|
|
GaN 场效应晶体管 700 V, 106 mOhm typ., 17 A, e-mode PowerGaN transistor
- SGT140R70ILB
- STMicroelectronics
-
1:
¥41.9343
-
637库存量
-
新产品
|
Mouser 零件编号
511-SGT140R70ILB
新产品
|
STMicroelectronics
|
GaN 场效应晶体管 700 V, 106 mOhm typ., 17 A, e-mode PowerGaN transistor
|
|
637库存量
|
|
|
¥41.9343
|
|
|
¥29.945
|
|
|
¥22.4983
|
|
|
¥21.6734
|
|
|
查看
|
|
|
¥15.5488
|
|
|
¥18.3625
|
|
|
¥15.5488
|
|
|
报价
|
|
最低: 1
倍数: 1
:
3,000
|
|
|
SMD/SMT
|
PowerFLAT-8
|
|
|
700 V
|
17 A
|
140 mOhms
|
- 6 V, + 7 V
|
2.5 V
|
3.5 nC
|
- 55 C
|
+ 150 C
|
113 W
|
Enhancement
|
|
|
|
|
|
GaN 场效应晶体管 GaN FET, 700V, 132m, DPAK
- NTD170N70GN1TXG
- onsemi
-
1:
¥19.0292
-
2,490库存量
-
新产品
|
Mouser 零件编号
863-NTD170N70GN1TXG
新产品
|
onsemi
|
GaN 场效应晶体管 GaN FET, 700V, 132m, DPAK
|
|
2,490库存量
|
|
|
¥19.0292
|
|
|
¥11.9102
|
|
|
¥7.8422
|
|
|
¥7.8422
|
|
|
¥6.215
|
|
|
查看
|
|
|
¥5.5257
|
|
|
¥5.0511
|
|
|
¥4.859
|
|
|
¥4.6782
|
|
最低: 1
倍数: 1
:
250
|
|
|
SMD/SMT
|
PDSO-E3
|
N-Channel
|
1 Channel
|
700 V
|
12 A
|
170 mOhms
|
- 6 V, + 7 V
|
2.5 V
|
2.1 nC
|
- 55 C
|
+ 150 C
|
64 W
|
Enhancement
|
|
GaNEXUS
|
|
|
|
GaN 场效应晶体管 GAN140-650EBE/SOT8074/DFN8080-
- GAN140-650EBEZ
- Nexperia
-
1:
¥62.7828
-
1,908库存量
|
Mouser 零件编号
771-GAN140-650EBEZ
|
Nexperia
|
GaN 场效应晶体管 GAN140-650EBE/SOT8074/DFN8080-
|
|
1,908库存量
|
|
|
¥62.7828
|
|
|
¥41.9343
|
|
|
¥30.849
|
|
|
¥27.5494
|
|
|
查看
|
|
|
¥18.4416
|
|
|
¥25.1425
|
|
|
¥18.4416
|
|
|
报价
|
|
最低: 1
倍数: 1
:
2,500
|
|
|
SMD/SMT
|
DFN-8080-8
|
N-Channel
|
1 Channel
|
650 V
|
17 A
|
140 mOhms
|
|
|
1.2 nC
|
- 55 C
|
+ 150 C
|
113 W
|
Enhancement
|
|
|
|
|
|
GaN 场效应晶体管 750W, 65V, Pre-matched, 1.2-1.4GHz, Earl
- QPD1028
- Qorvo
-
1:
¥12,938.2288
-
11库存量
|
Mouser 零件编号
772-QPD1028
|
Qorvo
|
GaN 场效应晶体管 750W, 65V, Pre-matched, 1.2-1.4GHz, Earl
|
|
11库存量
|
|
|
¥12,938.2288
|
|
|
报价
|
|
|
报价
|
|
最低: 1
倍数: 1
|
|
|
SMD/SMT
|
NI-780
|
|
|
65 V
|
19 A
|
|
|
|
|
- 40 C
|
+ 85 C
|
400 W
|
|
|
|
|
|
|
GaN 场效应晶体管 GaN HEMT Die DC-6.0GHz, 8 Watt
- CGH60008D-GP4
- MACOM
-
10:
¥257.1767
-
600库存量
|
Mouser 零件编号
941-CGH60008D
|
MACOM
|
GaN 场效应晶体管 GaN HEMT Die DC-6.0GHz, 8 Watt
|
|
600库存量
|
|
|
¥257.1767
|
|
|
¥256.9168
|
|
|
查看
|
|
|
报价
|
|
最低: 10
倍数: 10
|
|
|
SMD/SMT
|
Die
|
N-Channel
|
|
120 V
|
750 mA
|
1.6 Ohms
|
|
- 3 V
|
|
|
|
|
|
|
|
|
|
|
GaN 场效应晶体管 GaN HEMT
- CGHV40180F
- MACOM
-
1:
¥4,445.6799
-
309库存量
|
Mouser 零件编号
941-CGHV40180F
|
MACOM
|
GaN 场效应晶体管 GaN HEMT
|
|
309库存量
|
|
|
¥4,445.6799
|
|
|
¥3,858.3963
|
|
最低: 1
倍数: 1
|
|
|
Screw Mount
|
440223
|
N-Channel
|
|
125 V
|
18 A
|
|
|
- 3.8 V
|
|
- 40 C
|
+ 150 C
|
150 W
|
|
|
|
|
|
|
GaN 场效应晶体管 Unmatched Discrete GaN-on-SiC HEMT 30W PSAT at 50V or 19W PSAT at 28V
- GRF0020
- Guerrilla RF
-
1:
¥1,312.5402
-
27库存量
-
新产品
|
Mouser 零件编号
459-GRF0020
新产品
|
Guerrilla RF
|
GaN 场效应晶体管 Unmatched Discrete GaN-on-SiC HEMT 30W PSAT at 50V or 19W PSAT at 28V
|
|
27库存量
|
|
|
¥1,312.5402
|
|
|
¥1,246.6951
|
|
|
¥1,246.6951
|
|
|
查看
|
|
|
报价
|
|
最低: 1
倍数: 1
:
50
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
GaN 场效应晶体管 DC-2.7 GHz, 150W, 65V GaN RF Tr
- QPD1013
- Qorvo
-
1:
¥2,297.9341
-
9库存量
-
100预期 2026/11/11
|
Mouser 零件编号
772-QPD1013
|
Qorvo
|
GaN 场效应晶体管 DC-2.7 GHz, 150W, 65V GaN RF Tr
|
|
9库存量
100预期 2026/11/11
|
|
|
¥2,297.9341
|
|
|
¥2,085.0534
|
|
|
¥1,547.0943
|
|
|
¥1,547.0943
|
|
最低: 1
倍数: 1
:
100
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
GaN 场效应晶体管 DC-3.7GHz 65W 50V SSG 20dB GaN
- QPD1015
- Qorvo
-
1:
¥2,676.4276
-
21库存量
|
Mouser 零件编号
772-QPD1015
|
Qorvo
|
GaN 场效应晶体管 DC-3.7GHz 65W 50V SSG 20dB GaN
|
|
21库存量
|
|
|
¥2,676.4276
|
|
|
¥2,676.1677
|
|
|
¥2,051.6958
|
|
最低: 1
倍数: 1
|
|
|
SMD/SMT
|
NI-360
|
N-Channel
|
|
50 V
|
2.5 A
|
|
|
- 2.8 V
|
|
- 40 C
|
+ 85 C
|
64 W
|
|
|
|
|
|
|
GaN 场效应晶体管 DC-6.0GHz 18 Watt 28V GaN
- T2G6001528-Q3
- Qorvo
-
1:
¥1,669.8123
-
123库存量
|
Mouser 零件编号
772-T2G6001528-Q3
|
Qorvo
|
GaN 场效应晶体管 DC-6.0GHz 18 Watt 28V GaN
|
|
123库存量
|
|
|
¥1,669.8123
|
|
|
¥1,653.3143
|
|
|
¥1,132.2939
|
|
最低: 1
倍数: 1
|
|
|
|
NI-200
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
GaN 场效应晶体管 0.03-4.0 GHz, 30W, 32V GaN RF Tr
- TGF3021-SM
- Qorvo
-
1:
¥1,622.567
-
29库存量
|
Mouser 零件编号
772-TGF3021-SM
|
Qorvo
|
GaN 场效应晶体管 0.03-4.0 GHz, 30W, 32V GaN RF Tr
|
|
29库存量
|
|
|
¥1,622.567
|
|
|
¥1,606.5775
|
|
|
¥1,581.5706
|
|
最低: 1
倍数: 1
|
|
|
SMD/SMT
|
QFN-20
|
|
|
32 V
|
1.8 A
|
|
|
|
|
|
|
|
|
|
|
|
|
|
GaN 场效应晶体管 650V, 50mohm GaN FET in TO247-3L
- TP65H050G4WS
- Renesas Electronics
-
1:
¥81.0662
-
608库存量
|
Mouser 零件编号
227-TP65H050G4WS
|
Renesas Electronics
|
GaN 场效应晶体管 650V, 50mohm GaN FET in TO247-3L
|
|
608库存量
|
|
|
¥81.0662
|
|
|
¥47.1436
|
|
|
¥42.1829
|
|
|
¥41.358
|
|
|
报价
|
|
|
报价
|
|
最低: 1
倍数: 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
34 A
|
60 mOhms
|
- 20 V, + 20 V
|
4.8 V
|
24 nC
|
- 55 C
|
+ 150 C
|
119 W
|
Enhancement
|
|
|
|
|
|
GaN 场效应晶体管 GaN HEMT Die DC-8.0GHz, 30 Watt
- CG2H80030D-GP4
- MACOM
-
10:
¥1,050.9904
-
30库存量
|
Mouser 零件编号
941-CG2H80030D
|
MACOM
|
GaN 场效应晶体管 GaN HEMT Die DC-8.0GHz, 30 Watt
|
|
30库存量
|
|
|
¥1,050.9904
|
|
|
¥1,031.6222
|
|
最低: 10
倍数: 10
|
|
|
SMD/SMT
|
Die
|
N-Channel
|
|
120 V
|
3 A
|
410 mOhms
|
|
- 3 V
|
|
|
+ 225 C
|
|
|
|
|
|
|
|
GaN 场效应晶体管 DC-1.7 GHz, 500W, 50V, GaN RF Tr
- QPD1016
- Qorvo
-
1:
¥8,785.1398
-
22库存量
|
Mouser 零件编号
772-QPD1016
|
Qorvo
|
GaN 场效应晶体管 DC-1.7 GHz, 500W, 50V, GaN RF Tr
|
|
22库存量
|
|
|
¥8,785.1398
|
|
|
¥8,698.2089
|
|
最低: 1
倍数: 1
|
|
|
SMD/SMT
|
NI780-2
|
N-Channel
|
|
145 V
|
70 A
|
|
|
|
|
- 40 C
|
+ 85 C
|
714 W
|
|
|
|
|
|
|
GaN 场效应晶体管 DC-18GHZ 12W TQGaN25 PAE 73.3% Gain 21dB
- TGF2023-2-02
- Qorvo
-
100:
¥446.7681
-
100库存量
|
Mouser 零件编号
772-TGF2023-2-02
|
Qorvo
|
GaN 场效应晶体管 DC-18GHZ 12W TQGaN25 PAE 73.3% Gain 21dB
|
|
100库存量
|
|
最低: 100
倍数: 100
|
|
|
|
Die
|
N-Channel
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
GaN 场效应晶体管 4-6GHz 5W 32Volt P3dB 38.4 dBm GaN
- TGF3020-SM
- Qorvo
-
1:
¥646.1792
-
40库存量
|
Mouser 零件编号
772-TGF3020-SM
|
Qorvo
|
GaN 场效应晶体管 4-6GHz 5W 32Volt P3dB 38.4 dBm GaN
|
|
40库存量
|
|
最低: 1
倍数: 1
|
|
|
SMD/SMT
|
QFN-16
|
|
|
32 V
|
250 mA
|
|
|
|
|
- 40 C
|
+ 85 C
|
|
|
|
|
|
|
|
GaN 场效应晶体管 1-1.5 GHz, 300W, NI-650
- QPD2560L
- Qorvo
-
1:
¥6,775.6495
-
4库存量
-
新产品
|
Mouser 零件编号
772-QPD2560L
新产品
|
Qorvo
|
GaN 场效应晶体管 1-1.5 GHz, 300W, NI-650
|
|
4库存量
|
|
|
¥6,775.6495
|
|
|
¥6,708.6066
|
|
最低: 1
倍数: 1
|
|
|
|
NI-650
|
|
|
|
33 A
|
|
- 2.8 V
|
|
|
- 40 C
|
+ 85 C
|
285 W
|
|
|
|
|
|
|
GaN 场效应晶体管 GaN FET, 700V, 75m, DPAK
- NTD100N70GN1TXG
- onsemi
-
1:
¥23.8204
-
2,500库存量
-
新产品
|
Mouser 零件编号
863-NTD100N70GN1TXG
新产品
|
onsemi
|
GaN 场效应晶体管 GaN FET, 700V, 75m, DPAK
|
|
2,500库存量
|
|
|
¥23.8204
|
|
|
¥15.3002
|
|
|
¥10.4186
|
|
|
¥10.4186
|
|
|
¥8.7688
|
|
|
查看
|
|
|
¥7.797
|
|
|
¥7.3676
|
|
|
¥6.9947
|
|
最低: 1
倍数: 1
:
250
|
|
|
SMD/SMT
|
DPAK-3
|
N-Channel
|
1 Channel
|
700 V
|
21 A
|
100 mOhms
|
- 6 V, + 7 V
|
2.5 V
|
3.8 nC
|
- 55 C
|
+ 150 C
|
105 W
|
Enhancement
|
|
GaNEXUS
|
|
|
|
GaN 场效应晶体管 LEGACY GAN SYSTEMS
- GS-065-011-2-L-TR
- Infineon Technologies
-
1:
¥52.8501
-
3,081库存量
-
寿命结束
|
Mouser 零件编号
499-GS-065-011-2-LTR
寿命结束
|
Infineon Technologies
|
GaN 场效应晶体管 LEGACY GAN SYSTEMS
|
|
3,081库存量
|
|
|
¥52.8501
|
|
|
¥34.6571
|
|
|
¥25.4815
|
|
|
¥22.6678
|
|
|
查看
|
|
|
¥18.6902
|
|
|
¥20.0123
|
|
|
¥18.6902
|
|
|
报价
|
|
最低: 1
倍数: 1
:
3,000
|
|
|
SMD/SMT
|
PDFN-6
|
N-Channel
|
1 Channel
|
650 V
|
11 A
|
150 mOhms
|
- 10 V, + 7 V
|
1.5 V
|
2 nC
|
- 40 C
|
+ 150 C
|
|
Enhancement
|
|
|
|
|
|
GaN 场效应晶体管 DC-3.6GHz GaN 90W 48V
- QPD0060
- Qorvo
-
1:
¥1,134.5426
-
11库存量
-
100预期 2026/8/18
|
Mouser 零件编号
772-QPD0060
|
Qorvo
|
GaN 场效应晶体管 DC-3.6GHz GaN 90W 48V
|
|
11库存量
100预期 2026/8/18
|
|
|
¥1,134.5426
|
|
|
¥1,134.3731
|
|
|
¥794.1753
|
|
|
¥757.2582
|
|
|
查看
|
|
|
报价
|
|
最低: 1
倍数: 1
:
100
|
|
|
SMD/SMT
|
DFN-6
|
|
|
48 V
|
|
|
|
|
|
- 40 C
|
|
|
|
|
|
|
|
|
GaN 场效应晶体管 LEGACY GAN SYSTEMS
- GS-065-011-1-L-MR
- Infineon Technologies
-
1:
¥49.9573
-
2,537库存量
-
寿命结束
|
Mouser 零件编号
499-GS-065-011-1-L
寿命结束
|
Infineon Technologies
|
GaN 场效应晶体管 LEGACY GAN SYSTEMS
|
|
2,537库存量
|
|
|
¥49.9573
|
|
|
¥30.1032
|
|
|
¥20.4304
|
|
|
¥20.4304
|
|
|
¥18.9388
|
|
|
查看
|
|
|
¥17.3681
|
|
|
¥17.0404
|
|
|
¥16.7127
|
|
最低: 1
倍数: 1
:
250
|
|
|
SMD/SMT
|
PDFN-6
|
N-Channel
|
1 Channel
|
650 V
|
11 A
|
150 mOhms
|
- 10 V, + 7 V
|
1.5 V
|
2 nC
|
- 40 C
|
+ 150 C
|
|
Enhancement
|
|
|
|
|
|
GaN 场效应晶体管 LEGACY GAN SYSTEMS
- GS-065-011-1-L-TR
- Infineon Technologies
-
1:
¥46.8159
-
2,083库存量
-
寿命结束
|
Mouser 零件编号
499-GS-065-011-1-LTR
寿命结束
|
Infineon Technologies
|
GaN 场效应晶体管 LEGACY GAN SYSTEMS
|
|
2,083库存量
|
|
|
¥46.8159
|
|
|
¥33.0864
|
|
|
¥23.3232
|
|
|
¥21.6734
|
|
|
查看
|
|
|
¥17.6958
|
|
|
¥19.1874
|
|
|
¥17.6958
|
|
|
报价
|
|
最低: 1
倍数: 1
:
3,000
|
|
|
SMD/SMT
|
PDFN-6
|
N-Channel
|
1 Channel
|
650 V
|
11 A
|
150 mOhms
|
- 10 V, + 7 V
|
1.5 V
|
2 nC
|
- 40 C
|
+ 150 C
|
|
Enhancement
|
|
|
|
|
|
GaN 场效应晶体管 270W GaN HEMT 48V 2496 to 2690MHz
- GTVA262701FA-V2-R0
- MACOM
-
1:
¥1,784.1005
-
53库存量
|
Mouser 零件编号
941-GTVA262701FAV2R0
|
MACOM
|
GaN 场效应晶体管 270W GaN HEMT 48V 2496 to 2690MHz
|
|
53库存量
|
|
|
¥1,784.1005
|
|
|
¥1,506.5386
|
|
|
¥1,506.5386
|
|
|
查看
|
|
|
报价
|
|
最低: 1
倍数: 1
:
50
|
|
|
Screw Mount
|
H-87265J-2
|
N-Channel
|
|
125 V
|
12 A
|
|
|
|
|
|
+ 225 C
|
|
|
|
|
|
|
|
GaN 场效应晶体管 DC-6.0GHz 30 Watt 28V GaN Flangeless
- T2G6003028-FS
- Qorvo
-
1:
¥6,880.4005
-
15库存量
|
Mouser 零件编号
772-T2G6003028-FS
|
Qorvo
|
GaN 场效应晶体管 DC-6.0GHz 30 Watt 28V GaN Flangeless
|
|
15库存量
|
|
|
¥6,880.4005
|
|
|
¥6,812.318
|
|
最低: 1
倍数: 1
|
|
|
|
NI-200
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
GaN 场效应晶体管 GaN HEMT DC-6.0GHz, 30 Watt
- CGH27030S
- MACOM
-
1:
¥815.5436
-
168库存量
|
Mouser 零件编号
941-CGH27030S
|
MACOM
|
GaN 场效应晶体管 GaN HEMT DC-6.0GHz, 30 Watt
|
|
168库存量
|
|
|
¥815.5436
|
|
|
¥656.3379
|
|
|
¥594.2331
|
|
|
¥594.2331
|
|
|
查看
|
|
|
报价
|
|
最低: 1
倍数: 1
:
250
|
|
|
SMD/SMT
|
|
N-Channel
|
|
84 V
|
7 A
|
|
|
- 3.8 V
|
|
- 40 C
|
+ 150 C
|
21.6 W
|
|
|
|
|