RGW 650V场终止沟槽型IGBT

ROHM Semiconductor RGW 650V场终止沟槽型IGBT采用小型封装,具有低集电极-发射极饱和电压。RGW IGBT具有高速开关、低开关损耗和内置极快软恢复FRD。ROHM RGW 650V场终止沟槽型IGBT非常适合用于太阳能逆变器、UPS、焊接、IH和PFC应用。

结果: 51
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 技术 封装 / 箱体 安装风格 配置 集电极—发射极最大电压 VCEO 集电极—射极饱和电压 栅极/发射极最大电压 在25 C的连续集电极电流 Pd-功率耗散 最小工作温度 最大工作温度 封装
ROHM Semiconductor 绝缘栅双极晶体管(IGBT) TO247 650V 50A TRNCH 840库存量
最低: 1
倍数: 1

Si TO-247GE-3 Through Hole Single 650 V 2.1 V 30 V 85 A 277 W - 40 C + 175 C Tube
ROHM Semiconductor 绝缘栅双极晶体管(IGBT) 650V 30A TO-3PFM Field Stp Trnch IGBT 448库存量
最低: 1
倍数: 1

Si TO-3PFM-3 Through Hole Single 650 V 1.9 V 30 V 33 A 72 W - 40 C + 175 C Tube
ROHM Semiconductor 绝缘栅双极晶体管(IGBT) 650V 30A TO-3PFM Field Stp Trnch IGBT 446库存量
最低: 1
倍数: 1

Si TO-3PFM-3 Through Hole Single 650 V 1.9 V 30 V 33 A 72 W - 40 C + 175 C Tube
ROHM Semiconductor 绝缘栅双极晶体管(IGBT) 650V 40A TO-3PFM Field Stp Trnch IGBT 449库存量
最低: 1
倍数: 1

Si TO-3PFM-3 Through Hole Single 650 V 1.9 V 30 V 39 A 81 W - 40 C + 175 C Tube
ROHM Semiconductor 绝缘栅双极晶体管(IGBT) 650V 40A TO-3PFM Field Stp Trnch IGBT 358库存量
最低: 1
倍数: 1

Si TO-3PFM-3 Through Hole Single 650 V 1.9 V 30 V 39 A 81 W - 40 C + 175 C Tube
ROHM Semiconductor 绝缘栅双极晶体管(IGBT) High-Speed Fast Switching Type, 650V 50A, Automotive Hybrid IGBT with Built-In SiC-SBD 458库存量
最低: 1
倍数: 1

SiC TO-247N-3 Through Hole Single 650 V 1.9 V 30 V 96 A 254 W - 40 C + 175 C Tube
ROHM Semiconductor 绝缘栅双极晶体管(IGBT) High-Speed Fast Switching Type, 650V 18A, TO-3PFM, Field Stop Trench IGBT 440库存量
最低: 1
倍数: 1

Si TO-3PFM-3 Through Hole Single 650 V 1.9 V 30 V 30 A 67 W - 40 C + 175 C Tube
ROHM Semiconductor 绝缘栅双极晶体管(IGBT) High-Speed Fast Switch 650V 20A FRD Built-in TO-247N Field Stop Trench IGBT 600库存量
最低: 1
倍数: 1

Si TO-247GE-3 Through Hole Single 650 V 1.9 V 30 V 40 A 136 W - 40 C + 175 C Tube
ROHM Semiconductor 绝缘栅双极晶体管(IGBT) High-Speed Fast Switch 650V 25A FRD Built-in TO-247N Field Stop Trench IGBT 600库存量
最低: 1
倍数: 1

Si TO-247GE-3 Through Hole Single 650 V 1.9 V 30 V 50 A 156 W - 40 C + 175 C Tube
ROHM Semiconductor 绝缘栅双极晶体管(IGBT) High-Speed Fast Switch 650V 75A FRD Built-in TO-247N Field Stop Trench IGBT 590库存量
最低: 1
倍数: 1

Si TO-247GE-3 Through Hole Single 650 V 1.9 V 30 V 132 A 348 W - 40 C + 175 C Bulk
ROHM Semiconductor 绝缘栅双极晶体管(IGBT) High-Speed Fast Switching Type, 650V 75A, TO-247N, Field Stop Trench IGBT 600库存量
最低: 1
倍数: 1

Si TO-247GE-3 Through Hole Single 650 V 1.9 V 30 V 132 A 348 W - 40 C + 175 C Bulk
ROHM Semiconductor 绝缘栅双极晶体管(IGBT) High-Speed Fast Switching Type, 650V 20A, TO-247N, Field Stop Trench IGBT 475库存量
最低: 1
倍数: 1

Si TO-247GE-3 Through Hole Single 650 V 1.9 V 30 V 40 A 136 W - 40 C + 175 C Tube
ROHM Semiconductor 绝缘栅双极晶体管(IGBT) High-Speed Fast Switching Type, 650V 25A, TO-247N, Field Stop Trench IGBT 600库存量
最低: 1
倍数: 1

Si TO-247GE-3 Through Hole Single 650 V 1.9 V 30 V 50 A 156 W - 40 C + 175 C Tube
ROHM Semiconductor 绝缘栅双极晶体管(IGBT) TO247 650V 30A TRNCH 1,019库存量
最低: 1
倍数: 1

Si TO-247GE-3 Through Hole Single 650 V 2.1 V 30 V 58 A 194 W - 40 C + 175 C Tube
ROHM Semiconductor 绝缘栅双极晶体管(IGBT) TO247 650V 30A TRNCH 1,153库存量
最低: 1
倍数: 1

Si TO-247GE-3 Through Hole Single 650 V 2.1 V 30 V 58 A 194 W - 40 C + 175 C Tube
ROHM Semiconductor 绝缘栅双极晶体管(IGBT) High-Speed Fast Switching Type, 650V 20A, FRD Built-in, LPDL, Field Stop Trench IGBT for Automotive: RGW40NL65DHRB is a IGBT with low collector - emitter saturation voltage, suitable for On & Off Board Chagers, DC-DC Converters, PFC, Industrial Inver 2,000库存量
最低: 1
倍数: 1
卷轴: 1,000

Si TO-263-3 SMD/SMT Single 650 V 1.9 V 30 V 48 A 144 W - 40 C + 175 C Reel, Cut Tape
ROHM Semiconductor 绝缘栅双极晶体管(IGBT) High-Speed Fast Switching Type, 650V 20A, LPDL, Field Stop Trench IGBT for Automotive: RGW40NL65HRB is a IGBT with low collector - emitter saturation voltage, suitable for On & Off Board Chagers, DC-DC Converters, PFC, Industrial Inverter. This produ 1,990库存量
最低: 1
倍数: 1
卷轴: 1,000

Si TO-263-3 SMD/SMT Single 650 V 1.9 V 30 V 48 A 144 W - 40 C + 175 C Reel, Cut Tape
ROHM Semiconductor 绝缘栅双极晶体管(IGBT) High-Speed Fast Switching Type, 650V 25A, FRD Built-in, LPDL, Field Stop Trench IGBT for Automotive: RGW50NL65DHRB is a IGBT with low collector - emitter saturation voltage, suitable for On & Off Board Chagers, DC-DC Converters, PFC, Industrial Inver 2,000库存量
最低: 1
倍数: 1
卷轴: 1,000

Si TO-263-3 SMD/SMT Single 650 V 1.9 V 30 V 57 A 165 W - 40 C + 175 C Reel, Cut Tape
ROHM Semiconductor 绝缘栅双极晶体管(IGBT) High-Speed Fast Switching Type, 650V 25A, LPDL, Field Stop Trench IGBT for Automotive: RGW50NL65HRB is a IGBT with low collector - emitter saturation voltage, suitable for On & Off Board Chagers, DC-DC Converters, PFC, Industrial Inverter. This produ 2,000库存量
最低: 1
倍数: 1
卷轴: 1,000

Si TO-263-3 SMD/SMT Single 650 V 1.9 V 30 V 57 A 165 W - 40 C + 175 C Reel, Cut Tape
ROHM Semiconductor 绝缘栅双极晶体管(IGBT) High-Speed Fast Switching Type, 650V 30A, FRD Built-in, LPDL, Field Stop Trench IGBT for Automotive: RGW60NL65DHRB is a IGBT with low collector - emitter saturation voltage, suitable for On & Off Board Chagers, DC-DC Converters, PFC, Industrial Inver 2,000库存量
最低: 1
倍数: 1
卷轴: 1,000

Si TO-263-3 SMD/SMT Single 650 V 1.9 V 30 V 67 A 187 W - 40 C + 175 C Reel, Cut Tape
ROHM Semiconductor 绝缘栅双极晶体管(IGBT) High-Speed Fast Switching Type, 650V 30A, LPDL, Field Stop Trench IGBT for Automotive: RGW60NL65HRB is a IGBT with low collector - emitter saturation voltage, suitable for On & Off Board Chagers, DC-DC Converters, PFC, Industrial Inverter. This produ 1,990库存量
最低: 1
倍数: 1
卷轴: 1,000

Si TO-263-3 SMD/SMT Single 650 V 1.9 V 30 V 67 A 187 W - 40 C + 175 C Reel, Cut Tape
ROHM Semiconductor 绝缘栅双极晶体管(IGBT) High-Speed Fast Switching Type, 650V 40A, FRD Built-in, LPDL, Field Stop Trench IGBT for Automotive: RGW80NL65DHRB is a IGBT with low collector - emitter saturation voltage, suitable for On & Off Board Chagers, DC-DC Converters, PFC, Industrial Inver 1,648库存量
最低: 1
倍数: 1
卷轴: 1,000

Si TO-263-3 SMD/SMT Single 650 V 1.9 V 30 V 83 A 227 W - 40 C + 175 C Reel, Cut Tape
ROHM Semiconductor 绝缘栅双极晶体管(IGBT) High-Speed Fast Switching Type, 650V 40A, LPDL, Field Stop Trench IGBT for Automotive: RGW80NL65HRB is a IGBT with low collector - emitter saturation voltage, suitable for On & Off Board Chagers, DC-DC Converters, PFC, Industrial Inverter. This produ 1,981库存量
最低: 1
倍数: 1
卷轴: 1,000

Si TO-263-3 SMD/SMT Single 650 V 1.9 V 30 V 83 A 227 W - 40 C + 175 C Reel, Cut Tape
ROHM Semiconductor 绝缘栅双极晶体管(IGBT) High-Speed Fast Switching Type, 650V 40A, FRD Built-in, TO-3PFM, Field Stop Trench IGBT 840库存量
最低: 1
倍数: 1

Si TO-3PFM-3 Through Hole Single 650 V 1.9 V 30 V 39 A 81 W - 40 C + 175 C Tube
ROHM Semiconductor 绝缘栅双极晶体管(IGBT) TO3P 650V 16A TRNCH 900库存量
最低: 1
倍数: 1

Si TO-3PFM-3 Through Hole Single 650 V 1.9 V 30 V 27 A 61 W - 40 C + 175 C Tube