CoolSiC™ 1200V SiC沟槽式MOSFET

英飞凌CoolSiC ™ 1200V SiC沟槽式MOSFET将碳化硅的强大物理特性与提高器件性能、可靠性和易用性的独特特性结合在一起。 CoolSiC 1200V SiC沟槽式MOSFET基于先进的沟槽半导体工艺,经过优化,可实现最低应用损耗和最高运行可靠性。 这些器件适用于在高温和恶劣环境中运行,能够以最高的系统效率实现简化和有效的部署。

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Infineon Technologies 碳化硅MOSFET CoolSiC 1200 V, 14 mohm SiC Trench MOSFET in TO247-3 package 1,212库存量
最低: 1
倍数: 1

SiC MOSFETS Through Hole N-Channel
Infineon Technologies 碳化硅MOSFET CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package 617库存量
最低: 1
倍数: 1
: 1,000

SiC MOSFETS SMD/SMT TO-263-7 N-Channel
Infineon Technologies 碳化硅MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-4 package 368库存量
最低: 1
倍数: 1

SiC MOSFETS Through Hole TO-247-4 N-Channel
Infineon Technologies 碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 34 mohm G2 699库存量
最低: 1
倍数: 1

SiC MOSFETS Through Hole TO-247-4 N-Channel
Infineon Technologies MOSFET CoolSiC 1200 V, 30 mohm SiC Trench MOSFET in TO-247-4 package 603库存量
最低: 1
倍数: 1

MOSFETs Si
Infineon Technologies 碳化硅MOSFET CoolSiC 1200 V, 7 mohm SiC Trench MOSFET in TO247-3 package 749库存量
最低: 1
倍数: 1

SiC MOSFETS Through Hole N-Channel
Infineon Technologies 碳化硅MOSFET CoolSiC 1200 V, 20 mohm SiC Trench MOSFET in TO247-3 package 333库存量
最低: 1
倍数: 1

SiC MOSFETS Through Hole N-Channel
Infineon Technologies 碳化硅MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-3 package 597库存量
720预期 2027/5/6
最低: 1
倍数: 1

SiC MOSFETS Through Hole TO-247-3 N-Channel
Infineon Technologies 碳化硅MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-3 package 4,638库存量
最低: 1
倍数: 1

SiC MOSFETS Through Hole TO-247-3 N-Channel
Infineon Technologies 碳化硅MOSFET CoolSiC MOSFET discrete 1200 V in TO247-4 package 297库存量
最低: 1
倍数: 1

SiC MOSFETS Through Hole TO-247-4 N-Channel
Infineon Technologies 碳化硅MOSFET CoolSiC 1200 V, 7 mohm SiC Trench MOSFET in TO247-4 package 557库存量
最低: 1
倍数: 1

SiC MOSFETS Through Hole TO-247-4 N-Channel
Infineon Technologies 碳化硅MOSFET CoolSiC 1200 V, 14 mohm SiC Trench MOSFET in TO247-4 package 571库存量
最低: 1
倍数: 1

SiC MOSFETS Through Hole TO-247-4 N-Channel
Infineon Technologies 碳化硅MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
480预期 2026/9/24
最低: 1
倍数: 1

SiC MOSFETS Through Hole TO-247-3 N-Channel
Infineon Technologies 碳化硅MOSFET CoolSiC 1200 V, 40 mohm SiC Trench MOSFET in TO247-3 package 20库存量
2,640在途量
最低: 1
倍数: 1

SiC MOSFETS Through Hole N-Channel
Infineon Technologies 碳化硅MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-3 package 80库存量
240在途量
最低: 1
倍数: 1

SiC MOSFETS Through Hole TO-247-3 N-Channel
Infineon Technologies 碳化硅MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-3 package 487库存量
240预期 2027/5/13
最低: 1
倍数: 1

SiC MOSFETS Through Hole TO-247-3 N-Channel
Infineon Technologies 碳化硅MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-4 package 15库存量
960预期 2026/9/14
最低: 1
倍数: 1

SiC MOSFETS Through Hole TO-247-4 N-Channel
Infineon Technologies 碳化硅MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-4 package 30库存量
1,920在途量
最低: 1
倍数: 1

SiC MOSFETS Through Hole TO-247-4 N-Channel
Infineon Technologies 碳化硅MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
2,160在途量
最低: 1
倍数: 1

SiC MOSFETS Through Hole TO-247-4 N-Channel
Infineon Technologies 碳化硅MOSFET CoolSiC 1200 V, 20 mohm SiC Trench MOSFET in TO247-4 package
2,877在途量
最低: 1
倍数: 1

SiC MOSFETS Through Hole TO-247-4 N-Channel
Infineon Technologies 碳化硅MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-3 package 交货期 52 周
最低: 1
倍数: 1

SiC MOSFETS Through Hole TO-247-3 N-Channel
Infineon Technologies 碳化硅MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
960在途量
最低: 1
倍数: 1

SiC MOSFETS Through Hole TO-247-4 N-Channel
Infineon Technologies 碳化硅MOSFET CoolSiC 1200 V, 40 mohm SiC Trench MOSFET in TO247-4 package
741在途量
最低: 1
倍数: 1

SiC MOSFETS Through Hole TO-247-4 N-Channel