12V-250V P沟道功率MOSFET

Infineon 12V-250V P沟道功率MOSFET为设计人员提供一个新选项,以便在优化性能的同时简化电路。P沟道器件的主要优点是降低了中低功耗应用中的设计复杂性。P沟道功率MOSFET非常适合用于电池保护、反极性保护、线性电池充电器、负载开关、直流-直流转换器和低压驱动应用。

结果: 27
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 技术 安装风格 封装 / 箱体 晶体管极性 通道数量 Vds-漏源极击穿电压 Id-连续漏极电流 Rds On-漏源导通电阻 Vgs - 栅极-源极电压 Vgs th-栅源极阈值电压 Qg-栅极电荷 最小工作温度 最大工作温度 Pd-功率耗散 通道模式 封装
Infineon Technologies MOSFET IFX FET > 60-80V 32,950库存量
最低: 1
倍数: 1
卷轴: 2,500

Si SMD/SMT DPAK-3 (TO-252-3) P-Channel 1 Channel 60 V 35 A 38 mOhms - 20 V, 20 V 2.1 V 63 nC - 55 C + 175 C 125 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET P-CHANNEL (NEGATIVE) 12,618库存量
最低: 1
倍数: 1
卷轴: 2,500

Si SMD/SMT SOIC-8 P-Channel 1 Channel 60 V 3.44 A 110 mOhms - 20 V, 20 V 3 V 20 nC - 55 C + 150 C 2.5 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET IFX FET >80 - 100V 4,616库存量
最低: 1
倍数: 1
卷轴: 2,500

Si SMD/SMT P-Channel 1 Channel 100 V 13.7 A 186 mOhms - 20 V, 20 V 4 V 36 nC - 55 C + 175 C 83 W Enhancement Reel, Cut Tape


Infineon Technologies MOSFET IFX FET >80 - 100V 2,983库存量
最低: 1
倍数: 1
卷轴: 2,500

Si SMD/SMT P-Channel 1 Channel 100 V 22 A 111 mOhms - 20 V, 20 V 4 V 59 nC - 55 C + 175 C 125 W Enhancement Reel, Cut Tape


Infineon Technologies MOSFET IFX FET >100-150V 5,400库存量
最低: 1
倍数: 1
卷轴: 2,500

Si SMD/SMT P-Channel 1 Channel 150 V 9 A 420 mOhms - 20 V, 20 V 2 V 43 nC - 55 C + 175 C 83 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET IFX FET > 60-80V 2,241库存量
最低: 1
倍数: 1
卷轴: 2,500

Si SMD/SMT DPAK-3 (TO-252-3) P-Channel 1 Channel 60 V 16.4 A 90 Ohms - 20 V, 20 V 2.1 V 27 nC - 55 C + 175 C 63 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET IFX FET >80 - 100V 1,000库存量
最低: 1
倍数: 1
卷轴: 1,000

Si SMD/SMT P-Channel 1 Channel 100 V 13.8 A 185 mOhms - 20 V, 20 V 4 V 36 nC - 55 C + 175 C 83 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET Small Signal MOSFET, -60 V 25,486库存量
最低: 1
倍数: 1
卷轴: 3,000

Si SMD/SMT P-Channel 1 Channel 60 V 290 mA 5.5 Ohms 20 V 2 V 290 pC - 55 C + 150 C 960 mW Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET Small Signal MOSFET, -60 V 2,417库存量
最低: 1
倍数: 1
卷轴: 3,000

Si SMD/SMT P-Channel 1 Channel 60 V 3.2 A 260 mOhms 20 V 4 V 10.8 nC - 55 C + 150 C 5 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET Small Signal MOSFET, -60 V 2,462库存量
最低: 1
倍数: 1
卷轴: 3,000

Si SMD/SMT P-Channel 1 Channel 60 V 3.2 A 250 mOhms 20 V 2 V 6.7 nC - 55 C + 150 C 5 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET Small Signal MOSFET, -60 V 9,028库存量
最低: 1
倍数: 1
卷轴: 3,000

Si SMD/SMT P-Channel 1 Channel 60 V 550 mA 1.7 Ohms 20 V 2 V 870 pC - 55 C + 150 C 1.04 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET SMALL SIGNAL MOSFETS 1,643库存量
最低: 1
倍数: 1
卷轴: 1,000

Si SMD/SMT SOT-223-4 P-Channel 1 Channel 60 V 3.9 A 67 mOhms - 20 V, 20 V 4 V 48 nC - 55 C + 150 C 5 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET SMALL SIGNAL MOSFETS 337库存量
最低: 1
倍数: 1
卷轴: 1,000

Si SMD/SMT SOT-223-4 P-Channel 1 Channel 60 V 6.4 A 67 mOhms - 20 V, 20 V 4 V 48 nC - 55 C + 150 C 5 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET P-Channel 812库存量
最低: 1
倍数: 1
卷轴: 1,000

Si SMD/SMT D2PAK-3 (TO-263-3) P-Channel 1 Channel 60 V 100 A 11 mOhms - 20 V, 20 V 1 V 281 nC - 55 C + 175 C 300 W Enhancement Reel, Cut Tape, MouseReel


Infineon Technologies MOSFET IFX FET >100-150V 2,202库存量
1,000预期 2026/3/6
最低: 1
倍数: 1
卷轴: 1,000

Si SMD/SMT P-Channel 1 Channel 150 V 41 A 72 mOhms - 20 V, 20 V 2 V 224 nC - 55 C + 175 C 300 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET SMALL SIGNAL MOSFETS 5,821库存量
最低: 1
倍数: 1
卷轴: 1,000

Si SMD/SMT SOT-223-4 P-Channel 1 Channel 60 V 2.8 A 125 mOhms - 20 V, 20 V 2.1 V 20.2 nC - 55 C + 150 C 4.2 W Enhancement Reel, Cut Tape, MouseReel


Infineon Technologies MOSFET IFX FET >80 - 100V 807库存量
最低: 1
倍数: 1
卷轴: 1,000

Si SMD/SMT P-Channel 1 Channel 100 V 62 A 33 mOhms - 20 V, 20 V 4 V 189 nC - 55 C + 175 C 300 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET IFX FET >80 - 100V 974库存量
最低: 1
倍数: 1

Si Through Hole P-Channel 1 Channel 100 V 62 A 33 mOhms - 20 V, 20 V 4 V 189 nC - 55 C + 175 C 300 W Enhancement Tube
Infineon Technologies MOSFET SMALL SIGNAL MOSFETS 3,935库存量
最低: 1
倍数: 1
卷轴: 1,000

Si SMD/SMT P-Channel 1 Channel 150 V 1.29 A 1.38 Ohms - 20 V, 20 V 2 V 11.6 nC - 55 C + 150 C 5 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET IFX FET >80 - 100V 792库存量
最低: 1
倍数: 1
卷轴: 2,500

Si SMD/SMT P-Channel 1 Channel 100 V 13.9 A 178 mOhms - 20 V, 20 V 2 V 42 nC - 55 C + 175 C 83 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET IFX FET > 60-80V 2,041库存量
最低: 1
倍数: 1
卷轴: 2,500

Si SMD/SMT DPAK-3 (TO-252-3) P-Channel 1 Channel 60 V 6.5 A 250 mOhms - 20 V, 20 V 2.1 V 10.6 nC - 55 C + 175 C 28 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET IFX FET > 60-80V 1,769库存量
最低: 1
倍数: 1
卷轴: 2,500

Si SMD/SMT DPAK-3 (TO-252-3) P-Channel 1 Channel 60 V 22 A 65 mOhms - 20 V, 20 V 2.1 V 39 nC - 55 C + 175 C 83 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET SMALL SIGNAL MOSFETS 1,606库存量
最低: 1
倍数: 1
卷轴: 1,000

Si SMD/SMT P-Channel 1 Channel 100 V 3.9 A 160 Ohms - 20 V, 20 V 2 V 42 nC - 55 C + 150 C 5 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET SMALL SIGNAL MOSFETS 8,052库存量
最低: 1
倍数: 1
卷轴: 1,000

Si SMD/SMT SOT-223-4 P-Channel 1 Channel 60 V 1.1 A 750 mOhms - 20 V, 20 V 1 V 4 nC - 55 C + 150 C 4.2 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET SMALL SIGNAL MOSFETS 1,145库存量
3,000预期 2026/3/6
最低: 1
倍数: 1
卷轴: 1,000

Si SMD/SMT P-Channel 1 Channel 100 V 1.55 A 980 Ohms - 20 V, 20 V 2 V 7.2 nC - 55 C + 150 C 5 W Enhancement Reel, Cut Tape, MouseReel