StrongIRFET™ 2功率MOSFET

英飞凌科技StrongIRFET™ 2功率MOSFET是N沟道、正常电平、100%经过雪崩测试的MOSFET。英飞凌StrongIRFET 2 MOSFET优化用于各种应用。这些MOSFET具有80V至100V的VDS 范围和2.4mΩ至8.2mΩ的RDS(on) 范围。

结果: 74
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 技术 安装风格 封装 / 箱体 晶体管极性 通道数量 Vds-漏源极击穿电压 Id-连续漏极电流 Rds On-漏源导通电阻 Vgs - 栅极-源极电压 Vgs th-栅源极阈值电压 Qg-栅极电荷 最小工作温度 最大工作温度 Pd-功率耗散 通道模式 商标名 封装
Infineon Technologies MOSFET IFX FET 60V 1,278库存量
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 60 V 194 A 1.6 mOhms - 20 V, 20 V 2.1 V 155 nC - 55 C + 175 C 250 W Enhancement Tube
Infineon Technologies MOSFET IFX FET >80 - 100V 955库存量
最低: 1
倍数: 1
卷轴: 800

Si SMD/SMT TO-263-7 N-Channel 1 Channel 100 V 117 A 5.05 mOhms - 20 V, 20 V 2.2 V 51 nC - 55 C + 175 C 150 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET MOSFET N-CH 40V 240A D2PAK-7 5,997库存量
最低: 1
倍数: 1
卷轴: 800

Si SMD/SMT TO-263-7 N-Channel 1 Channel 40 V 240 A 1 mOhms - 20 V, 20 V 3 V 210 nC - 55 C + 150 C 245 W Enhancement StrongIRFET Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET IFX FET >80 - 100V 959库存量
最低: 1
倍数: 1
卷轴: 800

Si SMD/SMT TO-263-7 N-Channel 1 Channel 100 V 139 A 4.25 mOhms - 20 V, 20 V 2.2 V 57 nC - 55 C + 175 C 167 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET IFX FET > 60-80V 1,401库存量
最低: 1
倍数: 1
卷轴: 2,000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 80 V 98 A 5.5 mOhms - 20 V, 20 V 2.2 V 36 nC - 55 C + 175 C 107 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET IFX FET > 60-80V 659库存量
最低: 1
倍数: 1
卷轴: 800

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 80 V 107 A 4 mOhms - 20 V, 20 V 2.2 V 54 nC - 55 C + 175 C 150 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET IFX FET >80 - 100V 1,224库存量
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 100 V 110 A 5 mOhms - 20 V, 20 V 3.8 V 51 nC - 55 C + 175 C 150 W Enhancement Tube
Infineon Technologies MOSFET IFX FET > 60-80V 505库存量
最低: 1
倍数: 1
卷轴: 800

Si SMD/SMT TO-263-7 N-Channel 1 Channel 80 V 259 A 1.7 mOhms - 20 V, 20 V 2.2 V 124 nC - 55 C + 175 C 250 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET StrongIRFET 2 Power -Transistor, 30 V in DPAK 636库存量
最低: 1
倍数: 1
卷轴: 800

Si SMD/SMT TO-263-3 N-Channel 1 Channel 30 V 122 A 2.05 mOhms - 20 V, 20 V 2.35 V 33 nC - 55 C + 175 C 136 W Enhancement StrongIRFET Reel, Cut Tape
Infineon Technologies MOSFET IFX FET > 60-80V 768库存量
最低: 1
倍数: 1
卷轴: 800

Si SMD/SMT TO-263-7 N-Channel 1 Channel 80 V 126 A 3.9 mOhms - 20 V, 20 V 2.2 V 54 nC - 55 C + 175 C 150 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET StrongIRFET 2 Power -Transistor, 30 V in DPAK 624库存量
最低: 1
倍数: 1
卷轴: 800

Si SMD/SMT TO-263-3 N-Channel 1 Channel 30 V 125 A 1.8 mOhms - 20 V, 20 V 2.35 V 46 nC - 55 C + 175 C 167 W Enhancement StrongIRFET Reel, Cut Tape
Infineon Technologies MOSFET StrongIRFET 2 Power -Transistor, 30 V in DPAK 399库存量
最低: 1
倍数: 1
卷轴: 800

Si SMD/SMT TO-263-3 N-Channel 1 Channel 30 V 119 A 2.35 mOhms - 20 V, 20 V 2.35 V 24 nC - 55 C + 175 C 107 W Enhancement StrongIRFET Reel, Cut Tape
Infineon Technologies MOSFET Addresses a broad range of applications from low- to high-switching frequency 3,890库存量
最低: 1
倍数: 1
卷轴: 2,000

Si SMD/SMT TO-252-3 N-Channel 1 Channel 30 V 137 A 2.35 mOhms - 20 V, 20 V 2.35 V 24 nC - 55 C + 175 C 107 W Enhancement StrongIRFET Reel, Cut Tape
Infineon Technologies MOSFET IR FET UP TO 60V 3,908库存量
最低: 1
倍数: 1

Si Through Hole N-Channel 1 Channel 30 V 121 A 2.35 mOhms - 20 V, 20 V 2.35 V 50 nC - 55 C + 175 C 107 W Enhancement StrongIRFET Tube
Infineon Technologies MOSFET IR FET UP TO 60V 3,850库存量
最低: 1
倍数: 1

Si Through Hole N-Channel 1 Channel 30 V 78 A 3.3 mOhms - 20 V, 20 V 2.35 V 3 nC - 55 C + 175 C 83 W Enhancement StrongIRFET Tube
Infineon Technologies MOSFET IFX FET >80 - 100V 873库存量
1,800预期 2026/4/2
最低: 1
倍数: 1
卷轴: 1,800

Si SMD/SMT HSOF-8 N-Channel 1 Channel 100 V 315 A 1.5 mOhms - 20 V, 20 V 2.2 V 161 nC - 55 C + 175 C 300 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET IFX FET 60V 3,702库存量
最低: 1
倍数: 1
卷轴: 2,000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 60 V 120 A 3.85 mOhms - 20 V, 20 V 2.1 V 45 nC - 55 C + 175 C 107 W Enhancement StrongIRFET Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET IFX FET 40V 1,622库存量
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 40 V 201 A 1.15 mOhms - 20 V, 20 V 3.4 V 210 nC - 55 C + 175 C 375 W Enhancement Tube
Infineon Technologies MOSFET IFX FET 40V 1,714库存量
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 40 V 193 A 1.5 mOhms - 20 V, 20 V 3.4 V 106 nC - 55 C + 175 C 188 W Enhancement Tube
Infineon Technologies MOSFET IFX FET > 60-80V 2,068库存量
最低: 1
倍数: 1
卷轴: 1,800

Si SMD/SMT HSOF-8 N-Channel 1 Channel 80 V 351 A 1.23 mOhms - 20 V, 20 V 2.2 V 170 nC - 55 C + 175 C 300 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET IFX FET >80 - 100V 2,280库存量
最低: 1
倍数: 1
卷轴: 1,800

Si SMD/SMT HSOF-8 N-Channel 1 Channel 100 V 294 A 1.75 mOhms - 20 V, 20 V 2.2 V 130 nC - 55 C + 175 C 300 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET IFX FET >80 - 100V 1,730库存量
最低: 1
倍数: 1
卷轴: 1,800

Si SMD/SMT HSOF-8 N-Channel 1 Channel 100 V 236 A 2.25 mOhms - 20 V, 20 V 2.2 V 103 nC - 55 C + 175 C 250 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET IFX FET 60V 4,886库存量
4,000预期 2026/3/26
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 60 V 185 A 1.9 mOhms - 20 V, 20 V 2.1 V 108 nC - 55 C + 175 C 188 W Enhancement Tube
Infineon Technologies MOSFET Addresses a broad range of applications from low- to high-switching frequency 1,294库存量
最低: 1
倍数: 1
卷轴: 2,000

Si SMD/SMT TO-252-3 N-Channel 1 Channel 30 V 143 A 2.05 mOhms - 20 V, 20 V 2.35 V 33 nC - 55 C + 175 C 136 W Enhancement StrongIRFET Reel, Cut Tape
Infineon Technologies MOSFET Addresses a broad range of applications from low- to high-switching frequency 3,734库存量
最低: 1
倍数: 1
卷轴: 2,000

Si SMD/SMT TO-252-3 N-Channel 1 Channel 30 V 99 A 3.05 mOhms - 20 V, 20 V 2.35 V 16 nC - 55 C + 175 C 83 W Enhancement StrongIRFET Reel, Cut Tape