|
|
MOSFET Dual EPAD(R) N-Ch
- ALD110900PAL
- Advanced Linear Devices
-
1:
¥67.7435
-
4库存量
|
Mouser 零件编号
585-ALD110900PAL
|
Advanced Linear Devices
|
MOSFET Dual EPAD(R) N-Ch
|
|
4库存量
|
|
|
¥67.7435
|
|
|
¥54.1835
|
|
|
¥43.7536
|
|
|
¥38.872
|
|
|
¥34.4876
|
|
最低： 1
倍数： 1
|
|
|
Si
|
Through Hole
|
PDIP-8
|
N-Channel
|
2 Channel
|
10 V
|
12 mA
|
500 Ohms, 500 Ohms
|
- 12 V, 12 V
|
20 mV
|
0 C
|
+ 70 C
|
500 mW
|
Depletion
|
|
Tube
|
|
|
|
MOSFET Dual EPAD(R) N-Ch
- ALD110900APAL
- Advanced Linear Devices
-
1:
¥94.2985
-
46库存量
|
Mouser 零件编号
585-ALD110900APAL
|
Advanced Linear Devices
|
MOSFET Dual EPAD(R) N-Ch
|
|
46库存量
|
|
|
¥94.2985
|
|
|
¥54.014
|
|
|
¥49.8782
|
|
|
¥48.6352
|
|
最低： 1
倍数： 1
|
|
|
Si
|
Through Hole
|
PDIP-8
|
N-Channel
|
2 Channel
|
10 V
|
12 mA
|
500 Ohms, 500 Ohms
|
- 12 V, 12 V
|
0 V
|
0 C
|
+ 70 C
|
500 mW
|
Depletion
|
|
Tube
|
|
|
|
MOSFET Dual N-Ch EPAD FET Array VGS=0.0V
- ALD212900PAL
- Advanced Linear Devices
-
1:
¥77.6649
-
34库存量
|
Mouser 零件编号
585-ALD212900PAL
|
Advanced Linear Devices
|
MOSFET Dual N-Ch EPAD FET Array VGS=0.0V
|
|
34库存量
|
|
|
¥77.6649
|
|
|
¥43.4259
|
|
|
¥39.8664
|
|
|
¥37.4708
|
|
最低： 1
倍数： 1
|
|
|
Si
|
Through Hole
|
PDIP-8
|
N-Channel
|
2 Channel
|
10 V
|
79 mA
|
14 Ohms
|
- 12 V, 12 V
|
20 mV
|
0 C
|
+ 70 C
|
500 mW
|
Depletion
|
|
Tube
|
|
|
|
MOSFET Dual N-Ch EPAD FET Array VGS=0.0V
- ALD212900APAL
- Advanced Linear Devices
-
1:
¥93.7109
-
16库存量
|
Mouser 零件编号
585-ALD212900APAL
|
Advanced Linear Devices
|
MOSFET Dual N-Ch EPAD FET Array VGS=0.0V
|
|
16库存量
|
|
|
¥93.7109
|
|
|
¥68.1729
|
|
|
¥56.7938
|
|
|
¥50.6353
|
|
|
¥47.3244
|
|
最低： 1
倍数： 1
|
|
|
Si
|
Through Hole
|
PDIP-8
|
N-Channel
|
2 Channel
|
10 V
|
79 mA
|
14 Ohms
|
- 12 V, 12 V
|
0 V
|
0 C
|
+ 70 C
|
500 mW
|
Depletion
|
|
Tube
|
|
|
|
MOSFET Dual N-Ch Matched Pr VGS=0.0V
- ALD212902PAL
- Advanced Linear Devices
-
1:
¥76.4332
-
50预期 2026/8/19
|
Mouser 零件编号
585-ALD212902PAL
|
Advanced Linear Devices
|
MOSFET Dual N-Ch Matched Pr VGS=0.0V
|
|
50预期 2026/8/19
|
|
|
¥76.4332
|
|
|
¥53.9349
|
|
|
¥44.9966
|
|
|
¥40.0359
|
|
|
¥37.4708
|
|
最低： 1
倍数： 1
|
|
|
Si
|
Through Hole
|
PDIP-8
|
N-Channel
|
2 Channel
|
10 V
|
79 mA
|
14 Ohms
|
- 12 V, 12 V
|
180 mV
|
0 C
|
+ 70 C
|
500 mW
|
Enhancement
|
EPAD
|
Tube
|
|
|
|
MOSFET Dual N-Ch Matched Pr VGS=0.0V
- ALD212904PAL
- Advanced Linear Devices
-
50:
¥56.6356
-
无库存
|
Mouser 零件编号
585-ALD212904PAL
|
Advanced Linear Devices
|
MOSFET Dual N-Ch Matched Pr VGS=0.0V
|
|
无库存
|
|
|
¥56.6356
|
|
|
¥47.2453
|
|
|
¥42.036
|
|
|
¥39.3466
|
|
最低： 50
倍数： 50
|
|
|
Si
|
Through Hole
|
PDIP-8
|
N-Channel
|
2 Channel
|
10.6 V
|
80 mA
|
14 Ohms
|
- 12 V, 12 V
|
420 mV
|
0 C
|
+ 70 C
|
500 mW
|
Enhancement
|
EPAD
|
Tube
|
|
|
|
MOSFET Dual N-Ch Matched Pr VGS=0.0V
- ALD212908APAL
- Advanced Linear Devices
-
50:
¥81.7216
-
无库存
|
Mouser 零件编号
585-ALD212908APAL
|
Advanced Linear Devices
|
MOSFET Dual N-Ch Matched Pr VGS=0.0V
|
|
无库存
|
|
|
¥81.7216
|
|
|
¥68.1616
|
|
|
¥60.7149
|
|
|
¥56.7486
|
|
最低： 50
倍数： 50
|
|
|
Si
|
Through Hole
|
PDIP-8
|
N-Channel
|
2 Channel
|
10.6 V
|
80 mA
|
14 Ohms
|
- 12 V, 12 V
|
820 mV
|
0 C
|
+ 70 C
|
500 mW
|
Enhancement
|
EPAD
|
Tube
|
|
|
|
MOSFET Dual N-Ch Matched Pr VGS=0.0V
- ALD212908PAL
- Advanced Linear Devices
-
50:
¥53.9349
-
无库存
|
Mouser 零件编号
585-ALD212908PAL
|
Advanced Linear Devices
|
MOSFET Dual N-Ch Matched Pr VGS=0.0V
|
|
无库存
|
|
|
¥53.9349
|
|
|
¥44.9966
|
|
|
¥40.0359
|
|
|
¥37.4708
|
|
最低： 50
倍数： 50
|
|
|
Si
|
Through Hole
|
PDIP-8
|
N-Channel
|
2 Channel
|
10 V
|
79 mA
|
14 Ohms
|
- 12 V, 12 V
|
780 mV
|
0 C
|
+ 70 C
|
500 mW
|
Enhancement
|
EPAD
|
Tube
|
|
|
|
MOSFET Dual N-Ch Matched Pr VGS=0.0V
- ALD212914PAL
- Advanced Linear Devices
-
50:
¥70.1391
-
无库存
|
Mouser 零件编号
585-ALD212914PAL
|
Advanced Linear Devices
|
MOSFET Dual N-Ch Matched Pr VGS=0.0V
|
|
无库存
|
|
|
¥70.1391
|
|
|
¥58.4775
|
|
|
¥52.1156
|
|
|
¥48.7143
|
|
最低： 50
倍数： 50
|
|
|
Si
|
Through Hole
|
PDIP-8
|
N-Channel
|
2 Channel
|
10 V
|
79 mA
|
14 Ohms
|
- 12 V, 12 V
|
1.4 V
|
0 C
|
+ 70 C
|
500 mW
|
Enhancement
|
EPAD
|
Tube
|
|
