GaN 半导体

结果: 796
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS
Texas Instruments 栅极驱动器 650V 70m? TOLL-packa ged GaN FET with in
Fairview Microwave 射频放大器 30 MHz to 2.7 GHz, SMA, GaN Bi-Directional Amplifier, High Power, 8W Psat, 36dB Tx Gain, 1 microsec speed, Manual T/R Control
Fairview Microwave 射频放大器 4.4 GHz to 5.1 GHz, SMA, GaN Bi-Directional Amplifier, C-Band, 10W Psat, 10dB Tx Gain, 20% Efficiency, 2 microsec speed, Manual T/R Control
Fairview Microwave 射频放大器 5.125 GHz to 5.875 GHz, SMA, GaN Bi-Directional Amplifier, C-Band, 10W Psat, 43dB Tx Gain, 20% Efficiency, 2 microsec speed, Autosensing
Nexperia GaN 场效应晶体管 GANE011-080CBA/SOT8134/WLCSP9

Qorvo GaN 场效应晶体管 DC-4 GHz, 15W, 50V GaN RF Tr
Renesas Electronics MOSFET Auto. MOS REXFET-1 100V 6.7mohm 5x6pkg

Renesas Electronics MOSFET Auto. MOS REXFET-1 100V 21mohm 3x3pkg

Renesas Electronics MOSFET Auto. MOS REXFET-1 150V 3.9mohm TOLL

Renesas Electronics MOSFET Auto. MOS REXFET-1 150V 3.9mohm TOLT

Renesas Electronics MOSFET Ind. MOS REXFET-1 100V 3.7mohm 5x6pkg

Renesas Electronics MOSFET Ind. MOS REXFET-1 150V 3.9mohm TOLT

Renesas Electronics MOSFET Ind. MOS REXFET-1 150V 3.9mohm TOLL

Renesas Electronics MOSFET Ind. MOS REXFET-1 100V 6.7mohm 5x6pkg

Mini-Circuits 射频放大器 SMT MMIC, Low Noise, Linear, pHEMT Amplifier, 500 MHz to 2500 MHz, 50ohm

CML Micro 射频放大器 5.5W Ka-Band GaN Power Amplifier
Renesas Electronics GaN 场效应晶体管 700V, 135mohm GaN FET in 5x6 PQFN IP

Renesas Electronics GaN 场效应晶体管 700V, 135mohm GaN FET in 8x8 PQFN IP

Renesas Electronics GaN 场效应晶体管 650V, 50mohm GaN FET in TOLL

Renesas Electronics GaN 场效应晶体管 650V, 70mohm GaN FET in TOLL

Renesas Electronics GaN 场效应晶体管 650V, 100mohm GaN FET in 8x8 PQFN

Renesas Electronics GaN 场效应晶体管 700V, 130mohm GaN FET in 8x8 PQFN PP

Renesas Electronics GaN 场效应晶体管 700V, 130mohm GaN FET in TO-220

Renesas Electronics GaN 场效应晶体管 700V, 150mohm GaN FET in 8x8 PQFN

Renesas Electronics GaN 场效应晶体管 700V, 150mohm GaN FET in 8x8 PQFN