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射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER RF Transistor
- PD55025S-E
- STMicroelectronics
-
1:
¥219.8641
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148库存量
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Mouser 零件编号
511-PD55025S-E
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STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER RF Transistor
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|
148库存量
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|
¥219.8641
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¥161.2171
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¥158.9006
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¥158.652
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查看
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报价
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最低: 1
倍数: 1
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N-Channel
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Si
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7 A
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40 V
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1 GHz
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14.5 dB
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25 W
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- 65 C
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+ 150 C
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SMD/SMT
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PowerSO-10RF-Straight-4
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Tube
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射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER R.F.
- PD55003S-E
- STMicroelectronics
-
1:
¥78.2525
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472库存量
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Mouser 零件编号
511-PD55003S-E
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STMicroelectronics
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射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER R.F.
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472库存量
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¥78.2525
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¥54.4321
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¥51.3698
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¥51.2794
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报价
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报价
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最低: 1
倍数: 1
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N-Channel
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Si
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2.5 A
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40 V
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1 GHz
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17 dB
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3 W
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- 65 C
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+ 150 C
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SMD/SMT
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PowerSO-10RF-Straight-4
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Tube
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射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER RF Transistor
- PD55015S-E
- STMicroelectronics
-
1:
¥190.744
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323库存量
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Mouser 零件编号
511-PD55015S-E
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER RF Transistor
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|
323库存量
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¥190.744
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¥156.0869
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¥137.8826
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¥123.1587
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查看
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报价
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|
最低: 1
倍数: 1
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N-Channel
|
Si
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5 A
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40 V
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1 GHz
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14 dB
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15 W
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- 65 C
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+ 150 C
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SMD/SMT
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PowerSO-10RF-Straight-4
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Tube
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射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER R.F.
- PD55015STR-E
- STMicroelectronics
-
600:
¥80.3204
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无库存交货期 23 周
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Mouser 零件编号
511-PD55015STR-E
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER R.F.
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无库存交货期 23 周
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最低: 600
倍数: 600
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N-Channel
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Si
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5 A
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40 V
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|
1 GHz
|
14 dB
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15 W
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- 65 C
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+ 150 C
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SMD/SMT
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PowerSO-10RF-Straight-4
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Reel
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射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER R.F.
- PD57018STR-E
- STMicroelectronics
-
600:
¥173.6245
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无库存交货期 23 周
|
Mouser 零件编号
511-PD57018STR-E
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STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER R.F.
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无库存交货期 23 周
|
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最低: 600
倍数: 600
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N-Channel
|
Si
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2.5 A
|
65 V
|
760 mOhms
|
1 GHz
|
16.5 dB
|
18 W
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- 65 C
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+ 150 C
|
SMD/SMT
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PowerSO-10RF-Straight-4
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Reel
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射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER R.F.
- PD57030S-E
- STMicroelectronics
-
400:
¥293.8904
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无库存交货期 23 周
|
Mouser 零件编号
511-PD57030S-E
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER R.F.
|
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无库存交货期 23 周
|
|
最低: 400
倍数: 400
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N-Channel
|
Si
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4 A
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65 V
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|
1 GHz
|
14 dB
|
30 W
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- 65 C
|
+ 150 C
|
SMD/SMT
|
PowerSO-10RF-Straight-4
|
Tube
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射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Pwr Transistors LDMOST Plastic Fam
- PD57060S-E
- STMicroelectronics
-
400:
¥337.7344
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无库存交货期 23 周
|
Mouser 零件编号
511-PD57060S-E
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Pwr Transistors LDMOST Plastic Fam
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无库存交货期 23 周
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最低: 400
倍数: 400
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N-Channel
|
Si
|
7 A
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65 V
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1 GHz
|
14.3 dB
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60 W
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- 65 C
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+ 150 C
|
SMD/SMT
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PowerSO-10RF-Straight-4
|
Tube
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射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER R.F. N-Ch Trans
- PD85035S-E
- STMicroelectronics
-
400:
¥157.4881
-
无库存交货期 23 周
|
Mouser 零件编号
511-PD85035S-E
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER R.F. N-Ch Trans
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无库存交货期 23 周
|
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最低: 400
倍数: 400
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N-Channel
|
Si
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8 A
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40 V
|
|
1 GHz
|
14.9 dB
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35 W
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- 65 C
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+ 150 C
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SMD/SMT
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PowerSO-10RF-Straight-4
|
Tube
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射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER R.F. N-Ch Trans
- PD85035STR-E
- STMicroelectronics
-
600:
¥178.8338
-
无库存交货期 23 周
|
Mouser 零件编号
511-PD85035STR-E
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER R.F. N-Ch Trans
|
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无库存交货期 23 周
|
|
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¥178.8338
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查看
|
|
|
报价
|
|
最低: 600
倍数: 600
|
|
|
N-Channel
|
Si
|
8 A
|
40 V
|
|
1 GHz
|
14.9 dB
|
35 W
|
- 65 C
|
+ 150 C
|
SMD/SMT
|
PowerSO-10RF-Straight-4
|
Reel
|
|