|
|
MOSFET N-Ch 800V 2.8Ohm typ 2.5A Zener-protecte
- STU3N80K5
- STMicroelectronics
-
1:
¥16.5432
-
2,731库存量
|
Mouser 零件编号
511-STU3N80K5
|
STMicroelectronics
|
MOSFET N-Ch 800V 2.8Ohm typ 2.5A Zener-protecte
|
|
2,731库存量
|
|
|
¥16.5432
|
|
|
¥7.4241
|
|
|
¥7.119
|
|
|
¥5.7856
|
|
|
查看
|
|
|
¥5.0398
|
|
|
¥4.5878
|
|
最低: 1
倍数: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-251-3
|
N-Channel
|
|
|
|
MOSFET N-Ch 60 Volt 4 AMP
- STN3NF06L
- STMicroelectronics
-
1:
¥14.7239
-
32,099库存量
|
Mouser 零件编号
511-STN3NF06L
|
STMicroelectronics
|
MOSFET N-Ch 60 Volt 4 AMP
|
|
32,099库存量
|
|
|
¥14.7239
|
|
|
¥9.266
|
|
|
¥6.0794
|
|
|
¥4.8251
|
|
|
¥3.7742
|
|
|
查看
|
|
|
¥4.2827
|
|
|
¥3.9211
|
|
|
¥3.3787
|
|
|
¥3.2996
|
|
最低: 1
倍数: 1
:
4,000
|
|
MOSFETs
|
Si
|
SMD/SMT
|
SOT-223-4
|
N-Channel
|
|
|
|
MOSFET N-Channel 40 V StripFET II Pwr Mos
- STP150NF04
- STMicroelectronics
-
1:
¥23.5718
-
850库存量
|
Mouser 零件编号
511-STP150NF04
|
STMicroelectronics
|
MOSFET N-Channel 40 V StripFET II Pwr Mos
|
|
850库存量
|
|
|
¥23.5718
|
|
|
¥15.5488
|
|
|
¥12.0797
|
|
|
¥10.0909
|
|
|
查看
|
|
|
¥9.266
|
|
|
¥8.7688
|
|
最低: 1
倍数: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
|
|
|
MOSFET N-channel 800 V, 1.0 Ohm typ., 5 A MDmesh K6 Power MOSFET
- STF80N1K1K6
- STMicroelectronics
-
1:
¥21.2553
-
997库存量
-
新产品
|
Mouser 零件编号
511-STF80N1K1K6
新产品
|
STMicroelectronics
|
MOSFET N-channel 800 V, 1.0 Ohm typ., 5 A MDmesh K6 Power MOSFET
|
|
997库存量
|
|
|
¥21.2553
|
|
|
¥10.4186
|
|
|
¥9.266
|
|
|
¥7.4693
|
|
|
查看
|
|
|
¥6.3732
|
|
|
¥5.8308
|
|
|
¥5.5935
|
|
最低: 1
倍数: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220FP-3
|
N-Channel
|
|
|
|
MOSFET N-channel 800 V, 515 mOhm typ., 7 A MDmesh K6 Power MOSFET
- STF80N600K6
- STMicroelectronics
-
1:
¥31.0185
-
1,038库存量
-
新产品
|
Mouser 零件编号
511-STF80N600K6
新产品
|
STMicroelectronics
|
MOSFET N-channel 800 V, 515 mOhm typ., 7 A MDmesh K6 Power MOSFET
|
|
1,038库存量
|
|
|
¥31.0185
|
|
|
¥20.1818
|
|
|
¥14.1476
|
|
|
¥11.8311
|
|
|
查看
|
|
|
¥11.0062
|
|
|
¥10.3395
|
|
最低: 1
倍数: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220FP-3
|
N-Channel
|
|
|
|
绝缘栅双极晶体管(IGBT) Automotive-grade trench gate field-stop 650 V, 30 A low-loss M series IGBT
- STGWA30M65DF2AG
- STMicroelectronics
-
1:
¥36.725
-
540库存量
-
600预期 2026/10/1
-
新产品
|
Mouser 零件编号
511-STGWA30M65DF2AG
新产品
|
STMicroelectronics
|
绝缘栅双极晶体管(IGBT) Automotive-grade trench gate field-stop 650 V, 30 A low-loss M series IGBT
|
|
540库存量
600预期 2026/10/1
|
|
|
¥36.725
|
|
|
¥25.2329
|
|
|
¥18.7806
|
|
|
¥15.7183
|
|
|
¥13.6504
|
|
最低: 1
倍数: 1
|
|
IGBTs
|
Si
|
Through Hole
|
TO-247-3
|
|
|
|
|
MOSFET Automotive N-channel 40 V, 0.48 mOhm max., 672 A STripFET F8 Power MOSFET
- STK615N4F8AG
- STMicroelectronics
-
1:
¥42.7592
-
486库存量
-
2,000预期 2026/10/9
-
新产品
|
Mouser 零件编号
511-STK615N4F8AG
新产品
|
STMicroelectronics
|
MOSFET Automotive N-channel 40 V, 0.48 mOhm max., 672 A STripFET F8 Power MOSFET
|
|
486库存量
2,000预期 2026/10/9
|
|
|
¥42.7592
|
|
|
¥28.3743
|
|
|
¥20.1818
|
|
|
¥17.7862
|
|
|
¥16.7127
|
|
最低: 1
倍数: 1
:
2,000
|
|
MOSFETs
|
|
|
|
|
|
|
|
MOSFET N-channel logic level 60 V, 2.5 mOhm max., 160 A, STripFET F7 Power MOSFET
- STL160N6LF7
- STMicroelectronics
-
1:
¥18.532
-
719库存量
-
新产品
|
Mouser 零件编号
511-STL160N6LF7
新产品
|
STMicroelectronics
|
MOSFET N-channel logic level 60 V, 2.5 mOhm max., 160 A, STripFET F7 Power MOSFET
|
|
719库存量
|
|
|
¥18.532
|
|
|
¥11.9102
|
|
|
¥8.0343
|
|
|
¥6.3958
|
|
|
¥5.1867
|
|
|
查看
|
|
|
¥5.8647
|
|
|
¥4.859
|
|
|
¥4.633
|
|
最低: 1
倍数: 1
:
3,000
|
|
MOSFETs
|
|
|
|
|
|
|
|
双极晶体管 - 双极结型晶体管(BJT) Rad-Hard 50 V, 0.8 A NPN transistor - Engineering model
- 2N2222AUB1
- STMicroelectronics
-
1:
¥811.6903
-
97库存量
|
Mouser 零件编号
511-2N2222AUB1
|
STMicroelectronics
|
双极晶体管 - 双极结型晶体管(BJT) Rad-Hard 50 V, 0.8 A NPN transistor - Engineering model
|
|
97库存量
|
|
|
¥811.6903
|
|
|
¥763.2246
|
|
|
¥647.9194
|
|
|
报价
|
|
|
报价
|
|
最低: 1
倍数: 1
|
|
BJTs - Bipolar Transistors
|
Si
|
SMD/SMT
|
UB-4
|
NPN
|
|
|
|
双极晶体管 - 双极结型晶体管(BJT) Rad-Hard 60 V, 0.6 A PNP transistor - Engineering model
- 2N2907AUB1
- STMicroelectronics
-
1:
¥978.8625
-
21库存量
|
Mouser 零件编号
511-2N2907AUB1
|
STMicroelectronics
|
双极晶体管 - 双极结型晶体管(BJT) Rad-Hard 60 V, 0.6 A PNP transistor - Engineering model
|
|
21库存量
|
|
最低: 1
倍数: 1
|
|
BJTs - Bipolar Transistors
|
Si
|
SMD/SMT
|
UB-4
|
PNP
|
|
|
|
双极晶体管 - 双极结型晶体管(BJT) Rad-Hard 80 V, 5 A NPN transistor - Engineering model
- 2N5154S1
- STMicroelectronics
-
1:
¥1,937.4528
-
14库存量
|
Mouser 零件编号
511-2N5154S1
|
STMicroelectronics
|
双极晶体管 - 双极结型晶体管(BJT) Rad-Hard 80 V, 5 A NPN transistor - Engineering model
|
|
14库存量
|
|
|
¥1,937.4528
|
|
|
¥1,424.4554
|
|
最低: 1
倍数: 1
|
|
BJTs - Bipolar Transistors
|
Si
|
SMD/SMT
|
SMD.5
|
NPN
|
|
|
|
绝缘栅双极晶体管(IGBT) Automotive-grade trench gate field-stop 1200 V 40 A low-loss MS series IGBT in a
- GWA40MS120DF4AG
- STMicroelectronics
-
1:
¥59.2233
-
521库存量
|
Mouser 零件编号
511-GWA40MS120DF4AG
|
STMicroelectronics
|
绝缘栅双极晶体管(IGBT) Automotive-grade trench gate field-stop 1200 V 40 A low-loss MS series IGBT in a
|
|
521库存量
|
|
|
¥59.2233
|
|
|
¥39.9568
|
|
|
¥28.9506
|
|
|
¥28.6229
|
|
|
¥25.8883
|
|
最低: 1
倍数: 1
|
|
IGBT Transistors
|
Si
|
Through Hole
|
TO-247-3
|
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package
- SCT015W120G3-4AG
- STMicroelectronics
-
1:
¥221.0167
-
596库存量
|
Mouser 零件编号
511-SCT015W120G3-4AG
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package
|
|
596库存量
|
|
|
¥221.0167
|
|
|
¥176.9241
|
|
|
¥153.0246
|
|
|
¥144.8321
|
|
|
报价
|
|
|
报价
|
|
最低: 1
倍数: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-4
|
N-Channel
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package
- SCT018W65G3-4AG
- STMicroelectronics
-
1:
¥154.5162
-
455库存量
|
Mouser 零件编号
511-SCT018W65G3-4AG
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package
|
|
455库存量
|
|
|
¥154.5162
|
|
|
¥117.6217
|
|
|
¥98.0162
|
|
|
¥87.349
|
|
|
¥81.6425
|
|
最低: 1
倍数: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-4
|
N-Channel
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package
- SCT020W120G3-4AG
- STMicroelectronics
-
1:
¥167.3304
-
362库存量
|
Mouser 零件编号
511-SCT020W120G3-4AG
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package
|
|
362库存量
|
|
|
¥167.3304
|
|
|
¥104.638
|
|
|
¥99.5078
|
|
最低: 1
倍数: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
Hip247-4
|
N-Channel
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
- SCT025W120G3-4AG
- STMicroelectronics
-
1:
¥169.3983
-
278库存量
-
1,200预期 2026/8/31
|
Mouser 零件编号
511-SCT025W120G3-4AG
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
|
|
278库存量
1,200预期 2026/8/31
|
|
|
¥169.3983
|
|
|
¥120.4354
|
|
|
¥103.8131
|
|
|
¥93.3041
|
|
最低: 1
倍数: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-4
|
N-Channel
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package
- SCT025W120G3AG
- STMicroelectronics
-
1:
¥156.7423
-
403库存量
|
Mouser 零件编号
511-SCT025W120G3AG
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package
|
|
403库存量
|
|
|
¥156.7423
|
|
|
¥97.519
|
|
|
¥91.4848
|
|
最低: 1
倍数: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP247-3
|
N-Channel
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
- SCT027W65G3-4AG
- STMicroelectronics
-
1:
¥136.9786
-
246库存量
|
Mouser 零件编号
511-SCT027W65G3-4AG
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
|
|
246库存量
|
|
|
¥136.9786
|
|
|
¥104.5476
|
|
|
¥72.6251
|
|
|
¥61.7884
|
|
最低: 1
倍数: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-4
|
N-Channel
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A
- SCT040W120G3-4AG
- STMicroelectronics
-
1:
¥116.3787
-
357库存量
-
600预期 2026/7/31
|
Mouser 零件编号
511-SCT040W120G3-4AG
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A
|
|
357库存量
600预期 2026/7/31
|
|
|
¥116.3787
|
|
|
¥81.3939
|
|
|
¥61.6189
|
|
|
¥54.4321
|
|
|
¥54.3417
|
|
最低: 1
倍数: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-4
|
N-Channel
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package
- SCT040W120G3AG
- STMicroelectronics
-
1:
¥114.8871
-
499库存量
|
Mouser 零件编号
511-SCT040W120G3AG
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package
|
|
499库存量
|
|
|
¥114.8871
|
|
|
¥80.7272
|
|
|
¥62.4551
|
|
最低: 1
倍数: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-3
|
N-Channel
|
|
|
|
碳化硅MOSFET Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
- SCT040W65G3-4
- STMicroelectronics
-
1:
¥95.4511
-
517库存量
|
Mouser 零件编号
511-SCT040W65G3-4
|
STMicroelectronics
|
碳化硅MOSFET Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
|
|
517库存量
|
|
|
¥95.4511
|
|
|
¥57.3249
|
|
|
¥51.1212
|
|
|
¥49.1324
|
|
最低: 1
倍数: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP247-4
|
N-Channel
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
- SCT040W65G3-4AG
- STMicroelectronics
-
1:
¥110.9999
-
481库存量
|
Mouser 零件编号
511-SCT040W65G3-4AG
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
|
|
481库存量
|
|
|
¥110.9999
|
|
|
¥80.3995
|
|
|
¥68.817
|
|
|
¥59.3024
|
|
最低: 1
倍数: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP247-4
|
N-Channel
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
- SCT070W120G3-4AG
- STMicroelectronics
-
1:
¥119.8591
-
284库存量
-
1,200预期 2026/8/10
|
Mouser 零件编号
511-SCT070W120G3-4AG
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
|
|
284库存量
1,200预期 2026/8/10
|
|
|
¥119.8591
|
|
|
¥91.4057
|
|
|
¥70.7267
|
|
|
¥59.89
|
|
最低: 1
倍数: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-4
|
N-Channel
|
|
|
|
MOSFET Automotive-grade N-channel 650V, 56 mOhm typ., 53 A MDmesh DM6 Power MOSFET
- SH63N65DM6AG
- STMicroelectronics
-
1:
¥200.914
-
177库存量
|
Mouser 零件编号
511-SH63N65DM6AG
|
STMicroelectronics
|
MOSFET Automotive-grade N-channel 650V, 56 mOhm typ., 53 A MDmesh DM6 Power MOSFET
|
|
177库存量
|
|
|
¥200.914
|
|
|
¥148.0639
|
|
|
¥104.2199
|
|
|
¥104.2199
|
|
|
¥100.6604
|
|
最低: 1
倍数: 1
:
200
|
|
MOSFETs
|
Si
|
SMD/SMT
|
ACEPACK SMIT-9
|
N-Channel
|
|
|
|
绝缘栅双极晶体管(IGBT) Automotive ACEPACK SMIT half-bridge 650 V, 80 A HB series IGBT with diode
- STGSH80HB65DAG
- STMicroelectronics
-
1:
¥170.2345
-
189库存量
|
Mouser 零件编号
511-STGSH80HB65DAG
|
STMicroelectronics
|
绝缘栅双极晶体管(IGBT) Automotive ACEPACK SMIT half-bridge 650 V, 80 A HB series IGBT with diode
|
|
189库存量
|
|
|
¥170.2345
|
|
|
¥121.6784
|
|
|
¥104.2199
|
|
|
¥104.2199
|
|
最低: 1
倍数: 1
:
200
|
|
IGBT Transistors
|
Si
|
SMD/SMT
|
ACEPACK-5
|
|
|