|
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 22 mohm G2
- IMZC120R022M2HXKSA1
- Infineon Technologies
-
1:
¥142.606
-
1,665库存量
-
新产品
|
Mouser 零件编号
726-IMZC120R022M2HXK
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 22 mohm G2
|
|
1,665库存量
|
|
最低： 1
倍数： 1
最大： 50
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
80 A
|
22 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
71 nC
|
- 55 C
|
+ 175 C
|
329 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 12 mohm G2
- IMZC120R012M2HXKSA1
- Infineon Technologies
-
1:
¥220.2709
-
242库存量
-
480预期 2026/6/18
-
新产品
|
Mouser 零件编号
726-IMZC120R012M2HXK
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 12 mohm G2
|
|
242库存量
480预期 2026/6/18
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
129 A
|
12 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
124 nC
|
- 55 C
|
+ 175 C
|
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 17 mohm G2
- IMZC120R017M2HXKSA1
- Infineon Technologies
-
1:
¥177.2631
-
396库存量
-
新产品
|
Mouser 零件编号
726-IMZC120R017M2HXK
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 17 mohm G2
|
|
396库存量
|
|
最低： 1
倍数： 1
最大： 20
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
97 A
|
17 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
89 nC
|
- 55 C
|
+ 175 C
|
382 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 26 mohm G2
- IMZC120R026M2HXKSA1
- Infineon Technologies
-
1:
¥129.5319
-
483库存量
-
新产品
|
Mouser 零件编号
726-IMZC120R026M2HXK
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 26 mohm G2
|
|
483库存量
|
|
最低： 1
倍数： 1
最大： 20
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
69 A
|
25 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
124 nC
|
- 55 C
|
+ 175 C
|
289 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 34 mohm G2
- IMZC120R034M2HXKSA1
- Infineon Technologies
-
1:
¥103.7227
-
826库存量
-
240预期 2026/6/11
-
新产品
|
Mouser 零件编号
726-IMZC120R034M2HXK
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 34 mohm G2
|
|
826库存量
240预期 2026/6/11
|
|
最低： 1
倍数： 1
最大： 70
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
55 A
|
|
- 10 V, + 25 V
|
5.1 V
|
45 nC
|
- 55 C
|
+ 175 C
|
244 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 53 mohm G2
- IMZC120R053M2HXKSA1
- Infineon Technologies
-
1:
¥84.0381
-
804库存量
-
新产品
|
Mouser 零件编号
726-IMZC120R053M2HXK
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 53 mohm G2
|
|
804库存量
|
|
|
¥84.0381
|
|
|
¥49.5505
|
|
|
¥41.9343
|
|
|
¥41.8552
|
|
|
¥40.6913
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
38 A
|
53 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
30 nC
|
- 55 C
|
+ 175 C
|
182 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 40 mohm G2
- IMZC120R040M2HXKSA1
- Infineon Technologies
-
1:
¥98.762
-
1,992在途量
-
新产品
|
Mouser 零件编号
726-IMZC120R040M2HXK
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 40 mohm G2
|
|
1,992在途量
在途量:
312 预期 2026/7/23
480 预期 2026/7/30
480 预期 2026/12/22
480 预期 2027/1/7
240 预期 2027/4/29
|
|
|
¥98.762
|
|
|
¥58.9747
|
|
|
¥50.2963
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
48 A
|
40 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
39 nC
|
- 55 C
|
+ 175 C
|
218 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 78 mohm G2
- IMZC120R078M2HXKSA1
- Infineon Technologies
-
1:
¥74.6139
-
480预期 2027/3/4
-
新产品
|
Mouser 零件编号
726-IMZC120R078M2HXK
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 78 mohm G2
|
|
480预期 2027/3/4
|
|
|
¥74.6139
|
|
|
¥43.5954
|
|
|
¥36.725
|
|
|
¥34.8266
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
28 A
|
78 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
21 nC
|
- 55 C
|
+ 175 C
|
143 W
|
Enhancement
|
CoolSiC
|
|
