晶体管

结果: 1,919
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS 产品类型 技术 安装风格 封装 / 箱体 晶体管极性
STMicroelectronics MOSFET N-Ch 800V 2.8Ohm typ 2.5A Zener-protecte 2,731库存量
最低: 1
倍数: 1

MOSFETs Si Through Hole TO-251-3 N-Channel

STMicroelectronics MOSFET N-Ch 60 Volt 4 AMP 32,099库存量
最低: 1
倍数: 1
: 4,000

MOSFETs Si SMD/SMT SOT-223-4 N-Channel
STMicroelectronics MOSFET N-Channel 40 V StripFET II Pwr Mos 850库存量
最低: 1
倍数: 1

MOSFETs Si Through Hole TO-220-3 N-Channel
STMicroelectronics MOSFET N-channel 800 V, 1.0 Ohm typ., 5 A MDmesh K6 Power MOSFET 997库存量
最低: 1
倍数: 1

MOSFETs Si Through Hole TO-220FP-3 N-Channel
STMicroelectronics MOSFET N-channel 800 V, 515 mOhm typ., 7 A MDmesh K6 Power MOSFET 1,038库存量
最低: 1
倍数: 1

MOSFETs Si Through Hole TO-220FP-3 N-Channel
STMicroelectronics 绝缘栅双极晶体管(IGBT) Automotive-grade trench gate field-stop 650 V, 30 A low-loss M series IGBT 540库存量
600预期 2026/10/1
最低: 1
倍数: 1

IGBTs Si Through Hole TO-247-3
STMicroelectronics MOSFET Automotive N-channel 40 V, 0.48 mOhm max., 672 A STripFET F8 Power MOSFET 486库存量
2,000预期 2026/10/9
最低: 1
倍数: 1
: 2,000

MOSFETs
STMicroelectronics MOSFET N-channel logic level 60 V, 2.5 mOhm max., 160 A, STripFET F7 Power MOSFET 719库存量
最低: 1
倍数: 1
: 3,000

MOSFETs
STMicroelectronics 双极晶体管 - 双极结型晶体管(BJT) Rad-Hard 50 V, 0.8 A NPN transistor - Engineering model 97库存量
最低: 1
倍数: 1
BJTs - Bipolar Transistors Si SMD/SMT UB-4 NPN
STMicroelectronics 双极晶体管 - 双极结型晶体管(BJT) Rad-Hard 60 V, 0.6 A PNP transistor - Engineering model 21库存量
最低: 1
倍数: 1
BJTs - Bipolar Transistors Si SMD/SMT UB-4 PNP
STMicroelectronics 双极晶体管 - 双极结型晶体管(BJT) Rad-Hard 80 V, 5 A NPN transistor - Engineering model 14库存量
最低: 1
倍数: 1
BJTs - Bipolar Transistors Si SMD/SMT SMD.5 NPN


STMicroelectronics 绝缘栅双极晶体管(IGBT) Automotive-grade trench gate field-stop 1200 V 40 A low-loss MS series IGBT in a 521库存量
最低: 1
倍数: 1

IGBT Transistors Si Through Hole TO-247-3
STMicroelectronics 碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package 596库存量
最低: 1
倍数: 1

SiC MOSFETS SiC Through Hole HiP-247-4 N-Channel


STMicroelectronics 碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package 455库存量
最低: 1
倍数: 1

SiC MOSFETS SiC Through Hole HiP-247-4 N-Channel


STMicroelectronics 碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package 362库存量
最低: 1
倍数: 1

SiC MOSFETS SiC Through Hole Hip247-4 N-Channel


STMicroelectronics 碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package 278库存量
1,200预期 2026/8/31
最低: 1
倍数: 1

SiC MOSFETS SiC Through Hole HiP-247-4 N-Channel


STMicroelectronics 碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package 403库存量
最低: 1
倍数: 1

SiC MOSFETS SiC Through Hole HiP247-3 N-Channel


STMicroelectronics 碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A 246库存量
最低: 1
倍数: 1

SiC MOSFETS SiC Through Hole HiP-247-4 N-Channel


STMicroelectronics 碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A 357库存量
600预期 2026/7/31
最低: 1
倍数: 1

SiC MOSFETS SiC Through Hole HiP-247-4 N-Channel


STMicroelectronics 碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package 499库存量
最低: 1
倍数: 1

SiC MOSFETS SiC Through Hole HiP-247-3 N-Channel


STMicroelectronics 碳化硅MOSFET Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package 517库存量
最低: 1
倍数: 1

SiC MOSFETS SiC Through Hole HiP247-4 N-Channel


STMicroelectronics 碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package 481库存量
最低: 1
倍数: 1

SiC MOSFETS SiC Through Hole HiP247-4 N-Channel


STMicroelectronics 碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package 284库存量
1,200预期 2026/8/10
最低: 1
倍数: 1

SiC MOSFETS SiC Through Hole HiP-247-4 N-Channel
STMicroelectronics MOSFET Automotive-grade N-channel 650V, 56 mOhm typ., 53 A MDmesh DM6 Power MOSFET 177库存量
最低: 1
倍数: 1
: 200

MOSFETs Si SMD/SMT ACEPACK SMIT-9 N-Channel
STMicroelectronics 绝缘栅双极晶体管(IGBT) Automotive ACEPACK SMIT half-bridge 650 V, 80 A HB series IGBT with diode 189库存量
最低: 1
倍数: 1
: 200

IGBT Transistors Si SMD/SMT ACEPACK-5