Gen-3 Fast (G3F) SiC MOSFETs

GeneSiC Semiconductor Gen-3 Fast (G3F) SiC MOSFETs are developed using a proprietary trench-assisted planar technology for high-speed performance. The technology enables an extremely low RDS(ON) increase vs. temperature, which results in low power losses across the full operating range. Available in 650V and 1200V variants, these MOSFETs are optimized for faster switching speeds, higher efficiency, and increased power density. GeneSiC G3F SiC MOSFETs offer high-speed, cool-running performance, with up to a +25°C lower case temperature. The thermally enhanced TOLL package for the 650V variant provides space and thermal management advantages. The 1200V models offer the power needed for next-generation EVs and industrial applications. Typical applications include AI data centers, EV roadside superchargers, onboard chargers (OBC), energy storage systems (ESS), and solar power solutions.

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数量 RoHS ECAD模型 安装风格
封装 / 箱体
晶体管极性
通道数量
Vds-漏源极击穿电压
Id-连续漏极电流
Rds On-漏源导通电阻
通道模式
GeneSiC Semiconductor 碳化硅MOSFET 650V 27mohm TO-LL G3F SiC MOSFET

SMD/SMT TO-LL N-Channel 650 V 27 mOhms Enhancement
GeneSiC Semiconductor 碳化硅MOSFET 650V 40mohm TO-LL G3F SiC MOSFET

SMD/SMT TO-LL N-Channel 650 V 40 mOhms Enhancement
GeneSiC Semiconductor 碳化硅MOSFET 650V 55mohm TO-263-7 G3F SiC MOSFET

GeneSiC Semiconductor 碳化硅MOSFET 650V 55mohm TO-LL G3F SiC MOSFET