CoolMOS™超级结MOSFET

英飞凌CoolMOS™ 功率晶体管具有快速开关SJ MOSFET的所有优势。与CoolMOS 7代结合使用,英飞凌继续设定价格、性能和质量基准。

结果: 190
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 技术 安装风格 封装 / 箱体 晶体管极性 通道数量 Vds-漏源极击穿电压 Id-连续漏极电流 Rds On-漏源导通电阻 Vgs - 栅极-源极电压 Vgs th-栅源极阈值电压 Qg-栅极电荷 最小工作温度 最大工作温度 Pd-功率耗散 通道模式 资格 商标名 封装
Infineon Technologies MOSFET LOW POWER_NEW 9,180库存量
最低: 1
倍数: 1
卷轴: 2,500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 800 V 2.5 A 2 Ohms - 20 V, 20 V 2.5 V 7.5 nC - 55 C + 150 C 22 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies MOSFET LOW POWER_NEW 4,161库存量
最低: 1
倍数: 1
卷轴: 2,500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 800 V 11 A 450 mOhms - 30 V, 30 V 3 V 24 nC - 50 C + 150 C 73 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET LOW POWER_NEW 4,790库存量
最低: 1
倍数: 1
卷轴: 2,500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 950 V 9 A 750 mOhms - 20 V, 20 V 2.5 V 23 nC - 55 C + 150 C 73 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies MOSFET HIGH POWER_NEW 1,029库存量
3,000预期 2026/6/11
最低: 1
倍数: 1
卷轴: 3,000

Si SMD/SMT VSON-4 N-Channel 1 Channel 600 V 40 A 60 mOhms - 20 V, 20 V 3.5 V 79 nC - 40 C + 150 C 219 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET HIGH POWER_NEW 1,784库存量
最低: 1
倍数: 1
卷轴: 3,000

Si SMD/SMT VSON-4 N-Channel 1 Channel 600 V 33 A 66 mOhms - 20 V, 20 V 3.5 V 67 nC - 40 C + 150 C 189 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies MOSFET HIGH POWER_NEW 7,565库存量
最低: 1
倍数: 1
卷轴: 3,000

Si SMD/SMT VSON-4 N-Channel 1 Channel 600 V 27 A 104 mOhms - 20 V, 20 V 3 V 36 nC - 40 C + 150 C 111 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET HIGH POWER_NEW 2,450库存量
最低: 1
倍数: 1
卷轴: 3,000

Si SMD/SMT VSON-4 N-Channel 1 Channel 600 V 19 A 149 mOhms - 20 V, 20 V 3 V 25 nC - 40 C + 150 C 81 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET CONSUMER 3,786库存量
最低: 1
倍数: 1
卷轴: 3,000

Si SMD/SMT SOT-223-3 N-Channel 1 Channel 650 V 10 A 360 mOhms - 20 V, 20 V 4 V 12.7 nC - 40 C + 150 C 7 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET LOW POWER_NEW 5,772库存量
最低: 1
倍数: 1
卷轴: 3,000

Si SMD/SMT SOT-223-3 N-Channel 1 Channel 950 V 6 A 1.2 Ohms - 20 V, 20 V 2.5 V 15 nC - 55 C + 150 C 7 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET LOW POWER_NEW 29,400库存量
最低: 1
倍数: 1
卷轴: 3,000

Si SMD/SMT SOT-223-3 N-Channel 1 Channel 950 V 2 A 3.7 Ohms - 20 V, 20 V 2.5 V 6 nC - 55 C + 150 C 6 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET HIGH POWER_NEW 1,087库存量
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 31 A 57 mOhms - 20 V, 20 V 3.5 V 67 nC - 55 C + 150 C 156 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW 947库存量
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 31 A 77 mOhms - 20 V, 20 V 3 V 45 nC - 55 C + 150 C 117 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW 5,764库存量
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 18 A 145 mOhms - 20 V, 20 V 3 V 25 nC - 55 C + 150 C 72 W Enhancement CoolMOS Tube

Infineon Technologies MOSFET HIGH POWER_NEW 450库存量
最低: 1
倍数: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 101 A 18 mOhms - 20 V, 20 V 3.5 V 251 nC - 55 C + 150 C 416 W Enhancement Tube

Infineon Technologies MOSFET HIGH POWER_NEW 806库存量
最低: 1
倍数: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 63 A 26 mOhms - 20 V, 20 V 3.5 V 141 nC - 55 C + 150 C 278 W Enhancement CoolMOS Tube

Infineon Technologies MOSFET HIGH POWER_NEW 727库存量
最低: 1
倍数: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 50 A 40 mOhms - 20 V, 20 V 3.5 V 109 nC - 55 C + 150 C 227 W Enhancement Tube

Infineon Technologies MOSFET HIGH POWER_NEW 732库存量
最低: 1
倍数: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 25 A 90 mOhms - 20 V, 20 V 3.5 V 51 nC - 55 C + 150 C 125 W Enhancement Tube

Infineon Technologies MOSFET HIGH POWER_NEW 1,067库存量
最低: 1
倍数: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 31 A 77 mOhms - 20 V, 20 V 3 V 45 nC - 55 C + 150 C 117 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET CONSUMER 710库存量
最低: 1
倍数: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 600 V 16 A 386 mOhms - 20 V, 20 V 4 V 23 nC - 40 C + 150 C 25 W Enhancement Tube
Infineon Technologies MOSFET LOW POWER_NEW 2,204库存量
最低: 1
倍数: 1
卷轴: 3,000

Si SMD/SMT SOT-223-3 N-Channel 1 Channel 950 V 4 A 2 Ohms - 20 V, 20 V 2.5 V 10 nC - 55 C + 150 C 7 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies MOSFET LOW POWER_NEW 1,334库存量
最低: 1
倍数: 1

Si Through Hole TO-251-3 N-Channel 1 Channel 800 V 4 A 1.4 Ohms - 30 V, 30 V 3 V 10 nC - 50 C + 150 C 32 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET LOW POWER_NEW 2,153库存量
最低: 1
倍数: 1

Si Through Hole TO-251-3 N-Channel 1 Channel 950 V 2 A 3.7 Ohms - 20 V, 20 V 2.5 V 6 nC - 55 C + 150 C 22 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW 370库存量
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 23.8 A 374 mOhms - 20 V, 20 V 4 V 44 nC - 55 C + 150 C 26 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET LOW POWER_NEW 741库存量
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 6 A 490 mOhms - 20 V, 20 V 3 V 9 nC - 55 C + 150 C 21 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET LOW POWER_NEW 500库存量
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 7 A 640 mOhms - 20 V, 20 V 2.5 V 17 nC - 55 C + 150 C 27 W Enhancement CoolMOS Tube