最新晶体管

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晶体管类型

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已应用过滤器:

制造商 = Micro Commercial Components (MCC) 返回“产品”选项卡，以修改您的当前过滤条件。

Micro Commercial Components (MCC) MCG4D8N04Y 40V Low RDS(on) N-Channel MOSFETs

04/16/2025

- Use Split Gate Trench power MOSFET technology and are available in industrial and automotive grade.

Micro Commercial Components (MCC) 600V MSJL120N60FH MOSFET

02/12/2025

- Uses superjunction technology and a FRED body diode to facilitate high-speed switching and recovery.

Micro Commercial Components (MCC) 40V MCACLF320N04Y N-Channel Power MOSFET

02/12/2025

- High efficiency and reliable MOSFET designed for diverse high-power applications.

Micro Commercial Components (MCC) MCWx 600V N-Channel Power MOSFETs

12/30/2024

- Three advanced 600V components, engineered for low losses, fast switching, and high efficiency.

Micro Commercial Components (MCC) MIS80N120NT1YHE3 1200V沟槽式场终止型IGBT

11/28/2024

- Made for efficiency with low saturated VCE and minimal switching losses.

Micro Commercial Components (MCC) MCTL2D0N10YHR 100 V N沟道MOSFET

11/25/2024

- Wide SOA and low RDS(on) efficient and reliable solution for linear mode operation.

Micro Commercial Components (MCC) 600V N沟道超级结功率MOSFET

10/04/2024

- 具有低导通电阻、低导通损耗和软开关特性，采用快速反向恢复二极管。

Micro Commercial Components (MCC) MCU1K4N95SH N沟道超级结功率MOSFET

10/03/2024

- 具有低栅极至漏极电荷，可降低导通损耗并提高整体效率。

Micro Commercial Components (MCC) MCGL2D1N03YL N 通道 MOSFET

09/04/2024

- 30V功率MOSFET，设计用于以低功耗提供良好的散热性能。

Micro Commercial Components (MCC) SICWx碳化硅（SiC）MOSFET

09/03/2024

- 650V SiC MOSFET具备高速开关能力，采用TO-247封装。

Micro Commercial Components (MCC) 600V N沟道MOSFET

09/03/2024

- 超级结 (SJ) 技术具有低RDS(on)，采用集成快速恢复二极管。

Micro Commercial Components (MCC) SICW0x 1200V SiC N沟道MOSFET

09/03/2024

- 采用多功能TO-247-4、TO-247-4L和TO-247AB封装，可提高性能。

Micro Commercial Components (MCC) MCP2D6N10Y 100 V N沟道MOSFET

08/28/2024

- 设计用于大功率开关的100V N沟道MOSFET。

Micro Commercial Components (MCC) MCG50P03B 30 V P通道MOSFET

08/19/2024

- 设计用于需要可靠性能的空间受限应用。

Micro Commercial Components (MCC) MCTL150N06YHE3汽车级60 V N沟道MOSFET

08/12/2024

- 符合AEC-Q101标准，设计用于重新定义汽车应用中的电源效率和可靠性。

Micro Commercial Components (MCC) Electric Power Steering (EPS) Solutions

08/01/2024

- Support today’s vehicle systems with components engineered for precise control, safety, and comfort.

Micro Commercial Components (MCC) Automotive Front & Rear LED Lighting Solutions

08/01/2024

- These lighting systems improve driver visibility, passenger safety, and vehicle styling.

Micro Commercial Components (MCC) Auto Seat Control Solutions

08/01/2024

- Delivers the compact, efficient & robust performance needed to power modern vehicle seating systems.

Micro Commercial Components (MCC) Battery Management System (BMS)

08/01/2024

- Delivers the precision, safety, and efficiency required to support today’s electric vehicles (EVs).

Micro Commercial Components (MCC) DC Fast Charging Solutions

08/01/2024

- Supports EVs with high-performance components designed for speed, safety, and system efficiency.

Micro Commercial Components (MCC) MCACx 30V-60V逻辑电平N沟道MOSFET

07/11/2024

- 采用分离栅极沟槽 (SGT) MOSFET技术和DFN5060封装。

Micro Commercial Components (MCC) MCACLS N-Channel Dual-Side Cooling MOSFETs

06/24/2024

- Feature superior thermal performance with 40V drain-source voltage and are AEC-Q101 qualified.

Micro Commercial Components (MCC) 100V 7.5mΩ N-Channel MOSFETs

06/04/2024

- Offers split-gate trench (SGT) technology, 100V capacity, and an on-resistance of only 7.5mΩ.

Micro Commercial Components (MCC) MCB2D & MCU2D 40V N-channel MOSFETs

05/31/2024

- High-density cell design with 2.8mΩ low on-resistance ensures efficient automotive power management.

Micro Commercial Components (MCC) MCB70N15YHE3 AEC-Q101 Qualified N-Channel MOSFET

05/22/2024

- AEC-Q101 qualified N-channel MOSFET that utilizes split gate trench MOSFET technology.

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过滤方式：

TDK-Lambda i1R ORing MOSFET Modules

02/05/2026

- High-efficiency and low-loss power devices designed to replace traditional diodes.

IXYS X4-Class Power MOSFETs

02/02/2026

- Offer low on-state resistance and conduction losses, with improved efficiency.

Qorvo QPD1014A GaN输入匹配晶体管

01/20/2026

- 一款输出功率 (P3dB)为15W、输入阻抗匹配为50Ω的分立式GaN-on-SiC HEMT，其工作频率范围为30MHz至1.2GHz。

Qorvo QPD1011A GaN输入匹配晶体管

01/19/2026

- 一款输出功率(P3dB)为7W、输入阻抗匹配特性为50Ω的分立式GaN-on-SiC HEMT，其工作频率范围为30MHz至1.2GHz。

Qorvo QPD1004A GaN输入匹配晶体管

01/19/2026

- 25W、50Ω输入匹配分立式GaN-on-SiC HEMT，在50V电源轨下运行，工作频率范围为30MHz至1400MHz。

onsemi NVBYST0D6N08X 80 V N沟道功率MOSFET

12/26/2025

- 该器件具有低QRR和软恢复体二极管，采用TCPAK1012 (TopCool) 封装。

Infineon Technologies OptiMOS™ 6 80V功率MOSFET

12/23/2025

- 凭借广泛的产品组合确立了行业性能基准。

Infineon Technologies CoolSiC™车规级750V G2 MOSFET

12/19/2025

- 专为满足电动汽车 (EV) 应用的严格要求而设计。

onsemi NVMFD5877NL双N沟道MOSFET

12/19/2025

- 专为紧凑高效的设计而打造，具有优异的热性能。

onsemi NxT2023N065M3S EliteSiC MOSFET

12/04/2025

- 具有低有效输出电容和超低栅极电荷特性。

STMicroelectronics SGT080R70ILB电子模式PowerGaN晶体管

12/04/2025

- 电子模式PowerGaN晶体管设计用于高效电源转换应用。

Infineon Technologies 750V TRENCHSTOP™ IGBT7 H7分立晶体管

12/01/2025

- DTO247封装，替代并联连接的多个TO247封装低电流晶体管。

onsemi FDC642P-F085小信号MOSFET

11/25/2025

- 采用高性能沟槽技术，具备极低RDS(on)和快速开关速度。

onsemi NTTFS007P02P8 P沟道低/中压MOSFET

11/25/2025

- 采用PowerTrench技术打造，具备极低RDS(on)、快速开关性能及耐用性。

iDEAL Semiconductor iS20M028S1C SuperQ™ 200V N-Ch Power MOSFETs

11/24/2025

- Designed for SMPS and high-efficiency motor drives in a robust PDFN package measuring 5mm x 6mm.

onsemi NVD6824NL单N沟道MOSFET

11/20/2025

- 具备低RDS(on)，可将导通损耗降至最低，同时兼具大电流能力。

Central Semiconductor 1700V N沟道碳化硅（SiC）MOSFET

11/20/2025

- These MOSFETS are designed for high-speed switching and fast reverse recovery applications.

onsemi NVD5867NL单N沟道功率MOSFET

11/20/2025

- 具有60V漏源电压、39mΩ漏源导通电阻，并通过AEC-Q101认证。

onsemi NVMFS5832NL单N沟道功率MOSFET

11/19/2025

- 专为低电压应用设计的高性能MOSFET，可实现高效的电源切换。

onsemi NVMFS5830NL单N沟道功率MOSFET

11/19/2025

- 一款高效的单N沟道功率MOSFET，专为高要求电源管理应用而设计。

onsemi AFGB30T65RQDN IGBT

11/19/2025

- 兼具高品质因数及低导通损耗和低开关损耗。

STMicroelectronics SGT070R70HTO增强模式PowerGaN晶体管

11/07/2025

- 基于GaN技术打造，专为高要求电源转换应用而设计。

Diodes Incorporated 2N7002 N沟道增强模式场效应晶体管

10/31/2025

- 具有快速开关性能和低栅极电荷特性，最大漏源电压为60V。

Comchip Technology AMMBT2222AM NPN Automotive Small Signal Transistor

10/31/2025

- The device has a 75V collector-base voltage rating and a 600mA collector current-continuous rating.

Comchip Technology AMMBT2907AM PNP Automotive Small Signal Transistor

10/31/2025

- The device has a -60V collector-base voltage rating & a -600mA collector current-continuous rating.

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晶体管类型

过滤方式：

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