晶体管

结果: 1,923
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS 产品类型 技术 安装风格 封装 / 箱体 晶体管极性
STMicroelectronics IGBT 模块 ACEPACK 2 converter inverter brake, 1200 V, 25 A trench gate field-stop IGBT M s 33库存量
最低: 1
倍数: 1

IGBT Modules Si Through Hole ACEPACK2
STMicroelectronics 射频金属氧化物半导体场效应(RF MOSFET)晶体管 120 W 50 V RF power LDMOS transistor from HF to 1.5 GHz 18库存量
最低: 1
倍数: 1
: 100

RF MOSFET Transistors Si SMD/SMT LBB-5 Dual N-Channel
STMicroelectronics MOSFET N-channel 600 V 0.190 ohm 16A Mdmesh 1,019库存量
最低: 1
倍数: 1
: 1,000

MOSFETs Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel
STMicroelectronics MOSFET N-Ch 650 Volt 5 Amp 919库存量
最低: 1
倍数: 1
: 1,000

MOSFETs Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel
STMicroelectronics MOSFET N-Ch 950V SuperMESH3 Zener-Protected 10A 374库存量
最低: 1
倍数: 1

MOSFETs Si Through Hole TO-220-3 N-Channel
STMicroelectronics MOSFET N-Ch 800 V 0.95 Ohm 6 A Zener-protecte 1,841库存量
最低: 1
倍数: 1

MOSFETs Si Through Hole TO-251-3 N-Channel
STMicroelectronics MOSFET N-Ch, 620V-2.2ohms 2.7A 2,988库存量
最低: 1
倍数: 1

MOSFETs Si Through Hole TO-251-3 N-Channel

STMicroelectronics MOSFET POWER MOSFET N-CH 500V 13A 425库存量
最低: 1
倍数: 1

MOSFETs Si Through Hole TO-247-3 N-Channel
STMicroelectronics 射频金属氧化物半导体场效应(RF MOSFET)晶体管 180 W, 28 V, 1.3 to 1.6 GHz RF power LDMOS transistor 20库存量
最低: 1
倍数: 1
: 120

RF MOSFET Transistors Si SMD/SMT B4E-5 N-Channel
STMicroelectronics MOSFET N-Ch, 620V-1.1ohms 5.5A 1,671库存量
最低: 1
倍数: 1

MOSFETs Si Through Hole TO-220-3 N-Channel
STMicroelectronics MOSFET N-channel 600 V 0.3 20 Ohm 10A MDmesh II 2,200库存量
最低: 1
倍数: 1
: 3,000

MOSFETs Si SMD/SMT PowerFLAT-8x8-5 N-Channel
STMicroelectronics MOSFET N-Ch 600V 0.160 Ohm 19A HV Mdmesh II 2,092库存量
最低: 1
倍数: 1
: 3,000

MOSFETs Si SMD/SMT PowerFLAT-8x8-HV-5 N-Channel
STMicroelectronics MOSFET N-Ch 600V 0.63 6.5A MDmesh II Power MO 2,141库存量
最低: 1
倍数: 1
: 2,500

MOSFETs Si SMD/SMT DPAK-3 (TO-252-3) N-Channel
STMicroelectronics 达林顿晶体管 Eight NPN Array 754库存量
最低: 1
倍数: 1

Darlington Transistors Through Hole PDIP-18 NPN
STMicroelectronics MOSFET N-Ch 600 Volt 5 Amp 1,997库存量
最低: 1
倍数: 1

MOSFETs Si Through Hole TO-251-3 N-Channel
STMicroelectronics MOSFET N-Ch 800V 2.8Ohm typ 2.5A Zener-protecte 2,731库存量
最低: 1
倍数: 1

MOSFETs Si Through Hole TO-251-3 N-Channel
STMicroelectronics MOSFET模块 ACEPACK 2 power module triple boost 650V 49 mOhm half-bridge 23.5mOhm SiC MOSFET 36库存量
最低: 1
倍数: 1

MOSFET Modules Press Fit ACEPACK
STMicroelectronics MOSFET模块 ACEPACK 2 power module, 3-level topology, SiC Power MOSFETs 750 & 1200V 100 A 18库存量
最低: 1
倍数: 1

MOSFET Modules SiC Press Fit 56.7 mm x 48 mm N-Channel
STMicroelectronics MOSFET模块 Automotive-grade ACEPACK DMT-32 power module, 1200 V, 47.5 mOhm SiC MOSFET NTC 119库存量
最低: 1
倍数: 1

MOSFET Modules SiC Press Fit ACEPACK DMT-32
STMicroelectronics MOSFET模块 Automotive-grade ACEPACK DMT-32 power module, sixpac topology, 1200 V, 47.5 mOhm typ. SiC Power MOSFET with NTC 124库存量
最低: 1
倍数: 1

MOSFET Modules Press Fit
STMicroelectronics MOSFET模块 Automotive-grade ACEPACK DMT-32 power module, 3-phase four wire PFC topology, 1200 V, 84 mOhm typ. SiC Power MOSFET with rectifier diode and NTC 127库存量
最低: 1
倍数: 1

MOSFET Modules Press Fit
STMicroelectronics 碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247-4 package 632库存量
最低: 1
倍数: 1

SiC MOSFETS SiC Through Hole HiP247-3 N-Channel
STMicroelectronics 碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 16 mOhm typ., 112 A in an H2PAK-7 package 448库存量
最低: 1
倍数: 1
: 1,000

SiC MOSFETS SiC SMD/SMT H2PAK-7 N-Channel
STMicroelectronics 碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HU3PAK package 150库存量
600预期 2026/9/25
最低: 1
倍数: 1
: 600

SiC MOSFETS SiC SMD/SMT HU3PAK-7 N-Channel
STMicroelectronics 碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an H2PAK-7 package 872库存量
最低: 1
倍数: 1
: 1,000

SiC MOSFETS SiC SMD/SMT H2PAK-7 N-Channel