RGW 650V场终止沟槽型IGBT

ROHM Semiconductor RGW 650V场终止沟槽型IGBT采用小型封装,具有低集电极-发射极饱和电压。RGW IGBT具有高速开关、低开关损耗和内置极快软恢复FRD。ROHM RGW 650V场终止沟槽型IGBT非常适合用于太阳能逆变器、UPS、焊接、IH和PFC应用。

结果: 51
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 技术 封装 / 箱体 安装风格 配置 集电极—发射极最大电压 VCEO 集电极—射极饱和电压 栅极/发射极最大电压 在25 C的连续集电极电流 Pd-功率耗散 最小工作温度 最大工作温度 封装
ROHM Semiconductor 绝缘栅双极晶体管(IGBT) TO3P 650V 16A TRNCH 895库存量
最低: 1
倍数: 1

Si TO-3PFM-3 Through Hole Single 650 V 1.9 V 30 V 27 A 61 W - 40 C + 175 C Tube
ROHM Semiconductor 绝缘栅双极晶体管(IGBT) TO247 650V 30A TRNCH 2,394库存量
最低: 1
倍数: 1

Si TO-247GE-3 Through Hole Single 650 V 2 V 30 V 51 A 156 W - 40 C + 175 C Tube
ROHM Semiconductor 绝缘栅双极晶体管(IGBT) TO247 650V 40A TRNCH 2,388库存量
最低: 1
倍数: 1

Si TO-247GE-3 Through Hole Single 650 V 2 V 30 V 71 A 202 W - 40 C + 175 C Tube
ROHM Semiconductor 绝缘栅双极晶体管(IGBT) TO247 650V 60A TRNCH 2,387库存量
最低: 1
倍数: 1

Si TO-247GE-3 Through Hole Single 650 V 2 V 30 V 104 A 288 W - 40 C + 175 C Tube
ROHM Semiconductor 绝缘栅双极晶体管(IGBT) High-Speed Fast Switching Type, 650V 40A, Automotive Hybrid IGBT with Built-In SiC-SBD 443库存量
最低: 1
倍数: 1

SiC TO-247N-3 Through Hole Single 650 V 1.9 V 30 V 81 A 214 W - 40 C + 175 C Tube
ROHM Semiconductor 绝缘栅双极晶体管(IGBT) 650V 50A TO-3PFM Field Stp Trnch IGBT 450库存量
最低: 1
倍数: 1

Si TO-3PFM-3 Through Hole Single 650 V 1.9 V 30 V 45 A 89 W - 40 C + 175 C Tube
ROHM Semiconductor 绝缘栅双极晶体管(IGBT) High-Speed Fast Switching Type, 650V 50A, FRD Built-in, TO-247N, Field Stop Trench IGBT 450库存量
最低: 1
倍数: 1

Si TO-247N-3 Through Hole Single 650 V 1.9 V 30 V 96 A 254 W - 40 C + 175 C Tube
ROHM Semiconductor 绝缘栅双极晶体管(IGBT) High-Speed Fast Switching Type, 650V 50A, FRD Built-in, TO-247N, Field Stop Trench IGBT 450库存量
最低: 1
倍数: 1

Si TO-247N-3 Through Hole Single 650 V 1.9 V 30 V 96 A 254 W - 40 C + 175 C Tube
ROHM Semiconductor 绝缘栅双极晶体管(IGBT) High-Speed Fast Switching Type, 650V 50A, TO-247N, Field Stop Trench IGBT 450库存量
最低: 1
倍数: 1

Si TO-247N-3 Through Hole Single 650 V 1.9 V 30 V 96 A 254 W - 40 C + 175 C Tube
ROHM Semiconductor 绝缘栅双极晶体管(IGBT) High-Speed Fast Switching Type, 650V 18A, FRD Built-in, TO-3PFM, Field Stop Trench IGBT 448库存量
最低: 1
倍数: 1

Si TO-3PFM-3 Through Hole Single 650 V 1.9 V 30 V 30 A 67 W - 40 C + 175 C Tube
ROHM Semiconductor 绝缘栅双极晶体管(IGBT) High-Speed Fast Switching Type, 650V 30A, FRD Built-in, TO-247N, Field Stop Trench IGBT 450库存量
最低: 1
倍数: 1

Si TO-247N-3 Through Hole Single 650 V 1.9 V 30 V 64 A 178 W - 40 C + 175 C Tube
ROHM Semiconductor 绝缘栅双极晶体管(IGBT) High-Speed Fast Switching Type, 650V 30A, FRD Built-in, TO-247N, Field Stop Trench IGBT 450库存量
最低: 1
倍数: 1

Si TO-247N-3 Through Hole Single 650 V 1.9 V 30 V 64 A 178 W - 40 C + 175 C Tube
ROHM Semiconductor 绝缘栅双极晶体管(IGBT) High-Speed Fast Switching Type, 650V 30A, TO-247N, Field Stop Trench IGBT 450库存量
最低: 1
倍数: 1

Si TO-247N-3 Through Hole Single 650 V 1.9 V 30 V 64 A 178 W - 40 C + 175 C Tube
ROHM Semiconductor 绝缘栅双极晶体管(IGBT) High-Speed Fast Switching Type, 650V 40A, FRD Built-in, TO-247N, Field Stop Trench IGBT 450库存量
最低: 1
倍数: 1

Si TO-247N-3 Through Hole Single 650 V 1.9 V 30 V 80 A 214 W - 40 C + 175 C Tube
ROHM Semiconductor 绝缘栅双极晶体管(IGBT) Transistor, IGBT, 650V 40A, FRD Built-in, TO-247N, Field Stop Trench IGBT 450库存量
最低: 1
倍数: 1

Si TO-247N-3 Through Hole Single 650 V 1.9 V 30 V 80 A 214 W - 40 C + 175 C Tube
ROHM Semiconductor 绝缘栅双极晶体管(IGBT) High-Speed Fast Switching Type, 650V 40A, TO-247N, Field Stop Trench IGBT 450库存量
最低: 1
倍数: 1

Si TO-247N-3 Through Hole Single 650 V 1.9 V 30 V 80 A 214 W - 40 C + 175 C Tube
ROHM Semiconductor 绝缘栅双极晶体管(IGBT) TO247 650V 50A TRNCH 2,400库存量
最低: 1
倍数: 1

Si TO-247GE-3 Through Hole Single 650 V 2 V 30 V 88 A 245 W - 40 C + 175 C Tube
ROHM Semiconductor 绝缘栅双极晶体管(IGBT) TO247 650V 50A TRNCH 2,400库存量
最低: 1
倍数: 1

Si TO-247GE-3 Through Hole Single 650 V 2 V 30 V 88 A 245 W - 40 C + 175 C Tube
ROHM Semiconductor 绝缘栅双极晶体管(IGBT) TO247 650V 30A TRNCH 2,394库存量
最低: 1
倍数: 1

Si TO-247GE-3 Through Hole Single 650 V 2 V 30 V 51 A 156 W - 40 C + 175 C Tube
ROHM Semiconductor 绝缘栅双极晶体管(IGBT) TO247 650V 40A TRNCH 2,400库存量
最低: 1
倍数: 1

Si TO-247GE-3 Through Hole Single 650 V 2 V 30 V 71 A 202 W - 40 C + 175 C Tube
ROHM Semiconductor 绝缘栅双极晶体管(IGBT) TO247 650V 60A TRNCH 2,400库存量
最低: 1
倍数: 1

Si TO-247GE-3 Through Hole Single 650 V 2 V 30 V 104 A 288 W - 40 C + 175 C Tube
ROHM Semiconductor 绝缘栅双极晶体管(IGBT) High-Speed Fast Switching Type, 650V 75A, FRD Built-in, TO-247N, Field Stop Trench IGBT 400库存量
最低: 1
倍数: 1

Si TO-247N-3 Through Hole Single 650 V 1.9 V 30 V 132 A 348 W - 40 C + 175 C Tube
ROHM Semiconductor 绝缘栅双极晶体管(IGBT) High-Speed Fast Switching Type, 650V 75A, FRD Built-in, TO-247N, Field Stop Trench IGBT 450库存量
最低: 1
倍数: 1

Si TO-247N-3 Through Hole Single 650 V 1.9 V 30 V 132 A 348 W - 40 C + 175 C Tube
ROHM Semiconductor 绝缘栅双极晶体管(IGBT) Transistor IGBT, 650V 75A, TO-247N 450库存量
最低: 1
倍数: 1

Si TO-247N-3 Through Hole Single 650 V 1.9 V 30 V 132 A 348 W - 40 C + 175 C Tube
ROHM Semiconductor 绝缘栅双极晶体管(IGBT) High-Speed Fast Switching Type, 650V 30A, Automotive Hybrid IGBT with Built-In SiC-SBD 3库存量
最低: 1
倍数: 1

SiC TO-247N-3 Through Hole Single 650 V 1.9 V 30 V 64 A 178 W - 40 C + 175 C Tube