结果: 29
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 技术 安装风格 封装 / 箱体 晶体管极性 通道数量 Vds-漏源极击穿电压 Id-连续漏极电流 Rds On-漏源导通电阻 Vgs - 栅极-源极电压 Vgs th-栅源极阈值电压 Qg-栅极电荷 最小工作温度 最大工作温度 Pd-功率耗散 通道模式 商标名 封装
Infineon Technologies MOSFET N-Ch 650V 46A TO220-3 CoolMOS C7 753库存量
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 46 A 40 mOhms - 20 V, 20 V 3 V 93 nC - 55 C + 150 C 227 W Enhancement CoolMOS Tube

Infineon Technologies MOSFET HIGH POWERNEW 886库存量
最低: 1
倍数: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 24 A 84 mOhms - 20 V, 20 V 3 V 45 nC - 55 C + 150 C 128 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW 467库存量
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 33 A 58 mOhms - 20 V, 20 V 3 V 64 nC - 55 C + 150 C 171 W Enhancement CoolMOS Tube

Infineon Technologies MOSFET N-Ch 650V 75A TO247-3 CoolMOS C7 773库存量
最低: 1
倍数: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 75 A 19 mOhms - 20 V, 20 V 3 V 215 nC - 55 C + 150 C 446 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET N-Ch 650V 10A ThinPAK-4 CoolMOS C7 6,349库存量
最低: 1
倍数: 1
: 3,000

Si SMD/SMT VSON-4 N-Channel 1 Channel 650 V 10 A 230 mOhms - 20 V, 20 V 4 V 20 nC - 40 C + 150 C 67 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET HIGH POWER BEST IN CLASS 178库存量
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 18 A 40 mOhms - 20 V, 20 V 3 V 93 nC - 55 C + 150 C 35 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER BEST IN CLASS 242库存量
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 12 A 84 mOhms - 20 V, 20 V 3 V 45 nC - 55 C + 150 C 34 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER BEST IN CLASS 243库存量
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 15 A 58 mOhms - 20 V, 20 V 3 V 64 nC - 55 C + 150 C 34 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET N-Ch 700V 75A TO247-4 93库存量
最低: 1
倍数: 1

Si Through Hole TO-247-4 N-Channel 1 Channel 650 V 75 A 17 mOhms - 20 V, 20 V 3 V 215 nC - 55 C + 150 C 446 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW 998库存量
2,000预期 2027/1/28
最低: 1
倍数: 1
: 1,000

Si SMD/SMT D2PAK-3 (TO-263-3) Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET HIGH POWER_NEW 1,264库存量
最低: 1
倍数: 1
: 1,000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 650 V 33 A 65 mOhms - 20 V, 20 V 4 V 64 nC - 55 C + 150 C 171 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET HIGH POWER_NEW 916库存量
最低: 1
倍数: 1
: 1,000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 650 V 24 A 84 mOhms - 20 V, 20 V 3 V 45 nC - 55 C + 150 C 128 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET N-Ch 650V 11A DPAK-2 CoolMOS C7 1,641库存量
最低: 1
倍数: 1
: 2,500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 650 V 11 A 225 mOhms - 20 V, 20 V 4 V 20 nC - 55 C + 150 C 63 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET HIGH POWER BEST IN CLASS 69库存量
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 10 A 125 mOhms - 20 V, 20 V 3 V 35 nC - 55 C + 150 C 32 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER BEST IN CLASS 155库存量
500预期 2026/7/16
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 8 A 168 mOhms - 20 V, 20 V 3 V 23 nC - 55 C + 150 C 30 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW 1,081库存量
最低: 1
倍数: 1
: 2,500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 650 V 13 A 190 mOhms - 20 V, 20 V 3 V 23 nC - 55 C + 150 C 72 W Enhancement CoolMOS Reel, Cut Tape

Infineon Technologies MOSFET HIGH POWER_NEW 243库存量
最低: 1
倍数: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 13 A 168 mOhms - 20 V, 20 V 3.5 V 23 nC - 55 C + 150 C 72 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW 932库存量
1,000预期 2026/9/24
最低: 1
倍数: 1
: 1,000

Si SMD/SMT TO-263 N-Channel 1 Channel 650 V 13 A 404 mOhms - 20 V, 20 V 3.5 V 23 nC - 55 C + 150 C 72 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET HIGH POWER_NEW 99库存量
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 24 A 84 mOhms - 20 V, 20 V 3 V 45 nC - 55 C + 150 C 128 W Enhancement CoolMOS Tube

Infineon Technologies MOSFET N-Ch 650V 46A TO247-3 CoolMOS C7 41库存量
240预期 2026/7/15
最低: 1
倍数: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 46 A 40 mOhms - 20 V, 20 V 3.5 V 93 nC - 55 C + 150 C 227 W Enhancement CoolMOS Tube

Infineon Technologies MOSFET HIGH POWER_NEW 194库存量
最低: 1
倍数: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 33 A 65 mOhms - 20 V, 20 V 3 V 64 nC - 55 C + 150 C 171 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET N-Ch 700V 46A TO247-4
240预期 2027/2/18
最低: 1
倍数: 1

Si Through Hole TO-247-4 N-Channel 1 Channel 650 V 46 A 40 mOhms - 20 V, 20 V 3 V 93 nC - 55 C + 150 C 227 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET 650V CoolMOS C7 Power Trans; 225mOhm 无库存交货期 14 周
最低: 500
倍数: 500

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 11 A 199 mOhms - 20 V, 20 V 3 V 20 nC - 55 C + 150 C 63 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER BEST IN CLASS 无库存交货期 39 周
最低: 3,000
倍数: 3,000
: 3,000

Si SMD/SMT VSON-4 N-Channel 1 Channel 650 V 28 A 62 mOhms - 20 V, 20 V 3 V 64 nC - 40 C + 150 C 169 W Enhancement CoolMOS Reel
Infineon Technologies MOSFET HIGH POWER BEST IN CLASS 无库存交货期 39 周
最低: 3,000
倍数: 3,000
: 3,000

Si SMD/SMT VSON-4 N-Channel 1 Channel 650 V 21 A 88 mOhms - 20 V, 20 V 3 V 45 nC - 40 C + 150 C 128 W Enhancement CoolMOS Reel