晶体管

结果: 1,923
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS 产品类型 技术 安装风格 封装 / 箱体 晶体管极性
STMicroelectronics MOSFET N-channel 600 V, 72 mOhm typ., 45 A MDmesh DM6 Power MOSFET in a PowerFLAT 8x8 H 1,501库存量
最低: 1
倍数: 1
: 3,000

MOSFETs Si SMD/SMT PowerFLAT-5 N-Channel
STMicroelectronics MOSFET N-CH 600V 0.56Ohm 7.5A MDmesh M2 1,754库存量
最低: 1
倍数: 1

MOSFETs Si Through Hole TO-220-3 N-Channel
STMicroelectronics MOSFET N-channel 60 V, 4.2 mOhm typ., 80 A STripFET F7 Power MOSFET in TO-220 package 1,850库存量
最低: 1
倍数: 1

MOSFETs Si Through Hole TO-220-3 N-Channel

STMicroelectronics MOSFET N-channel 600 V, 162 mOhm typ., 17 A MDmesh M6 Power MOSFET in a TO-220 package 767库存量
最低: 1
倍数: 1

MOSFETs Si Through Hole TO-220-3 N-Channel

STMicroelectronics MOSFET N-channel 650 V, 0.15 Ohm typ., 20 A MDmesh M2 Power MOSFET in TO-247 package 657库存量
最低: 1
倍数: 1

MOSFETs Si Through Hole TO-247-3 N-Channel
STMicroelectronics MOSFET N-channel 650 V, 33 mOhm typ., 75 A MDmesh DM6 Power MOSFET in a TO-247 long lea 393库存量
最低: 1
倍数: 1

MOSFETs Si Through Hole N-Channel
STMicroelectronics MOSFET N-channel 800 V, 0.59 Ohm typ., 6 A MDmesh K5 Power MOSFET in a PowerFLAT 5x6 VH 323库存量
3,000预期 2026/8/28
最低: 1
倍数: 1
: 3,000

MOSFETs Si SMD/SMT PowerFLAT-5x6-VHV-8 N-Channel
STMicroelectronics MOSFET Automotive-grade N-channel 60 V, 24 mOhm typ., 10 A STripFET F7 Power MOSFET in 2,840库存量
最低: 1
倍数: 1
: 3,000

MOSFETs Si SMD/SMT PowerFLAT-5x6-4 N-Channel
STMicroelectronics MOSFET Automotive-grade dual N-channel 40 V, 9 mOhm typ., 18 A STripFET F7 Power MOSFET 2,645库存量
最低: 1
倍数: 1
: 3,000

MOSFETs Si SMD/SMT PowerFLAT-5x6-4 N-Channel
STMicroelectronics MOSFET P-channel -30 V, 11 mOhm typ., -45 A STripFET H6 Power MOSFET in a PowerFLAT 5x6 2,867库存量
最低: 1
倍数: 1
: 3,000

MOSFETs Si SMD/SMT PowerFLAT-5x6-8 P-Channel
STMicroelectronics MOSFET N-channel 650 V, 0.32 Ohm typ., 11 A MDmesh M2 Power MOSFET in TO-220 package 250库存量
1,000预期 2026/7/31
最低: 1
倍数: 1

MOSFETs Si Through Hole TO-220-3 N-Channel
STMicroelectronics GaN 场效应晶体管 700 V, 80 mOhm typ., 21.7 A, e-mode PowerGaN transistor 693库存量
最低: 1
倍数: 1
: 3,000

GaN FETs GaN SMD/SMT PowerFLAT-8
STMicroelectronics MOSFET Automotive-grade N-channel 1200 V, 1.65 Ohm typ., 6 A MDmesh K5 Power MOSFET in an H2PAK-2 HC package 1,095库存量
最低: 1
倍数: 1
: 1,000

MOSFETs
STMicroelectronics MOSFET Automotive-grade N-channel 40 V, 2.4 mOhm typ., 120 A STripFET F6 Power MOSFET i 2,387库存量
最低: 1
倍数: 1
: 2,500

MOSFETs Si SMD/SMT PowerFLAT-5x6-8 N-Channel
STMicroelectronics MOSFET N-channel 600 V, 340 mOhm typ., 11 A MDmesh M2 EP Power MOSFET in a DPAK package 2,461库存量
最低: 1
倍数: 1
: 2,500

MOSFETs Si SMD/SMT DPAK-3 (TO-252-3) N-Channel
STMicroelectronics MOSFET N-Ch 600V 0.28Ohm 11A Mdmesh II I2PAK 883库存量
最低: 1
倍数: 1

MOSFETs Si Through Hole TO-262-3 N-Channel
STMicroelectronics MOSFET N-channel 600 V, 140 mOhm typ., 20 A MDmesh M2 Power MOSFET in a TO-220FP ultra 922库存量
最低: 1
倍数: 1

MOSFETs Si Through Hole TO-220-3 N-Channel
STMicroelectronics MOSFET N-channel 650 V, 0.275 Ohm typ., 12 A MDmesh M2 Power MOSFET in a TO-220FP ultra 978库存量
最低: 1
倍数: 1

MOSFETs Si Through Hole TO-220-3 N-Channel


STMicroelectronics 绝缘栅双极晶体管(IGBT) Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a TO247-4 pac 564库存量
最低: 1
倍数: 1

IGBT Transistors Si Through Hole
STMicroelectronics GaN 场效应晶体管 700 V, 53 mOhm typ., 26 A, e-mode PowerGaN transistor 348库存量
最低: 1
倍数: 1
: 1,800

GaN FETs GaN SMD/SMT TO-LL-11
STMicroelectronics GaN 场效应晶体管 700 V, 60 mOhm typ., 29 A, e-mode PowerGaN transistor 675库存量
最低: 1
倍数: 1
: 3,000

GaN FETs GaN SMD/SMT PowerFLAT-8
STMicroelectronics GaN 场效应晶体管 700 V, 270 mOhm typ., 6 A, e-mode PowerGaN transistor 679库存量
最低: 1
倍数: 1
: 2,500

GaN FETs GaN SMD/SMT DPAK-3
STMicroelectronics MOSFET N-channel 600 V, 51 mOhm typ., 39 A MDmesh DM9 Power MOSFET 235库存量
最低: 1
倍数: 1
: 3,000

MOSFETs Si SMD/SMT PowerFLAT-5 N-Channel
STMicroelectronics MOSFET N-channel 600 V 32 mOhm typ. 62 A MDmesh M9 Power MOSFET in a TO-247 long leads 266库存量
最低: 1
倍数: 1
最大: 50

MOSFETs Si Through Hole TO-247-3 N-Channel
STMicroelectronics 射频金属氧化物半导体场效应(RF MOSFET)晶体管 400 W, 50 V, 0.4 to 1 GHz RF power LDMOS transistor 110库存量
最低: 1
倍数: 1
: 120

RF MOSFET Transistors Si SMD/SMT B4E-5 N-Channel