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碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package
- SCT020W120G3-4AG
- STMicroelectronics
-
1:
¥157.9853
-
513库存量
-
新产品
|
Mouser 零件编号
511-SCT020W120G3-4AG
新产品
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package
|
|
513库存量
|
|
|
¥157.9853
|
|
|
¥130.3568
|
|
|
¥129.2833
|
|
|
¥127.0572
|
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|
查看
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报价
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|
最低： 1
倍数： 1
|
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Through Hole
|
Hip247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
100 A
|
28 mOhms
|
- 10 V, + 22 V
|
3 V
|
121 nC
|
- 55 C
|
+ 200 C
|
541 W
|
Enhancement
|
AEC-Q101
|
|
|
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碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
- SCT070W120G3-4AG
- STMicroelectronics
-
1:
¥103.9713
-
473库存量
-
1,200预期 2026/4/20
|
Mouser 零件编号
511-SCT070W120G3-4AG
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
|
|
473库存量
1,200预期 2026/4/20
|
|
|
¥103.9713
|
|
|
¥72.9528
|
|
|
¥66.0937
|
|
|
¥62.2856
|
|
|
¥51.6975
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
HiP-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
30 A
|
87 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
41 nC
|
- 55 C
|
+ 200 C
|
236 W
|
Enhancement
|
AEC-Q101
|
|
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碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an H2PAK-7 package
- SCT070H120G3AG
- STMicroelectronics
-
1:
¥100.6604
-
85库存量
|
Mouser 零件编号
511-SCT070H120G3AG
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an H2PAK-7 package
|
|
85库存量
|
|
|
¥100.6604
|
|
|
¥70.4781
|
|
|
¥60.6358
|
|
|
¥60.5454
|
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¥49.4601
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|
最低： 1
倍数： 1
|
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SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
30 A
|
87 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
37 nC
|
- 55 C
|
+ 175 C
|
223 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HU3PAK package
- SCT070HU120G3AG
- STMicroelectronics
-
1:
¥112.9096
-
73库存量
-
1,200预期 2026/2/27
|
Mouser 零件编号
511-SCT070HU120G3AG
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HU3PAK package
|
|
73库存量
1,200预期 2026/2/27
|
|
|
¥112.9096
|
|
|
¥79.0774
|
|
|
¥69.9809
|
|
|
¥57.0763
|
|
最低： 1
倍数： 1
|
|
|
SMD/SMT
|
HU3PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
30 A
|
87 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
37 nC
|
- 55 C
|
+ 175 C
|
223 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
- SCT070W120G3-4
- STMicroelectronics
-
1:
¥90.4113
-
无库存交货期 17 周
-
新产品
|
Mouser 零件编号
511-SCT070W120G3-4
新产品
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
|
|
无库存交货期 17 周
|
|
|
¥90.4113
|
|
|
¥54.014
|
|
|
¥45.991
|
|
|
¥42.8496
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
HiP247-4
|
N-Channel
|
|
1.2 kV
|
30 A
|
87 mOhms
|
- 10 V, + 22 V
|
3 V
|
41 nC
|
- 55 C
|
+ 200 C
|
236 W
|
Enhancement
|
|
|
