V 6 V 27.5 nC - 55 C + 175 C 100 W Enhancement AEC-Q101 SiC FET
onsemi 碳化硅MOSFET 650V/30MOSICFETG3TO263-3 无库存交货期 52 周
剪切带
¥219.4799
¥148.4368
卷轴
¥148.4368
最低: 1
倍数: 1
: 800
SMD/SMT D2PAK-3 (TO-263-3) 1 Channel 650 V 65 A 27 mOhms - 25 V, + 25 V 4 V 51 nC - 25 C + 175 C 242 W Enhancement AEC-Q101 SiC FET