|
|
栅极驱动器 60A POWER STAGE
- SIC660CD-T1-GE3
- Vishay
-
1:
¥28.1257
-
15,378库存量
|
Mouser 零件编号
78-SIC660CD-T1-GE3
|
Vishay
|
栅极驱动器 60A POWER STAGE
|
|
15,378库存量
|
|
|
¥28.1257
|
|
|
¥21.1762
|
|
|
¥19.3569
|
|
|
¥17.4585
|
|
|
查看
|
|
|
¥16.5432
|
|
|
¥16.3737
|
|
|
¥15.8765
|
|
|
¥15.3002
|
|
最低: 1
倍数: 1
|
|
|
|
|
MOSFET模块 ACEPACK 2 power module, 3-level topology, SiC Power MOSFETs 750 & 1200V 100 A
- A2U8M12W3-FC
- STMicroelectronics
-
1:
¥1,463.9037
-
18库存量
-
新产品
|
Mouser 零件编号
511-A2U8M12W3-FC
新产品
|
STMicroelectronics
|
MOSFET模块 ACEPACK 2 power module, 3-level topology, SiC Power MOSFETs 750 & 1200V 100 A
|
|
18库存量
|
|
|
¥1,463.9037
|
|
|
¥1,419.9806
|
|
最低: 1
倍数: 1
|
|
|
|
|
MOSFET模块 Automotive-grade ACEPACK DMT-32 power module, 1200 V, 47.5 mOhm SiC MOSFET NTC
- M1P45M12W2-1LA
- STMicroelectronics
-
1:
¥498.2848
-
120库存量
-
新产品
|
Mouser 零件编号
511-M1P45M12W2-1LA
新产品
|
STMicroelectronics
|
MOSFET模块 Automotive-grade ACEPACK DMT-32 power module, 1200 V, 47.5 mOhm SiC MOSFET NTC
|
|
120库存量
|
|
最低: 1
倍数: 1
|
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247-4 package
- SCT012W90G3-4AG
- STMicroelectronics
-
1:
¥183.625
-
632库存量
-
新产品
|
Mouser 零件编号
511-SCT012W90G3-4AG
新产品
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247-4 package
|
|
632库存量
|
|
|
¥183.625
|
|
|
¥115.7233
|
|
|
报价
|
|
|
报价
|
|
最低: 1
倍数: 1
|
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 16 mOhm typ., 112 A in an H2PAK-7 package
- SCT016H120G3AG
- STMicroelectronics
-
1:
¥206.5414
-
461库存量
-
新产品
|
Mouser 零件编号
511-SCT016H120G3AG
新产品
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 16 mOhm typ., 112 A in an H2PAK-7 package
|
|
461库存量
|
|
|
¥206.5414
|
|
|
¥149.3069
|
|
|
¥147.0695
|
|
|
¥142.0184
|
|
|
¥130.1082
|
|
最低: 1
倍数: 1
:
1,000
|
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HU3PAK package
- SCT020HU120G3AG
- STMicroelectronics
-
1:
¥188.258
-
161库存量
-
600预期 2026/9/25
-
新产品
|
Mouser 零件编号
511-SCT020HU120G3AG
新产品
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HU3PAK package
|
|
161库存量
600预期 2026/9/25
|
|
|
¥188.258
|
|
|
¥140.6172
|
|
|
¥121.588
|
|
|
¥107.4517
|
|
最低: 1
倍数: 1
:
600
|
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an H2PAK-7 package
- SCT027H65G3AG
- STMicroelectronics
-
1:
¥112.5819
-
881库存量
-
新产品
|
Mouser 零件编号
511-SCT027H65G3AG
新产品
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an H2PAK-7 package
|
|
881库存量
|
|
|
¥112.5819
|
|
|
¥78.5802
|
|
|
¥63.8563
|
|
|
¥60.3872
|
|
最低: 1
倍数: 1
:
1,000
|
|
|
|
|
碳化硅MOSFET Silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in a TO-LL package
- SCT055TO65G3
- STMicroelectronics
-
1:
¥75.6874
-
1,754库存量
-
新产品
|
Mouser 零件编号
511-SCT055TO65G3
新产品
|
STMicroelectronics
|
碳化硅MOSFET Silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in a TO-LL package
|
|
1,754库存量
|
|
|
¥75.6874
|
|
|
¥51.6975
|
|
|
¥42.6801
|
|
|
¥38.7929
|
|
|
¥35.482
|
|
|
¥35.482
|
|
最低: 1
倍数: 1
:
1,800
|
|
|
|
|
栅极驱动器 120V 4A half-bridge driver with 8V UVLO
- UCC27311ADRCR
- Texas Instruments
-
1:
¥18.532
-
2,235库存量
-
新产品
|
Mouser 零件编号
595-UCC27311ADRCR
新产品
|
Texas Instruments
|
栅极驱动器 120V 4A half-bridge driver with 8V UVLO
|
|
2,235库存量
|
|
|
¥18.532
|
|
|
¥13.6504
|
|
|
¥12.4865
|
|
|
¥11.0853
|
|
|
¥11.0853
|
|
最低: 1
倍数: 1
最大: 100
:
3,000
|
|
|
|
|
栅极驱动器 650V high-side gate driver
- 1ED2127S65FXUMA1
- Infineon Technologies
-
1:
¥13.1532
-
2,419库存量
-
新产品
|
Mouser 零件编号
726-1ED2127S65FXUMA
新产品
|
Infineon Technologies
|
栅极驱动器 650V high-side gate driver
|
|
2,419库存量
|
|
|
¥13.1532
|
|
|
¥9.5937
|
|
|
¥8.6897
|
|
|
¥7.7405
|
|
|
¥6.4636
|
|
|
查看
|
|
|
¥7.2659
|
|
|
¥6.9947
|
|
|
¥6.9043
|
|
|
¥6.328
|
|
最低: 1
倍数: 1
:
2,500
|
|
|
|
|
栅极驱动器 650V high-side gate driver
- 1ED2147S65FXUMA1
- Infineon Technologies
-
1:
¥13.1532
-
2,445库存量
-
新产品
|
Mouser 零件编号
726-1ED2147S65FXUMA1
新产品
|
Infineon Technologies
|
栅极驱动器 650V high-side gate driver
|
|
2,445库存量
|
|
|
¥13.1532
|
|
|
¥9.5937
|
|
|
¥8.6897
|
|
|
¥7.7405
|
|
|
¥6.4636
|
|
|
查看
|
|
|
¥7.2659
|
|
|
¥6.9947
|
|
|
¥6.9043
|
|
|
¥6.328
|
|
最低: 1
倍数: 1
:
2,500
|
|
|
|
|
栅极驱动器 HVGD_TRACT
- 1EDI3028ASXUMA1
- Infineon Technologies
-
1:
¥32.1711
-
990库存量
-
新产品
|
Mouser 零件编号
726-1EDI3028ASXUMA1
新产品
|
Infineon Technologies
|
栅极驱动器 HVGD_TRACT
|
|
990库存量
|
|
|
¥32.1711
|
|
|
¥24.3176
|
|
|
¥22.3288
|
|
|
¥20.1818
|
|
|
¥17.6167
|
|
|
查看
|
|
|
¥19.1083
|
|
|
¥18.9388
|
|
|
¥17.2099
|
|
|
¥17.0404
|
|
最低: 1
倍数: 1
:
1,000
|
|
|
|
|
碳化硅MOSFET CoolSiC Automotive MOSFET 1200 V
- AIMCQ120R040M1TXTMA1
- Infineon Technologies
-
1:
¥112.9096
-
1,170库存量
-
750预期 2026/10/22
-
新产品
|
Mouser 零件编号
726-AIMCQ120R040M1TX
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC Automotive MOSFET 1200 V
|
|
1,170库存量
750预期 2026/10/22
|
|
|
¥112.9096
|
|
|
¥78.8288
|
|
|
¥64.1049
|
|
|
¥59.89
|
|
|
¥59.89
|
|
最低: 1
倍数: 1
:
750
|
|
|
|
|
碳化硅MOSFET SIC_DISCRETE
- AIMCQ120R120M1TXTMA1
- Infineon Technologies
-
1:
¥62.8619
-
494库存量
-
750预期 2026/7/16
-
新产品
|
Mouser 零件编号
726-AIMCQ120R120M1TX
新产品
|
Infineon Technologies
|
碳化硅MOSFET SIC_DISCRETE
|
|
494库存量
750预期 2026/7/16
|
|
|
¥62.8619
|
|
|
¥42.5106
|
|
|
¥30.9394
|
|
|
¥27.8771
|
|
|
¥27.8771
|
|
最低: 1
倍数: 1
:
750
|
|
|
|
|
碳化硅MOSFET SIC_DISCRETE
- AIMCQ120R160M1TXTMA1
- Infineon Technologies
-
1:
¥53.0987
-
1,478库存量
-
750预期 2026/7/9
-
新产品
|
Mouser 零件编号
726-AIMCQ120R160M1TX
新产品
|
Infineon Technologies
|
碳化硅MOSFET SIC_DISCRETE
|
|
1,478库存量
750预期 2026/7/9
|
|
|
¥53.0987
|
|
|
¥35.6515
|
|
|
¥25.6397
|
|
|
¥22.1706
|
|
|
¥22.1706
|
|
最低: 1
倍数: 1
:
750
|
|
|
|
|
碳化硅MOSFET CoolSiC Automotive Power Device 750 V G2
- AIMDQ75R025M2HXTMA1
- Infineon Technologies
-
1:
¥126.8877
-
554库存量
-
新产品
|
Mouser 零件编号
726-AIMDQ75R025M2HXT
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC Automotive Power Device 750 V G2
|
|
554库存量
|
|
|
¥126.8877
|
|
|
¥87.9253
|
|
|
¥70.7267
|
|
|
¥64.9298
|
|
|
¥64.9298
|
|
最低: 1
倍数: 1
:
750
|
|
|
|
|
碳化硅MOSFET CoolSiC Automotive Power Device 750 V G2
- AIMDQ75R060M2HXTMA1
- Infineon Technologies
-
1:
¥76.0151
-
1,215库存量
-
新产品
|
Mouser 零件编号
726-AIMDQ75R060M2HXT
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC Automotive Power Device 750 V G2
|
|
1,215库存量
|
|
|
¥76.0151
|
|
|
¥53.5168
|
|
|
¥43.2564
|
|
|
¥38.4652
|
|
|
¥34.0808
|
|
最低: 1
倍数: 1
:
750
|
|
|
|
|
MOSFET AUTOMOTIVE_SICMOS
- AIMZA75R008M1HXKSA1
- Infineon Technologies
-
1:
¥330.1182
-
190库存量
-
新产品
|
Mouser 零件编号
726-AIMZA75R008M1HXK
新产品
|
Infineon Technologies
|
MOSFET AUTOMOTIVE_SICMOS
|
|
190库存量
|
|
|
¥330.1182
|
|
|
¥262.7928
|
|
|
¥243.4359
|
|
|
报价
|
|
|
报价
|
|
最低: 1
倍数: 1
|
|
|
|
|
分立半导体模块 HybridPACK DSC S module with SiC MOSFET and NTC
- FF06MR12A04MA2AKSA1
- Infineon Technologies
-
1:
¥1,320.8909
-
82库存量
-
新产品
|
Mouser 零件编号
726-FF06MR12A04MA2AK
新产品
|
Infineon Technologies
|
分立半导体模块 HybridPACK DSC S module with SiC MOSFET and NTC
|
|
82库存量
|
|
|
¥1,320.8909
|
|
|
¥1,005.6661
|
|
最低: 1
倍数: 1
|
|
|
|
|
MOSFET模块 EconoDUAL 3 CoolSiC MOSFET 1200 V module
- FF1MR12MM1HB11BPSA1
- Infineon Technologies
-
1:
¥5,278.7724
-
21库存量
-
新产品
|
Mouser 零件编号
726-FF1MR12MM1HB11BP
新产品
|
Infineon Technologies
|
MOSFET模块 EconoDUAL 3 CoolSiC MOSFET 1200 V module
|
|
21库存量
|
|
|
¥5,278.7724
|
|
|
¥4,428.1988
|
|
最低: 1
倍数: 1
|
|
|
|
|
MOSFET模块 HYBRID PACK DRIVE G2 SIC
- FS03MR12A7MA2BHPSA1
- Infineon Technologies
-
1:
¥4,909.3641
-
3库存量
-
新产品
|
Mouser 零件编号
726-FS03MR12A7MA2BHP
新产品
|
Infineon Technologies
|
MOSFET模块 HYBRID PACK DRIVE G2 SIC
|
|
3库存量
|
|
最低: 1
倍数: 1
|
|
|
|
|
肖特基二极管与整流器 SIC DISCRETE
- IDWD10G200C5XKSA1
- Infineon Technologies
-
1:
¥92.0611
-
1,048库存量
-
720在途量
-
新产品
|
Mouser 零件编号
726-IDWD10G200C5XKSA
新产品
|
Infineon Technologies
|
肖特基二极管与整流器 SIC DISCRETE
|
|
1,048库存量
720在途量
在途量:
480 预期 2026/8/13
240 预期 2026/12/10
|
|
|
¥92.0611
|
|
|
¥60.1386
|
|
|
¥55.7542
|
|
|
¥49.4601
|
|
|
¥46.9854
|
|
最低: 1
倍数: 1
|
|
|
|
|
肖特基二极管与整流器 SIC DISCRETE
- IDWD50G200C5XKSA1
- Infineon Technologies
-
1:
¥297.529
-
150库存量
-
新产品
|
Mouser 零件编号
726-IDWD50G200C5XKSA
新产品
|
Infineon Technologies
|
肖特基二极管与整流器 SIC DISCRETE
|
|
150库存量
|
|
|
¥297.529
|
|
|
¥242.7692
|
|
|
¥214.4853
|
|
|
¥200.3377
|
|
最低: 1
倍数: 1
|
|
|
|
|
肖特基二极管与整流器 SIC DISCRETE
- IDWD80G200C5XKSA1
- Infineon Technologies
-
1:
¥378.0076
-
176库存量
-
240预期 2027/3/8
-
新产品
|
Mouser 零件编号
726-IDWD80G200C5XKSA
新产品
|
Infineon Technologies
|
肖特基二极管与整流器 SIC DISCRETE
|
|
176库存量
240预期 2027/3/8
|
|
|
¥378.0076
|
|
|
¥303.4841
|
|
|
¥286.2855
|
|
最低: 1
倍数: 1
|
|
|
|
|
碳化硅MOSFET SIC DISCRETE
- IMBG120R034M2HXTMA1
- Infineon Technologies
-
1:
¥105.4629
-
563库存量
-
新产品
|
Mouser 零件编号
726-IMBG120R034M2HXT
新产品
|
Infineon Technologies
|
碳化硅MOSFET SIC DISCRETE
|
|
563库存量
|
|
|
¥105.4629
|
|
|
¥76.2637
|
|
|
¥63.5286
|
|
|
¥56.6582
|
|
|
¥52.9405
|
|
最低: 1
倍数: 1
:
1,000
|
|
|