TGA2237 Wideband Distributed Amplifier

Qorvo TGA2237 Wideband Distributed Amplifier is fabricated on the Qorvo production 0.25um Gallium-Nitride (GaN) on Silicon Carbide (SiC) process. The TGA2237 operates from 0.03GHz to 2.5GHz and provides 10W of saturated output power with 13dB of large signal gain and greater than 50.% power-added efficiency. The broadband performance supports both radar and communication applications across defense and commercial markets as well as electronic warfare. The TGA2237 amplifier is fully matched to 50Ω at both RF ports allowing for simple system integration. DC blocks are required on both RF ports and the drain voltage must be injected through an off chip bias-tee on the RF output port.

结果: 2
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 工作频率 工作电源电压 工作电源电流 增益 类型 安装风格 封装 / 箱体 技术 P1dB - 压缩点 最小工作温度 最大工作温度 系列 封装
Qorvo 射频放大器 .03-2.5GHz 10W GaN Sm Sig. Gain 19dB 无库存交货期 20 周
最低: 25
倍数: 25

2.5 GHz 30 V 360 mA 19 dB Power Amplifiers SMD/SMT Die GaN 32 dBm TGA2237 Gel Pack
Qorvo 射频放大器 30-2500MHz 10W GaN PAE > 50% Gain 19dB 无库存交货期 16 周
最低: 25
倍数: 25

30 MHz to 2.5 GHz 32 V 360 mA 19 dB Power Amplifiers SMD/SMT QFN-32 GaN SiC 33 dBm - 40 C + 85 C TGA2237 Waffle