第四代E系列MOSFET

Vishay Semiconductors第四代E系列MOSFET是低品质因数 (FOM) MOSFET,采用E系列技术。第四代E系列MOSFET具有低有效电容,能够减少开关和导通损耗。这些MOSFET可耐受雪崩能量测试 (UIS)。第四代MOSFET采用TO-220AB、PowerPAK® SO-8L、PowerPAK® 8x8、DPAK (TO-252) 和薄引线TO-220 FULLPAK封装。典型应用包括服务器和电信电源、照明、工业、开关模式电源 (SMPS) 和功率因素校正 (PFC) 电源。

结果: 31
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 技术 安装风格 封装 / 箱体 晶体管极性 通道数量 Vds-漏源极击穿电压 Id-连续漏极电流 Rds On-漏源导通电阻 Vgs - 栅极-源极电压 Vgs th-栅源极阈值电压 Qg-栅极电荷 最小工作温度 最大工作温度 Pd-功率耗散 通道模式 商标名 封装
Vishay / Siliconix MOSFET 600V Vds; +/-30V Vgs TO-220 FULLPAK 1,113库存量
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 12 A 240 mOhms - 30 V, 30 V 3 V 23 nC - 55 C + 150 C 31 W Enhancement
Vishay / Siliconix MOSFET 600V Vds; +/-30V Vgs PowerPAK SO-8L 1,878库存量
最低: 1
倍数: 1
卷轴: 3,000

Si SMD/SMT PowerPAK-SO-8-4 N-Channel 1 Channel 600 V 12 A 240 mOhms - 30 V, 30 V 3 V 23 nC - 55 C + 150 C 89 W Enhancement Reel, Cut Tape, MouseReel
Vishay Semiconductors MOSFET 600V DPAK (TO-252) N-CHANNEL 2,871库存量
最低: 1
倍数: 1

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 6.4 A 700 mOhms - 30 V, 30 V 5 V 8 nC - 55 C + 150 C 62.5 W Enhancement Tube
Vishay Semiconductors MOSFET 600V Vds 30V Vgs TO-247AC 678库存量
最低: 1
倍数: 1

Si Through Hole TO-247AC-3 N-Channel 1 Channel 600 V 99 A 23 mOhms - 30 V, 30 V 3 V 228 nC - 55 C + 150 C 524 W Enhancement Tube
Vishay / Siliconix MOSFET 600V Vds 30V Vgs TO-220AB 851库存量
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 40 A 57 mOhms - 30 V, 30 V 3 V 98 nC - 55 C + 150 C 250 W Enhancement
Vishay / Siliconix MOSFET 600V Vds 30V Vgs D2PAK (TO-263) 869库存量
最低: 1
倍数: 1

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 19 A 180 mOhms - 30 V, 30 V 3 V 33 nC - 55 C + 150 C 156 W Enhancement
Vishay Semiconductors MOSFET 600V Vds; +/-30V Vgs DPAK (TO-252) 2,608库存量
最低: 1
倍数: 1

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 12 A 240 mOhms - 30 V, 30 V 3 V 23 nC - 55 C + 150 C 78 W Enhancement Tube
Vishay Semiconductors MOSFET 600V Vds 30V Vgs TO-220 FULLPAK 876库存量
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 19 A 180 mOhms - 30 V, 30 V 3 V 33 nC - 55 C + 150 C 33 W Enhancement
Vishay / Siliconix MOSFET E Series Pwr MOSFET w/Fast Body Diode 845库存量
最低: 1
倍数: 1
卷轴: 1,000

Si Through Hole N-Channel 1 Channel 600 V 29 A 100 mOhms - 30 V, 30 V 5 V 35 nC - 55 C + 150 C 35 W Enhancement Reel, Cut Tape, MouseReel
Vishay Semiconductors MOSFET TO220 600V 4.3A N-CH MOSFET 1,560库存量
最低: 1
倍数: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 600 V 4.3 A 600 mOhms - 30 V, 30 V 5 V 8 nC - 55 C + 150 C 29 W Enhancement TrenchFET
Vishay / Siliconix MOSFET N-CHANNEL 100 V 2,899库存量
最低: 1
倍数: 1
卷轴: 3,000

Si Through Hole N-Channel 1 Channel 800 V 4.4 A 1.35 Ohms - 30 V, 30 V 4 V 11 nC - 55 C + 150 C 62.5 W Enhancement Reel, Cut Tape
Vishay Semiconductors MOSFET PWRPK 600V 29A N-CH MOSFET 3,673库存量
最低: 1
倍数: 1
卷轴: 2,000

Si SMD/SMT PowerPAK-10 1 Channel 600 V 29 A 70 mOhms - 30 V, 30 V 5 V 41 nC - 55 C + 150 C 167 W Enhancement Reel, Cut Tape, MouseReel
Vishay / Siliconix MOSFET 600V Vds; +/-30V Vgs Thin-Lead TO-220 360库存量
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 30 A 100 mOhms - 30 V, 30 V 3 V 50 nC - 55 C + 150 C 35 W Enhancement Tube
Vishay / Siliconix MOSFET 600V Vds 30V Vgs D2PAK (TO-263) 930库存量
最低: 1
倍数: 1

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 25 A 120 mOhms - 30 V, 30 V 3 V 45 nC - 55 C + 150 C 179 W Enhancement Tube
Vishay Semiconductors MOSFET 600V Vds 30V Vgs TO-220AB 892库存量
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 19 A 180 mOhms - 30 V, 30 V 3 V 22 nC - 55 C + 150 C 156 W Enhancement
Vishay / Siliconix MOSFET PWRPK 600V 12A N-CH MOSFET 2,525库存量
最低: 1
倍数: 1
卷轴: 3,000

Si SMD/SMT PowerPAK 8 x 8 - 8 N-Channel 1 Channel 600 V 12 A 208 mOhms - 30 V, 30 V 5 V 23 nC - 55 C + 150 C 89 W Enhancement Reel, Cut Tape
Vishay / Siliconix MOSFET 600V Vds; +/-30V Vgs PowerPAK 8x8 1,993库存量
最低: 1
倍数: 1
卷轴: 3,000

Si SMD/SMT PowerPAK-4 N-Channel 1 Channel 600 V 24 A 120 mOhms - 30 V, 30 V 3 V 44 nC - 55 C + 150 C 156 W Enhancement Reel, Cut Tape, MouseReel
Vishay MOSFET 1,536库存量
最低: 1
倍数: 1
卷轴: 800

Si Reel, Cut Tape
Vishay / Siliconix MOSFET N-CHANNEL 650V 2,158库存量
最低: 1
倍数: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 650 V 14 A 70 mOhms - 30 V, 30 V 5 V 53 nC - 55 C + 150 C 39 W Enhancement Tube
Vishay Semiconductors MOSFET 600V Vds 30V Vgs PowerPAK 8 x 8 1,770库存量
最低: 1
倍数: 1
卷轴: 3,000

Si SMD/SMT PowerPAK-4 N-Channel 1 Channel 600 V 19 A 180 mOhms - 30 V, 30 V 3 V 33 nC - 55 C + 150 C 114 W Enhancement Reel, Cut Tape, MouseReel
Vishay / Siliconix MOSFET TO247 N CHAN 700V 47A 3,269库存量
最低: 1
倍数: 1

Si Through Hole TO-247AD-3 N-Channel 1 Channel 700 V 47 A 73 mOhms - 30 V, 30 V 4 V 266 nC - 55 C + 175 C 500 W Enhancement TrenchFET Bulk
Vishay / Siliconix MOSFET 600V Vds 30V Vgs DPAK (TO-252) 3,264库存量
最低: 1
倍数: 1

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 4.2 A 1.45 Ohms - 30 V, 30 V 3 V 7.5 nC - 55 C + 150 C 63 W Enhancement
Vishay Semiconductors MOSFET N-CHANNEL 600V 4,323库存量
最低: 1
倍数: 1

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 35 A 80 mOhms - 30 V, 30 V 5 V 63 nC - 55 C + 150 C 227 W Enhancement Tube
Vishay Semiconductors MOSFET PWRPK 600V 34A N-CH MOSFET 3,699库存量
最低: 1
倍数: 1
卷轴: 2,000

Si SMD/SMT PowerPAK-10 1 Channel 600 V 34 A 59 mOhms - 30 V, 30 V 5 V 41 nC - 55 C + 150 C 192 W Enhancement Reel, Cut Tape, MouseReel
Vishay / Siliconix MOSFET 600V Vds 30V Vgs PowerPAK 8 x 8 1,198库存量
最低: 1
倍数: 1
卷轴: 3,000

Si SMD/SMT PowerPAK-4 N-Channel 1 Channel 600 V 34 A 68 mOhms - 30 V, 30 V 3 V 80 nC - 55 C + 150 C 202 W Enhancement Reel, Cut Tape, MouseReel