1200V C4MS分立式SiC MOSFET

Wolfspeed 1200V C4MS分立式碳化矽(SiC)MOSFET可在硬开关应用中提供无与伦比的性能。C4MS系列采用快速软体二极管,可实现快速切换,同时将过冲和振铃降至最低,从而为工程师扩展可用的设计空间,以便调整和优化应用中的性能。与C3M系列器件相比,C4MS系列器件在保持较低的RDS(on)温度系数的同时,可提供更低的Eon、ERR和Eoff损耗。这种平衡方法可在广泛的硬开关和软开关拓扑结构中提供最大的性能和效率。

结果: 16
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 安装风格 封装 / 箱体 晶体管极性 通道数量 Vds-漏源极击穿电压 Id-连续漏极电流 Rds On-漏源导通电阻 Vgs - 栅极-源极电压 Vgs th-栅源极阈值电压 Qg-栅极电荷 最小工作温度 最大工作温度 Pd-功率耗散 通道模式
Wolfspeed 碳化硅MOSFET SiC, MOSFET,25mohm,1200V, TO-263-7 XL T&R , Industrial
SMD/SMT TO-263-7XL N-Channel 1 Channel 1.2 kV 94 A 25 mOhms - 10 V, + 23 V 2.6 V 125 nC - 40 C + 175 C 429 W Enhancement
Wolfspeed 碳化硅MOSFET SiC, MOSFET, 25mohm, 1200V, TO-247-4, Industrial
Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 86 A 25 mOhms - 10 V, + 23 V 2.6 V 125 nC - 40 C + 175 C 366 W Enhancement
Wolfspeed 碳化硅MOSFET SiC, MOSFET, 25mohm, 1200V, TO-247-4-LP, Industrial
Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 86 A 25 mOhms - 10 V, + 23 V 2.6 V 125 nC - 40 C + 175 C 366 W Enhancement
Wolfspeed 碳化硅MOSFET SiC, MOSFET,25mohm,1200V, TSC (U2), Industrial
SMD/SMT TSC (U2)-9 N-Channel 1 Channel 1.2 kV 94 A 25 mOhms - 10 V, + 23 V 2.6 V 125 nC - 40 C + 175 C 455 W Enhancement
Wolfspeed 碳化硅MOSFET SiC, MOSFET,36mohm,1200V, TO-263-7 XL T&R , Industrial
SMD/SMT TO-263-7XL N-Channel 1 Channel 1.2 kV 69 A 36 mOhms - 10 V, + 23 V 2.6 V 88 nC - 40 C + 175 C 340 W Enhancement
Wolfspeed 碳化硅MOSFET SiC, MOSFET, 36mohm, 1200V, TO-247-4, Industrial
Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 60 A 36 mOhms - 10 V, + 23 V 2.6 V 88 nC - 40 C + 175 C 272 W Enhancement
Wolfspeed 碳化硅MOSFET SiC, MOSFET, 36mohm, 1200V, TO-247-4-LP, Industrial
Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 60 A 36 mOhms - 10 V, + 23 V 2.6 V 88 nC - 40 C + 175 C 272 W Enhancement
Wolfspeed 碳化硅MOSFET SiC, MOSFET,36mohm,1200V, TSC (U2), Industrial
SMD/SMT TSC (U2)-9 N-Channel 1 Channel 1.2 kV 69 A 36 mOhms - 10 V + 23 V 2.6 V 88 nC - 40 C + 175 C 357 W Enhancement
Wolfspeed 碳化硅MOSFET SiC, MOSFET,47mohm,1200V, TO-263-7 XL T&R , Industrial
SMD/SMT TO-263-7XL N-Channel 1 Channel 1.2 kV 54 A 47 mOhms - 10 V + 23 V 2.6 V 68 nC - 40 C + 175 C 280 W Enhancement
Wolfspeed 碳化硅MOSFET SiC, MOSFET, 47mohm, 1200V, TO-247-4, Industrial
Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 50 A 47 mOhms - 10 V, + 23 V 2.6 V 68 nC - 40 C + 175 C 241 W Enhancement
Wolfspeed 碳化硅MOSFET SiC, MOSFET, 47mohm, 1200V, TO-247-4-LP, Industrial
Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 50 A 47 mOhms - 10 V, + 23 V 2.6 V 68 nC - 40 C + 175 C 241 W Enhancement
Wolfspeed 碳化硅MOSFET SiC, MOSFET,47mohm,1200V, TSC (U2), Industrial
SMD/SMT TSC (U2)-9 N-Channel 1 Channel 1.2 kV 54 A 47 mOhms - 10 V + 23 V 2.6 V 68 nC - 40 C + 175 C 283 W Enhancement
Wolfspeed 碳化硅MOSFET SiC, MOSFET,65mohm,1200V, TO-263-7 XL T&R , Industrial
SMD/SMT TO-263-7XL N-Channel 1 Channel 1.2 kV 40 A 65 mOhms - 10 V + 23 V 2.6 V 51 nC - 40 C + 175 C 211 W Enhancement
Wolfspeed 碳化硅MOSFET SiC, MOSFET, 65mohm, 1200V, TO-247-4, Industrial
Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 39 A 65 mOhms - 10 V, + 23 V 2.6 V 51 nC - 40 C + 175 C 182 W Enhancement
Wolfspeed 碳化硅MOSFET SiC, MOSFET, 65mohm, 1200V, TO-247-4-LP, Industrial
Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 39 A 65 mOhms - 10 V, + 23 V 2.6 V 51 nC - 40 C + 175 C 182 W Enhancement
Wolfspeed 碳化硅MOSFET SiC, MOSFET,65mohm,1200V, TSC (U2), Industrial
SMD/SMT TSC (U2)-9 N-Channel 1 Channel 1.2 kV 42 A 65 mOhms - 10 V + 23 V 2.6 V 51 nC - 40 C + 175 C 215 W Enhancement