|
|
GaN 场效应晶体管 CoolGaN Transistor 80 V G3 in PQFN 3x5, 1.8 mohm
- IGC025S08S1XTMA1
- Infineon Technologies
-
1:
¥38.0471
-
9,101库存量
-
新产品
|
Mouser 零件编号
726-IGC025S08S1XTMA1
新产品
|
Infineon Technologies
|
GaN 场效应晶体管 CoolGaN Transistor 80 V G3 in PQFN 3x5, 1.8 mohm
|
|
9,101库存量
|
|
|
¥38.0471
|
|
|
¥24.069
|
|
|
¥17.6958
|
|
|
¥15.142
|
|
|
¥14.6448
|
|
|
¥12.3283
|
|
最低： 1
倍数： 1
:
5,000
|
|
|
SMD/SMT
|
|
|
1 Channel
|
80 V
|
86 A
|
2.5 mOhms
|
6.5 V
|
2.9 V
|
12 nC
|
- 40 C
|
+ 150 C
|
45 W
|
Enhancement
|
CoolGaN
|
|
|
|
GaN 场效应晶体管 MV GAN DISCRETES
- IGC033S10S1XTMA1
- Infineon Technologies
-
1:
¥37.6403
-
9,960库存量
-
新产品
|
Mouser 零件编号
726-IGC033S10S1XTMA1
新产品
|
Infineon Technologies
|
GaN 场效应晶体管 MV GAN DISCRETES
|
|
9,960库存量
|
|
|
¥37.6403
|
|
|
¥24.069
|
|
|
¥17.6958
|
|
|
¥15.142
|
|
|
¥14.6448
|
|
|
¥12.3283
|
|
最低： 1
倍数： 1
:
5,000
|
|
|
SMD/SMT
|
PG-TSON-6
|
HEMT
|
1 Channel
|
100 V
|
76 A
|
3.3 mOhms
|
- 4 V, + 5.5 V
|
2.9 V
|
11 nC
|
- 40 C
|
+ 150 C
|
45 W
|
Enhancement
|
CoolGaN
|
|
|
|
GaN 场效应晶体管 CoolGaN Transistor 100 V G3 in PQFN 3x3, 5 mohm
- IGB070S10S1XTMA1
- Infineon Technologies
-
1:
¥27.798
-
3,526库存量
-
新产品
|
Mouser 零件编号
726-IGB070S10S1XTMA1
新产品
|
Infineon Technologies
|
GaN 场效应晶体管 CoolGaN Transistor 100 V G3 in PQFN 3x3, 5 mohm
|
|
3,526库存量
|
|
|
¥27.798
|
|
|
¥17.6167
|
|
|
¥12.5769
|
|
|
¥10.2604
|
|
|
查看
|
|
|
¥8.1134
|
|
|
¥10.0118
|
|
|
¥9.5937
|
|
|
¥8.1134
|
|
最低： 1
倍数： 1
:
5,000
|
|
|
SMD/SMT
|
|
|
1 Channel
|
100 V
|
38 A
|
7 mOhms
|
6.5 V
|
2.9 V
|
6.1 nC
|
- 40 C
|
+ 150 C
|
23 W
|
Enhancement
|
CoolGaN
|
|
|
|
GaN 场效应晶体管 CoolGaN Transistor 100 V G3 in PQFN 3x3, 9.4 mohm
- IGB110S10S1XTMA1
- Infineon Technologies
-
1:
¥18.532
-
2,724库存量
-
新产品
|
Mouser 零件编号
726-IGB110S10S1XTMA1
新产品
|
Infineon Technologies
|
GaN 场效应晶体管 CoolGaN Transistor 100 V G3 in PQFN 3x3, 9.4 mohm
|
|
2,724库存量
|
|
|
¥18.532
|
|
|
¥11.4921
|
|
|
¥8.1925
|
|
|
¥6.8365
|
|
|
¥5.3901
|
|
|
查看
|
|
|
¥6.2602
|
|
|
¥6.1585
|
|
|
¥5.1076
|
|
最低： 1
倍数： 1
:
5,000
|
|
|
SMD/SMT
|
|
|
1 Channel
|
100 V
|
23 A
|
11 mOhms
|
6.5 V
|
2.9 V
|
3.4 nC
|
- 40 C
|
+ 150 C
|
15 W
|
Enhancement
|
CoolGaN
|
|
|
|
GaN 场效应晶体管 CoolGaN Transistor 60 V G3 in PQFN 3x5, 1.3 mohm
- IGC019S06S1XTMA1
- Infineon Technologies
-
1:
¥38.0471
-
3,024库存量
-
新产品
|
Mouser 零件编号
726-IGC019S06S1XTMA1
新产品
|
Infineon Technologies
|
GaN 场效应晶体管 CoolGaN Transistor 60 V G3 in PQFN 3x5, 1.3 mohm
|
|
3,024库存量
|
|
|
¥38.0471
|
|
|
¥24.069
|
|
|
¥17.6958
|
|
|
¥15.142
|
|
|
¥14.1476
|
|
|
¥12.3283
|
|
最低： 1
倍数： 1
:
5,000
|
|
|
SMD/SMT
|
|
|
1 Channel
|
60 V
|
99 A
|
1.9 mOhms
|
6.5 V
|
2.9 V
|
13 nC
|
- 40 C
|
+ 150 C
|
45 W
|
Enhancement
|
CoolGaN
|
|
|
|
GaN 场效应晶体管 MV GAN DISCRETES
- IGC033S101XTMA1
- Infineon Technologies
-
1:
¥38.0471
-
3,677库存量
-
新产品
|
Mouser 零件编号
726-IGC033S101XTMA1
新产品
|
Infineon Technologies
|
GaN 场效应晶体管 MV GAN DISCRETES
|
|
3,677库存量
|
|
|
¥38.0471
|
|
|
¥24.5662
|
|
|
¥17.6958
|
|
|
¥15.142
|
|
|
¥14.1476
|
|
|
¥12.3283
|
|
最低： 1
倍数： 1
:
5,000
|
|
|
SMD/SMT
|
PG-VSON-6
|
HEMT
|
1 Channel
|
100 V
|
76 A
|
3.3 mOhms
|
- 4 V, + 5.5 V
|
2.9 V
|
11 nC
|
- 40 C
|
+ 150 C
|
45 W
|
Enhancement
|
CoolGaN
|
|
|
|
GaN 场效应晶体管 CoolGaN Transistor 120 V G3 in PQFN 3x5, 2.7 mohm
- IGC037S12S1XTMA1
- Infineon Technologies
-
1:
¥37.6403
-
3,270库存量
-
10,000在途量
-
新产品
|
Mouser 零件编号
726-IGC037S12S1XTMA1
新产品
|
Infineon Technologies
|
GaN 场效应晶体管 CoolGaN Transistor 120 V G3 in PQFN 3x5, 2.7 mohm
|
|
3,270库存量
10,000在途量
在途量:
5,000 预期 2026/7/9
5,000 预期 2026/7/23
|
|
|
¥37.6403
|
|
|
¥24.3176
|
|
|
¥17.6958
|
|
|
¥15.142
|
|
|
¥14.1476
|
|
|
¥12.3283
|
|
最低： 1
倍数： 1
:
5,000
|
|
|
SMD/SMT
|
|
|
1 Channel
|
120 V
|
71 A
|
3.7 mOhms
|
6.5 V
|
2.9 V
|
13 nC
|
- 40 C
|
+ 150 C
|
45 W
|
Enhancement
|
CoolGaN
|
|
|
|
GaN 场效应晶体管 MV GAN DISCRETES
- IGB110S101XTMA1
- Infineon Technologies
-
1:
¥19.9332
-
1,915库存量
-
新产品
|
Mouser 零件编号
726-IGB110S101XTMA1
新产品
|
Infineon Technologies
|
GaN 场效应晶体管 MV GAN DISCRETES
|
|
1,915库存量
|
|
|
¥19.9332
|
|
|
¥12.3283
|
|
|
¥8.5993
|
|
|
¥6.9382
|
|
|
¥5.3901
|
|
|
查看
|
|
|
¥6.2602
|
|
|
¥6.1585
|
|
|
¥5.1076
|
|
最低： 1
倍数： 1
:
5,000
|
|
|
SMD/SMT
|
PG-VSON-4
|
HEMT
|
1 Channel
|
100 V
|
23 A
|
|
- 4 V, + 5.5 V
|
2.9 V
|
3.4 nC
|
- 40 C
|
+ 150 C
|
15 W
|
Enhancement
|
CoolGaN
|
|
