最新分立半导体
分离式半导体类型
已应用过滤器:
SemiQ GEN3 1200V SiC MOSFET电源模块
08/11/2025
08/11/2025
With an isolated backplate, based on third-generation SiC technology, and tested at over 1400V.
SemiQ GEN3 1200V SiC MOSFET分立器件
01/02/2025
01/02/2025
Developed to increase performance and cut switching losses in high-voltage applications.
SemiQ GP2T020A120H 1200V SiC MOSFET
11/15/2023
11/15/2023
Offers reduced switching losses, higher efficiency, and increased power density.
SemiQ GCMS040B120S1-E1 1200V SiC COPACK Power Module
03/09/2023
03/09/2023
The module is simple to drive, very rugged, & easy to mount with high-speed switching SiC MOSFETs.
SemiQ GCMX040B120S1-E1 1200V SiC MOSFET Power Module
03/09/2023
03/09/2023
The module is simple to drive, very rugged, & easy to mount with high-speed switching SiC MOSFETs.
SemiQ GP2T080A120H 1200V SiC MOSFET
07/28/2022
07/28/2022
Features high-speed switching, a driver source pin for gate driving, and a reliable body diode.
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Taiwan Semiconductor TESDA1L2B17P1Q1 ESD Protection Diode
02/19/2026
02/19/2026
Safeguards power interfaces, control lines, or low‑speed data lines within electronic systems.
Semtech TDS5311P SurgeSwitch™ 1-Line 53V EOS Protection IC
02/18/2026
02/18/2026
Provides high-energy EOS protection with superior temperature and clamping characteristics.
Vishay SE40CLJ Surface-Mount High Voltage Rectifiers
02/03/2026
02/03/2026
Designed for demanding power conversion applications
Vishay SE30CLJ Surface-Mount High Voltage Rectifiers
02/03/2026
02/03/2026
Engineered for robust performance in demanding power conversion applications.
Diotec Semiconductor BZX84B3V6 SMD Planar Zener Diode
02/03/2026
02/03/2026
Offers a sharp Zener voltage breakdown and a low leakage current.
Vishay High Current Density/Voltage Schottky Rectifiers
02/03/2026
02/03/2026
Delivers robust performance for demanding power‑conversion applications.
Qorvo QPD1014A GaN输入匹配晶体管
01/20/2026
01/20/2026
一款输出功率 (P3dB)为15W、输入阻抗匹配为50Ω的分立式GaN-on-SiC HEMT,其工作频率范围为30MHz至1.2GHz。
Qorvo QPD1011A GaN输入匹配晶体管
01/19/2026
01/19/2026
一款输出功率(P3dB)为7W、输入阻抗匹配特性为50Ω的分立式GaN-on-SiC HEMT,其工作频率范围为30MHz至1.2GHz。
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