ART1K6FH LDMOS RF Power Transistors

Ampleon ART1K6FH LDMOS RF Power Transistors are 1600W LDMOS RF power transistors based on Advanced Rugged Technology (ART). The Ampleon ART1K6FH transistors cover various ISM, broadcast, and communications applications. The unmatched transistors offer a 1MHz to 425MHz frequency range. Designed for broadband operation, the Ampleon ART1K6FH transistors deliver high efficiency and excellent thermal stability/ruggedness with no device degradation.

结果: 3
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 晶体管极性 技术 Vds-漏源极击穿电压 Rds On-漏源导通电阻 工作频率 增益 输出功率 最大工作温度 安装风格 封装 / 箱体 封装
Ampleon 射频金属氧化物半导体场效应(RF MOSFET)晶体管 ART1K6FH/SOT539/TRAY 147库存量
最低: 1
倍数: 1

Dual N-Channel LDMOS 55 V 84 mOhms 1 MHz to 425 MHz 28 dB 1.6 kW + 225 C Screw Mount SOT539AN-5 Tray
Ampleon 射频金属氧化物半导体场效应(RF MOSFET)晶体管 ART1K6FHG/SOT1248/REEL

Dual N-Channel LDMOS 55 V 84 mOhms 1 MHz to 425 MHz 28 dB 1.6 kW + 225 C SMD/SMT SOT1248C-5 Reel
Ampleon 射频金属氧化物半导体场效应(RF MOSFET)晶体管 ART1K6FHS/SOT539/TRAY

Dual N-Channel LDMOS 55 V 84 mOhms 1 MHz to 425 MHz 28 dB 1.6 kW + 225 C SMD/SMT SOT539BN-5 Tray