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射频金属氧化物半导体场效应(RF MOSFET)晶体管 400 W, 50 V, 0.4 to 1 GHz RF power LDMOS transistor
- RF5L08350CB4
- STMicroelectronics
-
1:
¥1,426.7719
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110库存量
-
NRND
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Mouser 零件编号
511-RF5L08350CB4
NRND
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 400 W, 50 V, 0.4 to 1 GHz RF power LDMOS transistor
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|
110库存量
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¥1,426.7719
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¥1,211.9589
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¥1,067.6127
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查看
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报价
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最低： 1
倍数： 1
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N-Channel
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Si
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2.5 A
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110 V
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1 Ohms
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1 GHz
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19 dB
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400 W
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+ 200 C
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SMD/SMT
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B4E-5
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Reel, Cut Tape, MouseReel
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射频金属氧化物半导体场效应(RF MOSFET)晶体管 180 W, 28 V, 1.3 to 1.6 GHz RF power LDMOS transistor
- RF2L16180CB4
- STMicroelectronics
-
1:
¥1,426.7719
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20库存量
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NRND
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Mouser 零件编号
511-RF2L16180CB4
NRND
|
STMicroelectronics
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射频金属氧化物半导体场效应(RF MOSFET)晶体管 180 W, 28 V, 1.3 to 1.6 GHz RF power LDMOS transistor
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20库存量
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¥1,426.7719
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¥1,158.1935
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¥1,086.8905
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查看
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报价
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最低： 1
倍数： 1
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N-Channel
|
Si
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2.5 A
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65 V
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1 Ohms
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1.6 GHz
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14 dB
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180 W
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+ 200 C
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SMD/SMT
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B4E-5
|
Reel, Cut Tape, MouseReel
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射频金属氧化物半导体场效应(RF MOSFET)晶体管 250 W 28/32 V RF power LDMOS transistor from HF to 1 GHz
- RF3L05250CB4
- STMicroelectronics
-
100:
¥1,376.8033
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无库存
-
NRND
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Mouser 零件编号
511-RF3L05250CB4
NRND
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STMicroelectronics
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射频金属氧化物半导体场效应(RF MOSFET)晶体管 250 W 28/32 V RF power LDMOS transistor from HF to 1 GHz
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无库存
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¥1,376.8033
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查看
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|
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报价
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最低： 100
倍数： 100
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N-Channel
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Si
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2.5 A
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90 V
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1 Ohms
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1 MHz
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18 dB
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250 W
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+ 200 C
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SMD/SMT
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LBB-5
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Reel
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射频金属氧化物半导体场效应(RF MOSFET)晶体管 75 W, 28 V, 3.1 to 3.6 GHz RF power LDMOS transistor
- RF2L36075CF2
- STMicroelectronics
-
1:
¥1,259.1816
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无库存
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NRND
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Mouser 零件编号
511-RF2L36075CF2
NRND
|
STMicroelectronics
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射频金属氧化物半导体场效应(RF MOSFET)晶体管 75 W, 28 V, 3.1 to 3.6 GHz RF power LDMOS transistor
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无库存
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¥1,259.1816
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¥1,204.5122
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¥1,159.6738
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查看
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报价
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最低： 1
倍数： 1
|
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N-Channel
|
Si
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2.5 A
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60 V
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1 Ohms
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3.5 GHz
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12.5 dB
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75 W
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+ 200 C
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SMD/SMT
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B2-3
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Reel, Cut Tape, MouseReel
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