CoolMOS™ 7超级结MOSFET

Infineon Technologies CoolMOS™ 7超级结MOSFET为能源效率、功率密度和简单易用设立了新标准。CoolMOS 7技术针对特定应用进行优化,采用创新的封装,集成了各种技术。CoolMOS 7 MOSFET非常适合用于让电动汽车充电站更小巧、输出更高、充电更快的应用。由于CoolMOS 7的出现,新一代适配器和充电器更小巧、更轻盈、更高效。通过CoolMOS 7,工程师可以让可再生能源系统更经济、更高效。

结果: 195
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 技术 安装风格 封装 / 箱体 晶体管极性 通道数量 Vds-漏源极击穿电压 Id-连续漏极电流 Rds On-漏源导通电阻 Vgs - 栅极-源极电压 Vgs th-栅源极阈值电压 Qg-栅极电荷 最小工作温度 最大工作温度 Pd-功率耗散 通道模式 商标名 封装
Infineon Technologies MOSFET LOW POWER_NEW 5,912库存量
最低: 1
倍数: 1
卷轴: 2,500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 800 V 6 A 770 mOhms - 20 V, 20 V 2.5 V 15 nC - 55 C + 150 C 45 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies MOSFET HIGH POWER_NEW 917库存量
最低: 1
倍数: 1
卷轴: 3,000

Si SMD/SMT VSON-4 N-Channel 1 Channel 600 V 39 A 73 mOhms - 20 V, 20 V 3 V 51 nC - 40 C + 150 C 154 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies MOSFET N-Ch 650V 10A ThinPAK-4 CoolMOS C7 6,349库存量
最低: 1
倍数: 1
卷轴: 3,000

Si SMD/SMT VSON-4 N-Channel 1 Channel 650 V 10 A 230 mOhms - 20 V, 20 V 4 V 20 nC - 40 C + 150 C 67 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET HIGH POWER_NEW 828库存量
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 25 A 90 mOhms - 20 V, 20 V 3.5 V 51 nC - 55 C + 150 C 125 W Enhancement Tube
Infineon Technologies MOSFET HIGH POWER_NEW 1,354库存量
最低: 1
倍数: 1
卷轴: 1,700

Si SMD/SMT HDSOP-10 N-Channel 1 Channel 600 V 29 A 80 mOhms - 20 V, 20 V 3 V 42 nC - 55 C + 150 C 174 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET HIGH POWER_NEW 490库存量
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 33 A 58 mOhms - 20 V, 20 V 3 V 64 nC - 55 C + 150 C 171 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW 2,005库存量
最低: 1
倍数: 1
卷轴: 2,000

Si SMD/SMT HSOF-8 N-Channel 1 Channel 650 V 29 A 80 mOhms - 30 V, 30 V 3 V 42 nC - 55 C + 150 C 167 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies MOSFET LOW POWER_NEW 5,032库存量
最低: 1
倍数: 1
卷轴: 3,000

Si SMD/SMT VSON-4 N-Channel 1 Channel 600 V 10 A 310 mOhms - 20 V, 20 V 3 V 13 nC - 40 C + 150 C 46 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET HIGH POWER BEST IN CLASS 494库存量
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 12 A 84 mOhms - 20 V, 20 V 3 V 45 nC - 55 C + 150 C 34 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET LOW POWER_NEW 6,472库存量
最低: 1
倍数: 1
卷轴: 3,000

Si SMD/SMT SOT-223-3 N-Channel 1 Channel 800 V 7 A 640 mOhms - 30 V, 30 V 3.5 V 17 nC - 55 C + 150 C 7.2 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET HIGH POWER_NEW 778库存量
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 18 A 125 mOhms - 20 V, 20 V 3.5 V 36 nC - 55 C + 150 C 92 W Enhancement Tube
Infineon Technologies MOSFET HIGH POWER_NEW 298库存量
最低: 1
倍数: 1

Si Through Hole TO-247-4 N-Channel 1 Channel 600 V 31 A 77 mOhms - 20 V, 20 V 3 V 45 nC - 55 C + 150 C 117 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER BEST IN CLASS 244库存量
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 15 A 58 mOhms - 20 V, 20 V 3 V 64 nC - 55 C + 150 C 34 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW 1,244库存量
最低: 1
倍数: 1
卷轴: 2,500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 650 V 13 A 190 mOhms - 20 V, 20 V 3 V 23 nC - 55 C + 150 C 72 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies MOSFET LOW POWER_NEW 2,520库存量
最低: 1
倍数: 1
卷轴: 2,500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 6 A 490 mOhms - 20 V, 20 V 3 V 9 nC - 55 C + 150 C 30 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies MOSFET 800V CoolMOS P7PowerDevice 4,029库存量
最低: 1
倍数: 1
卷轴: 2,500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 800 V 1.9 A 2.8 Ohms - 20 V, 20 V 2.5 V 5.8 nC - 55 C + 150 C 18 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET HIGH POWER_NEW 1,199库存量
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 14 A 144 mOhms - 20 V, 20 V 3.5 V 28 nC - 55 C + 150 C 75 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET LOW POWER_NEW 3,071库存量
最低: 1
倍数: 1
卷轴: 2,500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 800 V 4 A 1.4 Ohms - 30 V, 30 V 3 V 10 nC - 55 C + 150 C 32 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies MOSFET HIGH POWER BEST IN CLASS 2,875库存量
最低: 1
倍数: 1
卷轴: 3,000

Si SMD/SMT VSON-4 N-Channel 1 Channel 650 V 12 A 173 mOhms - 20 V, 20 V 3 V 23 nC - 40 C + 150 C 75 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET N-Ch 700V 75A TO247-4 93库存量
最低: 1
倍数: 1

Si Through Hole TO-247-4 N-Channel 1 Channel 650 V 75 A 17 mOhms - 20 V, 20 V 3 V 215 nC - 55 C + 150 C 446 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW 224库存量
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 16 A 115 mOhms - 20 V, 20 V 3.5 V 68 nC - 55 C + 150 C 34 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET 800V CoolMOS P7PowerTransistor 5,072库存量
最低: 1
倍数: 1
卷轴: 3,000

Si SMD/SMT SOT-223-3 N-Channel 1 Channel 800 V 1.9 A 2.8 Ohms - 30 V, 30 V 3.5 V 5.8 nC - 55 C + 150 C 6.1 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET HIGH POWER_NEW 221库存量
最低: 1
倍数: 1

Si Through Hole TO-247-4 N-Channel 1 Channel 650 V 33 A 58 mOhms - 20 V, 20 V 3 V 64 nC - 55 C + 150 C 171 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER NEW 2,122库存量
最低: 1
倍数: 1
卷轴: 2,000

Si SMD/SMT HSOF-8 N-Channel 1 Channel 600 V 75 A 28 mOhms - 20 V, 20 V 3 V 123 nC - 55 C + 150 C 391 W Enhancement Reel, Cut Tape, MouseReel

Infineon Technologies MOSFET HIGH POWER_NEW 1,702库存量
最低: 1
倍数: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 109 A 17 mOhms - 20 V, 20 V 3 V 240 nC - 55 C + 150 C 446 W Enhancement CoolMOS Tube