|
|
差分放大器 DIE SALE Rail In RRO Diff Amp
- THS4521SKGD1
- Texas Instruments
-
324:
¥867.6931
-
648库存量
|
Mouser 零件编号
595-THS4521SKGD1
|
Texas Instruments
|
差分放大器 DIE SALE Rail In RRO Diff Amp
|
|
648库存量
|
|
|
¥867.6931
|
|
|
查看
|
|
|
报价
|
|
最低: 324
倍数: 324
|
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|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Narrow and Broad Band High Efficiency Amplifier, High Power Amplifier, and Oscillator Applications
- MWT-PH11F
- CML Micro
-
10:
¥1,037.4417
-
90库存量
|
Mouser 零件编号
938-MWT-PH11F
|
CML Micro
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Narrow and Broad Band High Efficiency Amplifier, High Power Amplifier, and Oscillator Applications
|
|
90库存量
|
|
|
¥1,037.4417
|
|
|
¥984.7272
|
|
|
¥984.2978
|
|
|
查看
|
|
|
报价
|
|
最低: 10
倍数: 10
|
|
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|
|
RF 开关 IC 50MHz-20GHz IL 1.2dB @20GHz
- MA4SW110
- MACOM
-
50:
¥81.3826
-
2,350库存量
|
Mouser 零件编号
937-MA4SW110
|
MACOM
|
RF 开关 IC 50MHz-20GHz IL 1.2dB @20GHz
|
|
2,350库存量
|
|
|
¥81.3826
|
|
|
¥71.7324
|
|
|
¥68.1729
|
|
|
¥63.8337
|
|
|
¥59.4945
|
|
最低: 50
倍数: 50
|
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GaN 场效应晶体管 GaN HEMT Die DC-6.0GHz, 8 Watt
- CGH60008D-GP4
- MACOM
-
10:
¥257.1767
-
680库存量
|
Mouser 零件编号
941-CGH60008D
|
MACOM
|
GaN 场效应晶体管 GaN HEMT Die DC-6.0GHz, 8 Watt
|
|
680库存量
|
|
|
¥257.1767
|
|
|
报价
|
|
|
报价
|
|
最低: 10
倍数: 10
|
|
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|
跨阻抗放大器 Programmable-gain di fferential-output h
- LMH32401YR
- Texas Instruments
-
1:
¥88.9988
-
2,784库存量
|
Mouser 零件编号
595-LMH32401YR
|
Texas Instruments
|
跨阻抗放大器 Programmable-gain di fferential-output h
|
|
2,784库存量
|
|
|
¥88.9988
|
|
|
¥69.5628
|
|
|
¥64.7716
|
|
|
¥59.3928
|
|
|
查看
|
|
|
¥52.5224
|
|
|
¥56.9068
|
|
|
¥55.3361
|
|
|
¥54.0931
|
|
|
¥52.5224
|
|
最低: 1
倍数: 1
:
3,000
|
|
|
|
|
NTC热敏电阻 NTC BARE DIE AG2 5K 1% TAPE E4
- NTCC201E4502FT-C
- Vishay / BC Components
-
50:
¥8.4411
-
500库存量
|
Mouser 零件编号
594-NTCC201E4502FT-C
|
Vishay / BC Components
|
NTC热敏电阻 NTC BARE DIE AG2 5K 1% TAPE E4
|
|
500库存量
|
|
|
¥8.4411
|
|
|
¥8.2716
|
|
|
¥7.2998
|
|
|
¥6.9947
|
|
|
¥6.4523
|
|
最低: 50
倍数: 50
|
|
|
|
|
射频混频器 24-34 GHz IRM DIE
- QPX0004D
- Qorvo
-
50:
¥535.7895
-
100库存量
|
Mouser 零件编号
772-QPX0004D
|
Qorvo
|
射频混频器 24-34 GHz IRM DIE
|
|
100库存量
|
|
最低: 50
倍数: 50
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Narrow and Broad Band High Efficiency Amplifier, High Power Amplifier, and Oscillator Applications
- MWT-PH8F
- CML Micro
-
10:
¥788.8756
-
100库存量
|
Mouser 零件编号
938-MWT-PH8F
|
CML Micro
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Narrow and Broad Band High Efficiency Amplifier, High Power Amplifier, and Oscillator Applications
|
|
100库存量
|
|
|
¥788.8756
|
|
|
¥788.7061
|
|
|
¥729.9009
|
|
|
查看
|
|
|
报价
|
|
最低: 10
倍数: 10
|
|
|
|
|
NTC热敏电阻 4.7Kohm 1% 3435K 1% Silver Term
- NTCC200E4472FT
- Vishay / BC Components
-
1:
¥9.0965
-
4,822库存量
|
Mouser 零件编号
594-NTCC200E4472FT
|
Vishay / BC Components
|
NTC热敏电阻 4.7Kohm 1% 3435K 1% Silver Term
|
|
4,822库存量
|
|
|
¥9.0965
|
|
|
¥8.6897
|
|
|
¥8.0908
|
|
|
¥7.7179
|
|
|
查看
|
|
|
¥4.7121
|
|
|
¥6.5314
|
|
|
¥6.5201
|
|
|
¥5.876
|
|
|
¥5.7856
|
|
|
¥4.7121
|
|
最低: 1
倍数: 1
:
2,000
|
|
|
|
|
衰减器 DC-30 GHz 2-bit Digital Attenuator
- CMD324
- Qorvo
-
100:
¥501.7426
-
100库存量
-
寿命结束
|
Mouser 零件编号
772-CMD324
寿命结束
|
Qorvo
|
衰减器 DC-30 GHz 2-bit Digital Attenuator
|
|
100库存量
|
|
|
¥501.7426
|
|
|
查看
|
|
|
报价
|
|
最低: 100
倍数: 100
|
|
|
|
|
RF 开关 IC 2-18GHz ISO 40dB IL 1.3dB @ 18GHz
MACOM MA4SW310B-1
- MA4SW310B-1
- MACOM
-
50:
¥478.894
-
50库存量
|
Mouser 零件编号
937-MA4SW310B-1
|
MACOM
|
RF 开关 IC 2-18GHz ISO 40dB IL 1.3dB @ 18GHz
|
|
50库存量
|
|
|
¥478.894
|
|
|
¥447.2879
|
|
|
报价
|
|
|
报价
|
|
最低: 50
倍数: 50
|
|
|
|
|
GaN 场效应晶体管 GaN HEMT Die DC-6.0GHz, 30 Watt
- CGH60030D-GP4
- MACOM
-
10:
¥1,175.2791
-
10库存量
|
Mouser 零件编号
941-CGH60030D
|
MACOM
|
GaN 场效应晶体管 GaN HEMT Die DC-6.0GHz, 30 Watt
|
|
10库存量
|
|
|
¥1,175.2791
|
|
|
查看
|
|
|
报价
|
|
最低: 10
倍数: 10
|
|
|
|
|
NTC热敏电阻 NTC BARE DIE AG2 20K 1% TAPE E4
- NTCC201E4203FT-C
- Vishay / BC Components
-
50:
¥8.1247
-
100库存量
|
Mouser 零件编号
594-NTCC201E4203FT-C
|
Vishay / BC Components
|
NTC热敏电阻 NTC BARE DIE AG2 20K 1% TAPE E4
|
|
100库存量
|
|
|
¥8.1247
|
|
|
¥6.9495
|
|
|
¥6.4071
|
|
|
¥5.8986
|
|
最低: 50
倍数: 50
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管
- MWT-PH33F
- CML Micro
-
10:
¥150.516
-
30库存量
|
Mouser 零件编号
938-MWT-PH33F
|
CML Micro
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管
|
|
30库存量
|
|
|
¥150.516
|
|
|
¥150.2561
|
|
|
¥123.6785
|
|
|
¥116.0397
|
|
|
查看
|
|
|
¥114.6385
|
|
|
报价
|
|
最低: 10
倍数: 10
|
|
|
|
|
衰减器 50ohm 6 Bit 31.5dB 0.5dB, 1.0dB Digital Step Attenuator, optional ext. Vss
- PE43508A-V
- pSemi
-
1:
¥648.4957
-
191库存量
|
Mouser 零件编号
81-PE43508A-V
|
pSemi
|
衰减器 50ohm 6 Bit 31.5dB 0.5dB, 1.0dB Digital Step Attenuator, optional ext. Vss
|
|
191库存量
|
|
|
¥648.4957
|
|
|
¥591.668
|
|
|
查看
|
|
|
报价
|
|
最低: 1
倍数: 1
:
250
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Low Noise pHEMT Devices
- MWT-LN300
- CML Micro
-
10:
¥263.855
-
50库存量
|
Mouser 零件编号
938-MWT-LN300
|
CML Micro
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Low Noise pHEMT Devices
|
|
50库存量
|
|
|
¥263.855
|
|
|
¥261.256
|
|
|
¥258.3067
|
|
最低: 10
倍数: 10
:
10
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Low Noise pHEMT Devices
- MWT-LN600
- CML Micro
-
10:
¥275.3132
-
100库存量
|
Mouser 零件编号
938-MWT-LN600
|
CML Micro
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Low Noise pHEMT Devices
|
|
100库存量
|
|
|
¥275.3132
|
|
|
¥269.2451
|
|
|
¥260.3746
|
|
最低: 10
倍数: 10
|
|
|
|
|
NTC热敏电阻 NTC BARE DIE AG2 4.7K 1% TAPE E4
- NTCC201E4472FT-C
- Vishay / BC Components
-
50:
¥8.4411
-
150库存量
|
Mouser 零件编号
594-NTCC201E4472FT-C
|
Vishay / BC Components
|
NTC热敏电阻 NTC BARE DIE AG2 4.7K 1% TAPE E4
|
|
150库存量
|
|
|
¥8.4411
|
|
|
¥8.2716
|
|
|
¥7.2998
|
|
|
¥6.9947
|
|
|
¥6.4523
|
|
最低: 50
倍数: 50
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Narrow and Broad Band High Efficiency Amplifier and Oscillator Applications
- MWT-PH9F
- CML Micro
-
10:
¥622.0311
-
100库存量
|
Mouser 零件编号
938-MWT-PH9F
|
CML Micro
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Narrow and Broad Band High Efficiency Amplifier and Oscillator Applications
|
|
100库存量
|
|
|
¥622.0311
|
|
|
¥620.031
|
|
|
¥606.5727
|
|
|
查看
|
|
|
报价
|
|
最低: 10
倍数: 10
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Narrow and Broad Band High Efficiency Amplifier and Oscillator Applications
- MWT-PH15F
- CML Micro
-
10:
¥952.0702
-
100库存量
|
Mouser 零件编号
938-MWT-PH15F
|
CML Micro
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Narrow and Broad Band High Efficiency Amplifier and Oscillator Applications
|
|
100库存量
|
|
|
¥952.0702
|
|
|
¥949.20
|
|
|
¥935.2219
|
|
|
查看
|
|
|
报价
|
|
最低: 10
倍数: 10
|
|
|
|
|
GaN 场效应晶体管 GaN HEMT Die DC-8.0GHz, 15 Watt
- CG2H80015D-GP4
- MACOM
-
10:
¥991.236
-
60库存量
|
Mouser 零件编号
941-CG2H80015D-GP4
|
MACOM
|
GaN 场效应晶体管 GaN HEMT Die DC-8.0GHz, 15 Watt
|
|
60库存量
|
|
|
¥991.236
|
|
|
¥902.7344
|
|
最低: 10
倍数: 10
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管
CML Micro MWT-PH27F71
- MWT-PH27F71
- CML Micro
-
1:
¥486.7136
-
3库存量
|
Mouser 零件编号
938-MWT-PH27F71
|
CML Micro
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管
|
|
3库存量
|
|
|
¥486.7136
|
|
|
¥486.7136
|
|
|
查看
|
|
|
报价
|
|
最低: 1
倍数: 1
:
10
|
|
|
|
|
GaN 场效应晶体管 100 V eGaN FET, 5.2 mohm Rdson, 2.3 mm x 1.45 mm, Cu pillar CSP
- EPC2090
- EPC
-
1:
¥32.3406
-
1,926库存量
-
新产品
|
Mouser 零件编号
65-EPC2090
新产品
|
EPC
|
GaN 场效应晶体管 100 V eGaN FET, 5.2 mohm Rdson, 2.3 mm x 1.45 mm, Cu pillar CSP
|
|
1,926库存量
|
|
|
¥32.3406
|
|
|
¥21.2553
|
|
|
¥14.8934
|
|
|
¥13.3227
|
|
|
¥12.656
|
|
|
¥10.8367
|
|
最低: 1
倍数: 1
:
2,500
|
|
|
|
|
GaN 场效应晶体管 100 V eGaN FET, 2 mohm Rdson, 3.23 mm x 2.88 mm, Cu pillar CSP
- EPC2091
- EPC
-
1:
¥80.4786
-
800库存量
-
新产品
|
Mouser 零件编号
65-EPC2091
新产品
|
EPC
|
GaN 场效应晶体管 100 V eGaN FET, 2 mohm Rdson, 3.23 mm x 2.88 mm, Cu pillar CSP
|
|
800库存量
|
|
|
¥80.4786
|
|
|
¥55.1666
|
|
|
¥41.1885
|
|
|
¥33.5836
|
|
最低: 1
倍数: 1
:
1,000
|
|
|
|
|
运算放大器 - 运放 8 GHz Gain Bandwidth Product Decompensa
Texas Instruments OPA855YR
- OPA855YR
- Texas Instruments
-
1:
¥54.4321
-
2,975库存量
-
新产品
|
Mouser 零件编号
595-OPA855YR
新产品
|
Texas Instruments
|
运算放大器 - 运放 8 GHz Gain Bandwidth Product Decompensa
|
|
2,975库存量
|
|
|
¥54.4321
|
|
|
¥41.8552
|
|
|
¥38.7138
|
|
|
¥38.7138
|
|
最低: 1
倍数: 1
最大: 25
:
3,000
|
|
|