结果: 8
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 安装风格 封装 / 箱体 通道数量 Vds-漏源极击穿电压 Id-连续漏极电流 Rds On-漏源导通电阻 Vgs - 栅极-源极电压 Vgs th-栅源极阈值电压 Qg-栅极电荷 最小工作温度 最大工作温度 Pd-功率耗散 通道模式 商标名
Infineon Technologies 碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 12 mohm G2 134库存量
1,920在途量
¥236.8141
¥189.5801
¥163.9404
¥155.1716
最低: 1
倍数: 1
Through Hole TO-247-4 1 Channel 1.2 kV 129 A 12 mOhms - 10 V, + 25 V 5.1 V 124 nC - 55 C + 175 C Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 17 mohm G2 553库存量
1,200在途量
¥177.4213
¥132.5151
¥114.5594
¥108.4461
最低: 1
倍数: 1
Through Hole TO-247-4 1 Channel 1.2 kV 97 A 17 mOhms - 10 V, + 25 V 5.1 V 89 nC - 55 C + 175 C 382 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 22 mohm G2 1,335库存量
¥157.409
¥119.9382
¥99.9259
¥88.9988
最低: 1
倍数: 1
Through Hole TO-247-4 1 Channel 1.2 kV 80 A 22 mOhms - 10 V, + 25 V 5.1 V 71 nC - 55 C + 175 C 329 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 26 mohm G2 326库存量
1,440在途量
¥130.854
¥99.6773
¥83.0437
¥73.9472
¥69.156
最低: 1
倍数: 1
Through Hole TO-247-4 1 Channel 1.2 kV 69 A 25 mOhms - 10 V, + 25 V 5.1 V 124 nC - 55 C + 175 C 289 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 34 mohm G2 823库存量
¥105.881
¥58.647
¥55.0875
最低: 1
倍数: 1
Through Hole TO-247-4 1 Channel 1.2 kV 55 A - 10 V, + 25 V 5.1 V 45 nC - 55 C + 175 C 244 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 40 mohm G2 1,752库存量
240预期 2026/11/12
¥102.8978
¥74.4444
¥62.037
¥55.1666
¥51.6184
最低: 1
倍数: 1
Through Hole TO-247-4 1 Channel 1.2 kV 48 A 40 mOhms - 10 V, + 25 V 5.1 V 39 nC - 55 C + 175 C 218 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 53 mohm G2 567库存量
¥85.4506
¥46.4882
¥42.9287
¥42.8496
¥41.7761
最低: 1
倍数: 1
Through Hole TO-247-4 1 Channel 1.2 kV 38 A 53 mOhms - 10 V, + 25 V 5.1 V 30 nC - 55 C + 175 C 182 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 78 mohm G2
1,680在途量
¥76.1846
¥52.0252
¥42.9287
¥38.2166
¥35.7306
最低: 1
倍数: 1
Through Hole TO-247-4 1 Channel 1.2 kV 28 A 78 mOhms - 10 V, + 25 V 5.1 V 21 nC - 55 C + 175 C 143 W Enhancement CoolSiC