碳化硅功率MOSFET

STMicroelectronics碳化硅功率MOSFET将宽禁带材料的先进性和可靠性引入到更广泛的节能应用中,如用于电动/混合动力汽车、太阳能或风力发电、高效驱动器、电源和智能电网设备的逆变器。从650V到1700V的扩展电压范围使其具有出色的开关性能,以及极低的单位面积导通电阻RDS(on)性能指标,从而实现了更高效、更紧凑的系统。ST的1200V SiC MOSFET具有200°C的高温度额定值,可改进电力电子系统的散热设计。与硅MOSFET相比,SiC MOSFET的开关损耗更低,且随温度的变化更小。

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选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS 产品类型 技术 安装风格 封装 / 箱体 晶体管极性
STMicroelectronics 碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A 252库存量
600预期 2026/11/16
最低: 1
倍数: 1
卷轴: 600

SiC MOSFETS
STMicroelectronics 碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 650 V 40 mOhm typ. 30 A 969库存量
最低: 1
倍数: 1
卷轴: 1,000

SiC MOSFETS SiC SMD/SMT N-Channel
STMicroelectronics MOSFET N-channel 40 V, 0.85 mOhm typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x 2,681库存量
最低: 1
倍数: 1
卷轴: 3,000

MOSFETs Si SMD/SMT PowerFLAT5x6-8 N-Channel
STMicroelectronics 碳化硅MOSFET Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac 2,329库存量
最低: 1
倍数: 1
卷轴: 3,000

SiC MOSFETS SiC SMD/SMT PowerFLAT-5 N-Channel
STMicroelectronics 碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 16 mOhm typ., 112 A in an H2PAK-7 package 922库存量
最低: 1
倍数: 1
卷轴: 1,000

SiC MOSFETS SiC SMD/SMT H2PAK-7 N-Channel
STMicroelectronics 碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mOhm typ., 110 A in an HU3PAK package 274库存量
600预期 2026/3/9
最低: 1
倍数: 1
卷轴: 600

SiC MOSFETS SiC SMD/SMT HU3PAK-7 N-Channel
STMicroelectronics 碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HU3PAK package 739库存量
最低: 1
倍数: 1
卷轴: 600

SiC MOSFETS SiC SMD/SMT HU3PAK-7 N-Channel


STMicroelectronics 碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package 513库存量
最低: 1
倍数: 1

SiC MOSFETS SiC Through Hole Hip247-4 N-Channel

STMicroelectronics 碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package 502库存量
最低: 1
倍数: 1

SiC MOSFETS SiC Through Hole HiP247-3 N-Channel
STMicroelectronics 碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an H2PAK-7 package 1,082库存量
最低: 1
倍数: 1
卷轴: 1,000

SiC MOSFETS SiC SMD/SMT H2PAK-7 N-Channel
STMicroelectronics 碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HU3PAK package 1,011库存量
600预期 2027/1/4
最低: 1
倍数: 1
卷轴: 600

SiC MOSFETS SiC SMD/SMT HU3PAK-7 N-Channel


STMicroelectronics 碳化硅MOSFET Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package 547库存量
最低: 1
倍数: 1

SiC MOSFETS SiC Through Hole HiP247-4 N-Channel


STMicroelectronics 碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package 641库存量
最低: 1
倍数: 1

SiC MOSFETS SiC Through Hole HiP247-4 N-Channel
STMicroelectronics 碳化硅MOSFET Silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in a TO-LL package 1,779库存量
最低: 1
倍数: 1
卷轴: 1,800

SiC MOSFETS SiC SMD/SMT TOLL-8 N-Channel
STMicroelectronics 碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package 14库存量
2,000预期 2026/10/12
最低: 1
倍数: 1
卷轴: 1,000

SiC MOSFETS SiC SMD/SMT H2PAK-7 N-Channel
STMicroelectronics 碳化硅MOSFET Silicon carbide Power MOSFET 650 V, 40 mOhm typ., 35 A in a TO-LL package 37库存量
最低: 1
倍数: 1
卷轴: 1,800

SiC MOSFETS SiC SMD/SMT TOLL-8 N-Channel


STMicroelectronics 碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package 425库存量
最低: 1
倍数: 1
卷轴: 1,000

SiC MOSFETS SiC SMD/SMT H2PAK-7 N-Channel


STMicroelectronics 碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package 202库存量
最低: 1
倍数: 1
卷轴: 1,000

SiC MOSFETS SiC SMD/SMT H2PAK-7 N-Channel


STMicroelectronics 碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package 552库存量
最低: 1
倍数: 1

SiC MOSFETS SiC Through Hole HiP-247-4 N-Channel


STMicroelectronics 碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A 353库存量
最低: 1
倍数: 1

SiC MOSFETS SiC Through Hole HiP-247-4 N-Channel


STMicroelectronics 碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A 698库存量
最低: 1
倍数: 1

SiC MOSFETS SiC Through Hole HiP-247-4 N-Channel


STMicroelectronics 碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package 629库存量
最低: 1
倍数: 1

SiC MOSFETS SiC Through Hole HiP-247-3 N-Channel


STMicroelectronics 碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package 483库存量
1,200预期 2026/4/20
最低: 1
倍数: 1

SiC MOSFETS SiC Through Hole HiP-247-4 N-Channel
STMicroelectronics 碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A 142库存量
最低: 1
倍数: 1
卷轴: 600

SiC MOSFETS SiC SMD/SMT H2PAK-2 N-Channel


STMicroelectronics 碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A 57库存量
最低: 1
倍数: 1

SiC MOSFETS SiC Through Hole HiP-247-4 N-Channel