最新分立元件和电源模块
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ROHM Semiconductor BST400D12P4A1x1 TRCDRIVE pack™with Molded Modules
03/17/2026
03/17/2026
该器件额定电压为1200V,外形尺寸为41.6mm × 52.5mm ,搭载第四代SiC MOSFET元件。
SemiQ GEN3 1200V SiC MOSFET电源模块
08/11/2025
08/11/2025
With an isolated backplate, based on third-generation SiC technology, and tested at over 1400V.
Infineon Technologies EconoPACK™ 3 TRENCHSTOP™ IGBT 7模块
07/01/2025
07/01/2025
结合CoolSiC™ SCHOTTKY二极管和集成式NTC,实现可靠的热监控。
onsemi NXH015F120M3F1PTG碳化矽(SiC)模块
05/23/2025
05/23/2025
该模块采用15mΩ/1200V M3S碳化硅 (SiC) MOSFET全桥和带三氧化二铝 (Al2O3) DBC陶瓷基板的热敏电阻,封装为F1型。
Navitas Semiconductor SiCPAK™ F/G 1200V High-Power Modules
02/20/2025
02/20/2025
Robust, high-voltage SiC MOSFETs, critical for reliable, harsh-environment, high-power applications.
Micro Commercial Components (MCC) MIS80N120NT1YHE3 1200V沟槽式场终止型IGBT
11/28/2024
11/28/2024
Made for efficiency with low saturated VCE and minimal switching losses.
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