|
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 12 mohm G2
- IMZC120R012M2HXKSA1
- Infineon Technologies
-
1:
¥220.2709
-
373库存量
-
480在途量
-
新产品
|
Mouser 零件编号
726-IMZC120R012M2HXK
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 12 mohm G2
|
|
373库存量
480在途量
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
TO-247-4
|
1 Channel
|
1.2 kV
|
129 A
|
12 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
124 nC
|
- 55 C
|
+ 175 C
|
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 17 mohm G2
- IMZC120R017M2HXKSA1
- Infineon Technologies
-
1:
¥172.7092
-
554库存量
-
240在途量
-
新产品
|
Mouser 零件编号
726-IMZC120R017M2HXK
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 17 mohm G2
|
|
554库存量
240在途量
|
|
|
¥172.7092
|
|
|
¥124.7407
|
|
|
¥108.3557
|
|
|
¥103.4741
|
|
|
报价
|
|
|
报价
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
TO-247-4
|
1 Channel
|
1.2 kV
|
97 A
|
17 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
89 nC
|
- 55 C
|
+ 175 C
|
382 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 22 mohm G2
- IMZC120R022M2HXKSA1
- Infineon Technologies
-
1:
¥153.2732
-
1,377库存量
-
新产品
|
Mouser 零件编号
726-IMZC120R022M2HXK
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 22 mohm G2
|
|
1,377库存量
|
|
|
¥153.2732
|
|
|
¥105.542
|
|
|
¥91.1571
|
|
|
¥84.9534
|
|
|
¥80.9758
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
TO-247-4
|
1 Channel
|
1.2 kV
|
80 A
|
22 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
71 nC
|
- 55 C
|
+ 175 C
|
329 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 34 mohm G2
- IMZC120R034M2HXKSA1
- Infineon Technologies
-
1:
¥103.7227
-
961库存量
-
新产品
|
Mouser 零件编号
726-IMZC120R034M2HXK
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 34 mohm G2
|
|
961库存量
|
|
|
¥103.7227
|
|
|
¥57.3249
|
|
|
¥54.2626
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
TO-247-4
|
1 Channel
|
1.2 kV
|
55 A
|
|
- 10 V, + 25 V
|
5.1 V
|
45 nC
|
- 55 C
|
+ 175 C
|
244 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 53 mohm G2
- IMZC120R053M2HXKSA1
- Infineon Technologies
-
1:
¥84.0381
-
677库存量
-
新产品
|
Mouser 零件编号
726-IMZC120R053M2HXK
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 53 mohm G2
|
|
677库存量
|
|
|
¥84.0381
|
|
|
¥49.5505
|
|
|
¥41.9343
|
|
|
¥41.8552
|
|
|
¥40.6913
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
TO-247-4
|
1 Channel
|
1.2 kV
|
38 A
|
53 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
30 nC
|
- 55 C
|
+ 175 C
|
182 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 78 mohm G2
- IMZC120R078M2HXKSA1
- Infineon Technologies
-
1:
¥77.6649
-
480库存量
-
新产品
|
Mouser 零件编号
726-IMZC120R078M2HXK
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 78 mohm G2
|
|
480库存量
|
|
|
¥77.6649
|
|
|
¥42.2733
|
|
|
¥38.9624
|
|
|
¥35.2334
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
TO-247-4
|
1 Channel
|
1.2 kV
|
28 A
|
78 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
21 nC
|
- 55 C
|
+ 175 C
|
143 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 26 mohm G2
- IMZC120R026M2HXKSA1
- Infineon Technologies
-
1:
¥127.3849
-
86库存量
-
720在途量
-
新产品
|
Mouser 零件编号
726-IMZC120R026M2HXK
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 26 mohm G2
|
|
86库存量
720在途量
在途量:
240 预期 2026/10/8
240 预期 2026/11/5
|
|
|
¥127.3849
|
|
|
¥83.4618
|
|
|
¥76.5914
|
|
|
¥70.3086
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
TO-247-4
|
1 Channel
|
1.2 kV
|
69 A
|
25 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
124 nC
|
- 55 C
|
+ 175 C
|
289 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 40 mohm G2
- IMZC120R040M2HXKSA1
- Infineon Technologies
-
1:
¥102.2424
-
1,992在途量
-
新产品
|
Mouser 零件编号
726-IMZC120R040M2HXK
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 40 mohm G2
|
|
1,992在途量
在途量:
552 预期 2026/10/29
240 预期 2026/11/19
|
|
|
¥102.2424
|
|
|
¥57.4831
|
|
|
¥53.2682
|
|
|
¥53.1891
|
|
|
¥52.4433
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
TO-247-4
|
1 Channel
|
1.2 kV
|
48 A
|
40 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
39 nC
|
- 55 C
|
+ 175 C
|
218 W
|
Enhancement
|
CoolSiC
|
|
