|
|
GaN 场效应晶体管 100 V eGaN FET, 5.2 mohm Rdson, 2.3 mm x 1.45 mm, Cu pillar CSP
- EPC2090
- EPC
-
1:
¥34.578
-
1,901库存量
-
新产品
|
Mouser 零件编号
65-EPC2090
新产品
|
EPC
|
GaN 场效应晶体管 100 V eGaN FET, 5.2 mohm Rdson, 2.3 mm x 1.45 mm, Cu pillar CSP
|
|
1,901库存量
|
|
|
¥34.578
|
|
|
¥22.7469
|
|
|
¥15.9669
|
|
|
¥13.3227
|
|
|
¥11.0853
|
|
|
¥10.8367
|
|
最低: 1
倍数: 1
:
2,500
|
|
|
|
|
GaN 场效应晶体管 100 V eGaN FET, 2 mohm Rdson, 3.23 mm x 2.88 mm, Cu pillar CSP
- EPC2091
- EPC
-
1:
¥80.4786
-
800库存量
-
新产品
|
Mouser 零件编号
65-EPC2091
新产品
|
EPC
|
GaN 场效应晶体管 100 V eGaN FET, 2 mohm Rdson, 3.23 mm x 2.88 mm, Cu pillar CSP
|
|
800库存量
|
|
|
¥80.4786
|
|
|
¥55.1666
|
|
|
¥41.1885
|
|
|
¥33.5836
|
|
最低: 1
倍数: 1
:
1,000
|
|
|
|
|
GaN 场效应晶体管 CoolGaN Transistor 700 V G5
- IGD70R140D2SAUMA1
- Infineon Technologies
-
1:
¥23.7413
-
1,882库存量
-
新产品
|
Mouser 零件编号
726-IGD70R140D2SAUMA
新产品
|
Infineon Technologies
|
GaN 场效应晶体管 CoolGaN Transistor 700 V G5
|
|
1,882库存量
|
|
|
¥23.7413
|
|
|
¥15.3906
|
|
|
¥10.5881
|
|
|
¥8.5202
|
|
|
¥7.0851
|
|
|
查看
|
|
|
¥7.9552
|
|
|
¥6.4975
|
|
最低: 1
倍数: 1
:
2,500
|
|
|
|
|
GaN 场效应晶体管 CoolGaN Transistor 700 V G5
- IGD70R500D2SAUMA1
- Infineon Technologies
-
1:
¥15.5488
-
3,607库存量
-
新产品
|
Mouser 零件编号
726-IGD70R500D2SAUMA
新产品
|
Infineon Technologies
|
GaN 场效应晶体管 CoolGaN Transistor 700 V G5
|
|
3,607库存量
|
|
|
¥15.5488
|
|
|
¥9.9214
|
|
|
¥6.6218
|
|
|
¥5.2319
|
|
|
¥4.2827
|
|
|
查看
|
|
|
¥4.7799
|
|
|
¥3.8307
|
|
|
¥3.5821
|
|
最低: 1
倍数: 1
:
2,500
|
|
|
|
|
栅极驱动器 140 mohm / 600 V GaN transistor in half-bridge configuration with integrated level-shift gate driver and bootstrap diode
- IGI60L1414B1MXUMA1
- Infineon Technologies
-
1:
¥56.9859
-
2,352库存量
-
新产品
|
Mouser 零件编号
726-IGI60L1414B1MXUM
新产品
|
Infineon Technologies
|
栅极驱动器 140 mohm / 600 V GaN transistor in half-bridge configuration with integrated level-shift gate driver and bootstrap diode
|
|
2,352库存量
|
|
|
¥56.9859
|
|
|
¥40.7817
|
|
|
¥38.6234
|
|
|
¥33.4141
|
|
|
查看
|
|
|
¥26.8827
|
|
|
¥32.5892
|
|
|
¥31.6852
|
|
|
¥31.2671
|
|
|
¥26.8827
|
|
最低: 1
倍数: 1
:
3,000
|
|
|
|
|
栅极驱动器 270 mohm / 600 V GaN transistor in half-bridge configuration with integrated level-shift gate driver and bootstrap diode
- IGI60L2727B1MXUMA1
- Infineon Technologies
-
1:
¥38.3748
-
2,371库存量
-
新产品
|
Mouser 零件编号
726-IGI60L2727B1MXUM
新产品
|
Infineon Technologies
|
栅极驱动器 270 mohm / 600 V GaN transistor in half-bridge configuration with integrated level-shift gate driver and bootstrap diode
|
|
2,371库存量
|
|
|
¥38.3748
|
|
|
¥29.1992
|
|
|
¥26.9618
|
|
|
¥24.3967
|
|
|
查看
|
|
|
¥21.6734
|
|
|
¥23.165
|
|
|
¥22.4983
|
|
|
¥21.8316
|
|
|
¥21.6734
|
|
最低: 1
倍数: 1
:
3,000
|
|
|
|
|
栅极驱动器 500 mohm / 600 V GaN transistor in half-bridge configuration with integrated level-shift gate driver and bootstrap diode
- IGI60L5050B1MXUMA1
- Infineon Technologies
-
1:
¥30.1032
-
2,083库存量
-
新产品
|
Mouser 零件编号
726-IGI60L5050B1MXUM
新产品
|
Infineon Technologies
|
栅极驱动器 500 mohm / 600 V GaN transistor in half-bridge configuration with integrated level-shift gate driver and bootstrap diode
|
|
2,083库存量
|
|
|
¥30.1032
|
|
|
¥22.7469
|
|
|
¥20.8485
|
|
|
¥18.8597
|
|
|
查看
|
|
|
¥14.803
|
|
|
¥17.8653
|
|
|
¥17.289
|
|
|
¥16.7918
|
|
|
¥14.803
|
|
最低: 1
倍数: 1
:
3,000
|
|
|
|
|
GaN 场效应晶体管 Two 140 mohm / 650 V GaN transistors in half-bridge configuration
- IGI65D1414A3MSXUMA1
- Infineon Technologies
-
1:
¥61.5398
-
2,678库存量
-
新产品
|
Mouser 零件编号
726-IGI65D1414A3MSXU
新产品
|
Infineon Technologies
|
GaN 场效应晶体管 Two 140 mohm / 650 V GaN transistors in half-bridge configuration
|
|
2,678库存量
|
|
|
¥61.5398
|
|
|
¥41.6066
|
|
|
¥30.3518
|
|
|
¥29.6173
|
|
|
¥25.8092
|
|
|
¥24.069
|
|
最低: 1
倍数: 1
:
3,000
|
|
|
|
|
GaN 场效应晶体管 CoolGaN Bidirectional Switch
- IGK048B041SXTSA1
- Infineon Technologies
-
1:
¥11.0853
-
2,779库存量
-
新产品
|
Mouser 零件编号
726-IGK048B041SXTSA1
新产品
|
Infineon Technologies
|
GaN 场效应晶体管 CoolGaN Bidirectional Switch
|
|
2,779库存量
|
|
|
¥11.0853
|
|
|
¥7.3224
|
|
|
¥6.0907
|
|
|
¥5.8534
|
|
|
¥4.972
|
|
|
查看
|
|
|
¥5.65
|
|
|
¥4.8364
|
|
最低: 1
倍数: 1
:
4,000
|
|
|
|
|
交流/直流转换器 20 W (85-580 VAC)
- INN3624C-H606-TL
- Power Integrations
-
1:
¥24.9843
-
1,440库存量
-
新产品
|
Mouser 零件编号
869-INN3624C-H606-TL
新产品
|
Power Integrations
|
交流/直流转换器 20 W (85-580 VAC)
|
|
1,440库存量
|
|
|
¥24.9843
|
|
|
¥18.7806
|
|
|
¥17.1195
|
|
|
¥15.4697
|
|
|
¥13.1532
|
|
|
查看
|
|
|
¥14.6448
|
|
|
¥14.3058
|
|
|
¥13.9781
|
|
|
¥12.9046
|
|
最低: 1
倍数: 1
:
2,000
|
|
|
|
|
交流/直流转换器 35 W (85-580 VAC)
- INN3626C-H606-TL
- Power Integrations
-
1:
¥28.3743
-
1,592库存量
-
新产品
|
Mouser 零件编号
869-INN3626C-H606-TL
新产品
|
Power Integrations
|
交流/直流转换器 35 W (85-580 VAC)
|
|
1,592库存量
|
|
|
¥28.3743
|
|
|
¥21.3457
|
|
|
¥19.6055
|
|
|
¥17.6167
|
|
|
¥15.0516
|
|
|
查看
|
|
|
¥16.7127
|
|
|
¥16.4641
|
|
|
¥16.046
|
|
|
¥14.7239
|
|
最低: 1
倍数: 1
:
2,000
|
|
|
|
|
GaN 场效应晶体管 GaN HEMT Die DC-6.0GHz, 30 Watt
- CGH60030D-GP4
- MACOM
-
10:
¥1,096.0661
-
10库存量
|
Mouser 零件编号
941-CGH60030D
|
MACOM
|
GaN 场效应晶体管 GaN HEMT Die DC-6.0GHz, 30 Watt
|
|
10库存量
|
|
|
¥1,096.0661
|
|
|
查看
|
|
|
报价
|
|
最低: 10
倍数: 10
|
|
|
|
|
GaN 场效应晶体管 DC-1.7 GHz, 500W, 50V, GaN RF Tr
- QPD1016L
- Qorvo
-
1:
¥8,821.6275
-
1库存量
|
Mouser 零件编号
772-QPD1016L
|
Qorvo
|
GaN 场效应晶体管 DC-1.7 GHz, 500W, 50V, GaN RF Tr
|
|
1库存量
|
|
|
¥8,821.6275
|
|
|
¥8,287.0471
|
|
最低: 1
倍数: 1
|
|
|
|
|
交流/直流转换器 ACTIVE CLAMP FLYBACK
onsemi NCP1568G04DBR2G
- NCP1568G04DBR2G
- onsemi
-
1:
¥41.2563
-
2,418库存量
-
NRND
|
Mouser 零件编号
863-NCP1568G04DBR2G
NRND
|
onsemi
|
交流/直流转换器 ACTIVE CLAMP FLYBACK
|
|
2,418库存量
|
|
|
¥41.2563
|
|
|
¥33.6175
|
|
|
¥31.6061
|
|
|
¥29.5269
|
|
|
查看
|
|
|
¥27.7867
|
|
|
¥28.5664
|
|
|
¥28.2274
|
|
|
¥28.1483
|
|
|
¥27.7867
|
|
最低: 1
倍数: 1
:
2,500
|
|
|
|
|
栅极驱动器 650V 170mohm GaN FET with integrated dri
- LMG3624YREQR
- Texas Instruments
-
1:
¥62.8845
-
1,600库存量
-
新产品
|
Mouser 零件编号
595-LMG3624YREQR
新产品
|
Texas Instruments
|
栅极驱动器 650V 170mohm GaN FET with integrated dri
|
|
1,600库存量
|
|
|
¥62.8845
|
|
|
¥45.3356
|
|
|
¥43.6067
|
|
|
¥35.7871
|
|
|
查看
|
|
|
¥28.7472
|
|
|
¥34.8266
|
|
|
¥33.8774
|
|
|
¥33.6966
|
|
|
¥28.7472
|
|
最低: 1
倍数: 1
:
2,000
|
|
|
|
|
GaN 场效应晶体管 700 V, 270 mOhm typ., 6 A, e-mode PowerGaN transistor
- SGT350R70GTK
- STMicroelectronics
-
1:
¥23.165
-
679库存量
-
新产品
|
Mouser 零件编号
511-SGT350R70GTK
新产品
|
STMicroelectronics
|
GaN 场效应晶体管 700 V, 270 mOhm typ., 6 A, e-mode PowerGaN transistor
|
|
679库存量
|
|
|
¥23.165
|
|
|
¥14.9725
|
|
|
¥10.2604
|
|
|
¥8.2377
|
|
|
¥6.8817
|
|
|
查看
|
|
|
¥7.6953
|
|
|
¥6.2828
|
|
最低: 1
倍数: 1
:
2,500
|
|
|
|
|
GaN 场效应晶体管 CoolGaN Transistor 700 V G5
- IGD70R200D2SAUMA1
- Infineon Technologies
-
1:
¥19.9332
-
1,980库存量
-
新产品
|
Mouser 零件编号
726-IGD70R200D2SAUMA
新产品
|
Infineon Technologies
|
GaN 场效应晶体管 CoolGaN Transistor 700 V G5
|
|
1,980库存量
|
|
|
¥19.9332
|
|
|
¥12.8255
|
|
|
¥8.6897
|
|
|
¥6.9269
|
|
|
¥5.7517
|
|
|
查看
|
|
|
¥6.3732
|
|
|
¥5.1867
|
|
|
¥5.1076
|
|
最低: 1
倍数: 1
:
2,500
|
|
|
|
|
GaN 场效应晶体管 CoolGaN Transistor 700 V G5
- IGD70R270D2SAUMA1
- Infineon Technologies
-
1:
¥17.8653
-
2,088库存量
-
新产品
|
Mouser 零件编号
726-IGD70R270D2SAUMA
新产品
|
Infineon Technologies
|
GaN 场效应晶体管 CoolGaN Transistor 700 V G5
|
|
2,088库存量
|
|
|
¥17.8653
|
|
|
¥11.413
|
|
|
¥7.7179
|
|
|
¥6.1246
|
|
|
¥5.0624
|
|
|
查看
|
|
|
¥5.6161
|
|
|
¥4.5539
|
|
|
¥4.3957
|
|
最低: 1
倍数: 1
:
2,500
|
|
|
|
|
栅极驱动器 CoolGaN Drive HB 600 V G5
- IGI60L1111B1MXUMA1
- Infineon Technologies
-
1:
¥56.161
-
45库存量
-
3,000预期 2026/6/24
-
新产品
|
Mouser 零件编号
726-IGI60L1111B1MXUM
新产品
|
Infineon Technologies
|
栅极驱动器 CoolGaN Drive HB 600 V G5
|
|
45库存量
3,000预期 2026/6/24
|
|
|
¥56.161
|
|
|
¥43.2564
|
|
|
¥40.0359
|
|
|
¥36.4764
|
|
|
查看
|
|
|
¥29.6964
|
|
|
¥34.8266
|
|
|
¥33.7531
|
|
|
¥32.9169
|
|
|
¥29.6964
|
|
最低: 1
倍数: 1
:
3,000
|
|
|
|
|
GaN 场效应晶体管 CoolGaN Bidirectional Switch
- IGK120B041SXTSA1
- Infineon Technologies
-
1:
¥5.2093
-
2,774库存量
-
新产品
|
Mouser 零件编号
726-IGK120B041SXTSA1
新产品
|
Infineon Technologies
|
GaN 场效应晶体管 CoolGaN Bidirectional Switch
|
|
2,774库存量
|
|
|
¥5.2093
|
|
|
¥3.3222
|
|
|
¥2.7007
|
|
|
¥2.5764
|
|
|
¥2.3617
|
|
|
查看
|
|
|
¥2.5538
|
|
|
¥2.1583
|
|
|
¥2.0905
|
|
最低: 1
倍数: 1
:
4,000
|
|
|
|
|
栅极驱动器 100V 1.7mohm GaN FET with integrated dri
- LMG3100R017VBER
- Texas Instruments
-
1:
¥113.6893
-
2,586库存量
-
新产品
|
Mouser 零件编号
595-LMG3100R017VBER
新产品
|
Texas Instruments
|
栅极驱动器 100V 1.7mohm GaN FET with integrated dri
|
|
2,586库存量
|
|
|
¥113.6893
|
|
|
¥89.0214
|
|
|
¥82.8516
|
|
|
¥77.3824
|
|
|
¥77.3824
|
|
最低: 1
倍数: 1
最大: 100
:
2,500
|
|
|
|
|
GaN 场效应晶体管 EPC eGaN FET,100 V, 1.2 milliohm at 5 V(typ), 3.3 mm x 3.3 mm QFN
- EPC2367
- EPC
-
1:
¥60.9635
-
9,680库存量
-
新产品
|
Mouser 零件编号
65-EPC2367
新产品
|
EPC
|
GaN 场效应晶体管 EPC eGaN FET,100 V, 1.2 milliohm at 5 V(typ), 3.3 mm x 3.3 mm QFN
|
|
9,680库存量
|
|
|
¥60.9635
|
|
|
¥41.1885
|
|
|
¥29.945
|
|
|
¥28.5325
|
|
|
¥24.8939
|
|
|
¥23.2441
|
|
最低: 1
倍数: 1
:
3,000
|
|
|
|
|
GaN 场效应晶体管 CoolGaN Transistor 80 V G3 in PQFN 3x5, 1.8 mohm
- IGC025S08S1XTMA1
- Infineon Technologies
-
1:
¥38.0471
-
9,083库存量
-
新产品
|
Mouser 零件编号
726-IGC025S08S1XTMA1
新产品
|
Infineon Technologies
|
GaN 场效应晶体管 CoolGaN Transistor 80 V G3 in PQFN 3x5, 1.8 mohm
|
|
9,083库存量
|
|
|
¥38.0471
|
|
|
¥24.069
|
|
|
¥17.6958
|
|
|
¥15.142
|
|
|
¥14.5544
|
|
|
¥12.3283
|
|
最低: 1
倍数: 1
:
5,000
|
|
|
|
|
GaN 场效应晶体管 MV GAN DISCRETES
- IGC033S10S1XTMA1
- Infineon Technologies
-
1:
¥37.7985
-
8,546库存量
-
新产品
|
Mouser 零件编号
726-IGC033S10S1XTMA1
新产品
|
Infineon Technologies
|
GaN 场效应晶体管 MV GAN DISCRETES
|
|
8,546库存量
|
|
|
¥37.7985
|
|
|
¥23.8204
|
|
|
¥17.6958
|
|
|
¥15.142
|
|
|
¥14.1476
|
|
|
¥12.3283
|
|
最低: 1
倍数: 1
:
5,000
|
|
|
|
|
GaN 场效应晶体管 HV GAN DISCRETES
- IGLT65R025D2AUMA1
- Infineon Technologies
-
1:
¥106.0392
-
4,059库存量
-
1,800预期 2026/7/16
-
新产品
|
Mouser 零件编号
726-IGLT65R025D2AUMA
新产品
|
Infineon Technologies
|
GaN 场效应晶体管 HV GAN DISCRETES
|
|
4,059库存量
1,800预期 2026/7/16
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¥106.0392
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¥78.9983
|
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¥65.8451
|
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¥59.89
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|
查看
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¥49.7087
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|
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¥49.7991
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¥49.7087
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报价
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最低: 1
倍数: 1
:
1,800
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