|
|
分立半导体模块 HybridPACK Drive G2 module with SiC MOSFET
- FS01M5R12A7MA2BHPSA1
- Infineon Technologies
-
1:
¥10,206.7363
-
2库存量
-
新产品
|
Mouser 零件编号
726-FS01M5R12A7MA2BH
新产品
|
Infineon Technologies
|
分立半导体模块 HybridPACK Drive G2 module with SiC MOSFET
|
|
2库存量
|
|
|
¥10,206.7363
|
|
|
¥8,050.4138
|
|
最低: 1
倍数: 1
|
|
Discrete Semiconductor Modules
|
SiC
|
Press Fit
|
HybridPACK
|
|
|
|
IGBT 模块 950 V, 600 A 3-level IGBT module
- F3L600R10W4S7FC22BPSA1
- Infineon Technologies
-
1:
¥1,978.9803
-
11库存量
|
Mouser 零件编号
726-R10W4S7FC22BPSA1
|
Infineon Technologies
|
IGBT 模块 950 V, 600 A 3-level IGBT module
|
|
11库存量
|
|
最低: 1
倍数: 1
|
|
IGBT Modules
|
Si
|
|
|
|
|
|
MOSFET N-CHANNEL DEPLETION MODE
- DN2625DK6-G
- Microchip Technology
-
1:
¥26.0578
-
20,602库存量
|
Mouser 零件编号
689-DN2625DK6-G
|
Microchip Technology
|
MOSFET N-CHANNEL DEPLETION MODE
|
|
20,602库存量
|
|
|
¥26.0578
|
|
|
¥24.2385
|
|
|
¥22.826
|
|
|
¥20.8485
|
|
最低: 1
倍数: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
DFN-8
|
|
|
|
分立半导体模块 2000 V, 60 A Boost EasyPACK 3B CoolSiC MOSFET Module
- DF419MR20W3M1HFB11BPSA1
- Infineon Technologies
-
1:
¥1,993.207
-
10库存量
|
Mouser 零件编号
726-419MR20W3M1HFB11
|
Infineon Technologies
|
分立半导体模块 2000 V, 60 A Boost EasyPACK 3B CoolSiC MOSFET Module
|
|
10库存量
|
|
|
¥1,993.207
|
|
|
¥1,817.1078
|
|
最低: 1
倍数: 1
|
|
Discrete Semiconductor Modules
|
Si
|
|
|
|
|
|
晶闸管模块 THYR / DIODE MODULE DK
- STT1900N16P55XPSA2
- Infineon Technologies
-
1:
¥4,875.1929
-
4库存量
|
Mouser 零件编号
726-STT1900N16P55XP2
|
Infineon Technologies
|
晶闸管模块 THYR / DIODE MODULE DK
|
|
4库存量
|
|
|
¥4,875.1929
|
|
|
¥4,136.4667
|
|
最低: 1
倍数: 1
|
|
Thyristor Modules
|
Si
|
|
|
|
|
|
IGBT 模块 IGBT 1700V 3600A
- FZ3600R17HP4
- Infineon Technologies
-
1:
¥11,167.4849
-
22库存量
-
12预期 2026/7/23
|
Mouser 零件编号
641-FZ3600R17HP4
|
Infineon Technologies
|
IGBT 模块 IGBT 1700V 3600A
|
|
22库存量
12预期 2026/7/23
|
|
|
¥11,167.4849
|
|
|
报价
|
|
|
报价
|
|
最低: 1
倍数: 1
|
|
IGBT Modules
|
Si
|
Screw Mount
|
Module
|
|
|
|
分立半导体模块 THYR / DIODE MODULE DK
- TD590N18KOFXPSA1
- Infineon Technologies
-
1:
¥2,101.0655
-
7库存量
|
Mouser 零件编号
726-TD590N18KOFXPSA1
|
Infineon Technologies
|
分立半导体模块 THYR / DIODE MODULE DK
|
|
7库存量
|
|
|
¥2,101.0655
|
|
|
¥1,947.1369
|
|
最低: 1
倍数: 1
|
|
Discrete Semiconductor Modules
|
Si
|
Screw Mount
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 5-500MHz 2Watts 28Volt Gain 16dB
- MRF158
- MACOM
-
1:
¥827.4086
-
534库存量
|
Mouser 零件编号
937-MRF158
|
MACOM
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 5-500MHz 2Watts 28Volt Gain 16dB
|
|
534库存量
|
|
|
¥827.4086
|
|
|
¥688.283
|
|
|
¥627.2404
|
|
|
查看
|
|
|
报价
|
|
最低: 1
倍数: 1
|
|
RF MOSFET Transistors
|
Si
|
SMD/SMT
|
305A-01
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 5-175MHz 30Watts 50Volt Gain 18dB
- MRF148A
- MACOM
-
1:
¥1,467.9604
-
1,009库存量
|
Mouser 零件编号
937-MRF148A
|
MACOM
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 5-175MHz 30Watts 50Volt Gain 18dB
|
|
1,009库存量
|
|
|
¥1,467.9604
|
|
|
¥1,171.0077
|
|
|
查看
|
|
|
报价
|
|
最低: 1
倍数: 1
|
|
RF MOSFET Transistors
|
Si
|
SMD/SMT
|
211-07-3
|
|
|
|
GaN 场效应晶体管 500W, GaN HEMT, 50V, 2.7-3.1GHz, PULSED,
- CGHV31500F
- MACOM
-
1:
¥12,079.8808
-
20库存量
|
Mouser 零件编号
941-CGHV31500F
|
MACOM
|
GaN 场效应晶体管 500W, GaN HEMT, 50V, 2.7-3.1GHz, PULSED,
|
|
20库存量
|
|
最低: 1
倍数: 1
|
|
GaN FETs
|
GaN
|
Screw Mount
|
440217
|
|
|
|
分立半导体模块 1200V, 20A, SiC Six pack Module GEN 3
- CBB021M12FM3
- Wolfspeed
-
1:
¥981.2581
-
18库存量
|
Mouser 零件编号
941-CBB021M12FM3
|
Wolfspeed
|
分立半导体模块 1200V, 20A, SiC Six pack Module GEN 3
|
|
18库存量
|
|
最低: 1
倍数: 1
|
|
Discrete Semiconductor Modules
|
SiC
|
Screw Mount
|
|
|
|
|
IGBT 模块 IGBT Module 200A 1700V
- FF200R17KE4
- Infineon Technologies
-
1:
¥1,139.0852
-
25库存量
|
Mouser 零件编号
641-FF200R17KE4
|
Infineon Technologies
|
IGBT 模块 IGBT Module 200A 1700V
|
|
25库存量
|
|
|
¥1,139.0852
|
|
|
¥947.4259
|
|
|
¥870.3373
|
|
最低: 1
倍数: 1
|
|
IGBT Modules
|
Si
|
Screw Mount
|
62 mm
|
|
|
|
IGBT 模块 1700 V, 50 A sixpack IGBT module
- FS50R17KE3B17BPSA1
- Infineon Technologies
-
1:
¥653.705
-
33库存量
|
Mouser 零件编号
726-FS50R17KE3B17BPS
|
Infineon Technologies
|
IGBT 模块 1700 V, 50 A sixpack IGBT module
|
|
33库存量
|
|
|
¥653.705
|
|
|
¥540.14
|
|
|
¥489.8437
|
|
最低: 1
倍数: 1
|
|
IGBT Modules
|
Si
|
|
|
|
|
|
分立半导体模块 CoolSiC 1200 V 8 mOhm Trench MOSFET in EasyDUAL
- FF8MR12W1M1HS4PB11BPSA1
- Infineon Technologies
-
1:
¥843.6241
-
60库存量
|
Mouser 零件编号
726-FF8MR12W1M1HS4PB
|
Infineon Technologies
|
分立半导体模块 CoolSiC 1200 V 8 mOhm Trench MOSFET in EasyDUAL
|
|
60库存量
|
|
|
¥843.6241
|
|
|
¥660.4059
|
|
|
¥660.3268
|
|
|
查看
|
|
|
报价
|
|
最低: 1
倍数: 1
|
|
Discrete Semiconductor Modules
|
Si
|
|
|
|
|
|
整流器 STD THYR/DIODEN DISC
- 65DN06B02ELEMXPSA1
- Infineon Technologies
-
1:
¥4,165.1687
-
40库存量
|
Mouser 零件编号
726-65DN06B02ELEMXPS
|
Infineon Technologies
|
整流器 STD THYR/DIODEN DISC
|
|
40库存量
|
|
最低: 1
倍数: 1
|
|
Rectifiers
|
|
Press Fit
|
|
|
|
|
GaN 场效应晶体管 DC-6GHz 28V P3dB 10W @3.3GHz
- T2G6000528-Q3
- Qorvo
-
1:
¥909.5144
-
373库存量
|
Mouser 零件编号
772-T2G6000528-Q3
|
Qorvo
|
GaN 场效应晶体管 DC-6GHz 28V P3dB 10W @3.3GHz
|
|
373库存量
|
|
|
¥909.5144
|
|
|
¥824.5723
|
|
|
¥654.5186
|
|
|
¥592.5042
|
|
最低: 1
倍数: 1
|
|
GaN FETs
|
GaN
|
SMD/SMT
|
NI-200
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 100-500MHz 150Watts 28Volt Gain 8dB
- UF28150J
- MACOM
-
1:
¥5,032.4437
-
40库存量
|
Mouser 零件编号
937-UF28150J
|
MACOM
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 100-500MHz 150Watts 28Volt Gain 8dB
|
|
40库存量
|
|
|
¥5,032.4437
|
|
|
¥4,382.2982
|
|
最低: 1
倍数: 1
|
|
RF MOSFET Transistors
|
Si
|
SMD/SMT
|
375-04
|
|
|
|
二极管模块 THYR / DIODE MODULE DK
- DD170N36KHPSA1
- Infineon Technologies
-
1:
¥1,569.118
-
77库存量
|
Mouser 零件编号
726-DD170N36KHPSA1
|
Infineon Technologies
|
二极管模块 THYR / DIODE MODULE DK
|
|
77库存量
|
|
|
¥1,569.118
|
|
|
¥1,467.1355
|
|
|
查看
|
|
|
报价
|
|
最低: 1
倍数: 1
|
|
Diode Modules
|
Si
|
Screw Mount
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Transistor,<175MHz,50V,150W,CuMollyPkg
- MRF151A
- MACOM
-
1:
¥2,904.0774
-
260库存量
|
Mouser 零件编号
937-MRF151A
|
MACOM
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Transistor,<175MHz,50V,150W,CuMollyPkg
|
|
260库存量
|
|
|
¥2,904.0774
|
|
|
¥2,428.2909
|
|
最低: 1
倍数: 1
|
|
RF MOSFET Transistors
|
Si
|
Screw Mount
|
244-4
|
|
|
|
IGBT 模块 N-CH 1.7KV 620A
Infineon Technologies FZ400R17KE3
- FZ400R17KE3
- Infineon Technologies
-
1:
¥1,446.6147
-
112库存量
|
Mouser 零件编号
641-FZ400R17KE3
|
Infineon Technologies
|
IGBT 模块 N-CH 1.7KV 620A
|
|
112库存量
|
|
|
¥1,446.6147
|
|
|
¥1,188.1272
|
|
最低: 1
倍数: 1
|
|
IGBT Modules
|
Si
|
Screw Mount
|
62 mm
|
|
|
|
IGBT 模块 950 V 400 A EasyPACK module with TRENCHSTOP IGBT7 and CoolSiC Schottky diode
- FS3L400R10W3S7FB11BPSA1
- Infineon Technologies
-
1:
¥1,423.8678
-
23库存量
|
Mouser 零件编号
726-3L400R10W3S7FB11
|
Infineon Technologies
|
IGBT 模块 950 V 400 A EasyPACK module with TRENCHSTOP IGBT7 and CoolSiC Schottky diode
|
|
23库存量
|
|
|
¥1,423.8678
|
|
|
¥1,421.3931
|
|
最低: 1
倍数: 1
|
|
IGBT Modules
|
Si
|
Through Hole
|
|
|
|
|
IGBT 模块 1200 V, 600 A common emitter IGBT module
- FF600R12KE7EHPSA1
- Infineon Technologies
-
1:
¥1,284.4936
-
26库存量
|
Mouser 零件编号
726-FF600R12KE7EHPSA
|
Infineon Technologies
|
IGBT 模块 1200 V, 600 A common emitter IGBT module
|
|
26库存量
|
|
|
¥1,284.4936
|
|
|
¥1,279.3634
|
|
最低: 1
倍数: 1
|
|
IGBT Modules
|
Si
|
Screw Mount
|
|
|
|
|
IGBT 模块 IGBT MODULES 600V
- FS150R06KE3
- Infineon Technologies
-
1:
¥796.8873
-
124库存量
|
Mouser 零件编号
641-FS150R06KE3
|
Infineon Technologies
|
IGBT 模块 IGBT MODULES 600V
|
|
124库存量
|
|
最低: 1
倍数: 1
|
|
IGBT Modules
|
Si
|
Screw Mount
|
Econo 3
|
|
|
|
MOSFET PLN MOS 900V 1300m (VGS=10V) TO-3PN
- TK9J90E,S1E
- Toshiba
-
1:
¥36.3069
-
2,875库存量
|
Mouser 零件编号
757-TK9J90ES1E
|
Toshiba
|
MOSFET PLN MOS 900V 1300m (VGS=10V) TO-3PN
|
|
2,875库存量
|
|
|
¥36.3069
|
|
|
¥20.5999
|
|
|
¥16.7918
|
|
|
¥13.7295
|
|
|
¥13.4018
|
|
最低: 1
倍数: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-3P
|
|
|
|
IGBT 模块 PIM Q0 T-TYPE NPC 80A 1200V SOLDER PINS TIM
- NXH80T120L2Q0S2TG
- onsemi
-
1:
¥647.3318
-
23库存量
|
Mouser 零件编号
863-NXH80T120L2Q0S2T
|
onsemi
|
IGBT 模块 PIM Q0 T-TYPE NPC 80A 1200V SOLDER PINS TIM
|
|
23库存量
|
|
|
¥647.3318
|
|
|
¥562.3897
|
|
|
¥467.1759
|
|
最低: 1
倍数: 1
|
|
IGBT Modules
|
Si
|
Press Fit
|
|
|