FAN3180TSX

onsemi
512-FAN3180TSX
FAN3180TSX

制造商:

说明:
栅极驱动器 Single 2 A Low-Side Driver w/ 3.3V LDO

ECAD模型:
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库存量: 13,560

库存:
13,560 可立即发货
生产周期:
14 周 大于所示数量的预计工厂生产时间。
最少: 1   倍数: 1
单价:
¥-.--
总价:
¥-.--
预估关税:
封装:
整卷卷轴(请按3000的倍数订购)

定价 (含13% 增值税)

数量 单价
总价
剪切带/MouseReel™
¥10.0909 ¥10.09
¥7.345 ¥73.45
¥6.6557 ¥166.39
¥5.876 ¥587.60
¥5.5144 ¥1,378.60
¥5.2884 ¥2,644.20
¥4.8929 ¥4,892.90
整卷卷轴(请按3000的倍数订购)
¥4.7686 ¥14,305.80
¥4.6782 ¥28,069.20
† ¥15.00 MouseReel™费将被加上并在购物车计算。所有MouseReel™订单均不可撤消和退回。

产品属性 属性值 选择属性
onsemi
产品种类: 栅极驱动器
RoHS:  
MOSFET Gate Drivers
Low-Side
SMD/SMT
SOT-23-5
1 Driver
1 Output
2 A
5 V
18 V
Non-Inverting
19 ns
13 ns
- 40 C
+ 125 C
FAN3180
Reel
Cut Tape
MouseReel
商标: onsemi
工作电源电流: 12.5 mA
输出电压: 3.3 V
产品类型: Gate Drivers
工厂包装数量: 3000
子类别: PMIC - Power Management ICs
技术: Si
单位重量: 6.300 mg
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已选择的属性: 0

CNHTS:
8542399000
CAHTS:
8542390000
USHTS:
8542390090
KRHTS:
8542311000
TARIC:
8542319000
MXHTS:
8542399999
ECCN:
EAR99

FAN3180 Single 2A Low Side Driver

onsemi / Fairchild FAN3180 Single 2A Low Side Driver combines a high-speed low-side gate driver with a 3.3V output Low Drop Out (LDO) regulator. The gate driver is rated to 2.8A peak current at VDD of 12V and is designed to drive an N-channel enhancement-mode MOSFET in low-side switching applications. The FAN3180 also integrates a 3.3V, 15mA LDO with tight voltage tolerance of ±1% at 25°C and ±2.5% of the total variation for powering external microcontrollers. Internal circuitry provides an Under-Voltage Lockout (UVLO) function by holding the output low until the supply voltage is within the operating range, and the first full input pulse is detected. The onsemi / Fairchild FAN3180 has UVLO thresholds of 4.75V VON and 4.55V VOFF and a maximum standby supply current of 200μA. The driver delivers fast MOSFET switching performance to maximize efficiency in high-frequency power converter designs. It incorporates the MillerDrive™ architecture for the final output driver stage. This bipolar-MOSFET combination provides a high peak current during the Miller plateau stage of the MOSFET turn-on/turn-off process to minimize switching loss while providing rail-to-rail voltage swing and reverse current capability. The thermal shutdown function is included as an additional safety feature.