TK100A10N1,S4X
图像仅供参考
请参阅产品规格
请参阅产品规格
757-TK100A10N1S4X
TK100A10N1,S4X
制造商：
说明：
MOSFET MOSFET NCh 3.1ohm VGS10V10uAVDS100V
MOSFET MOSFET NCh 3.1ohm VGS10V10uAVDS100V
库存量: 141
-
库存：
-
141 可立即发货出现意外错误。请稍候重试。
-
生产周期：
-
20 周 大于所示数量的预计工厂生产时间。
定价 (含13% 增值税)
| 数量 | 单价 |
总价
|
|---|---|---|
| ¥46.4091 | ¥46.41 | |
| ¥24.4871 | ¥244.87 | |
| ¥22.826 | ¥2,282.60 | |
| ¥18.532 | ¥9,266.00 | |
| ¥18.3625 | ¥18,362.50 |
数据表
Application Notes
- Impacts of the dv/dt Rate on MOSFETs
- Impacts of the dv/dt Rate on MOSFETs
- MOSFET Avalanche Ruggedness
- MOSFET Avalanche Ruggedness
- MOSFET Gate Driver Circuit
- MOSFET Gate Driver Circuit
- MOSFET Parallening (Parasitic Oscillation Between Parallel Power MOSFETs)
- MOSFET Parallening (Parasitic Oscillation Between Parallel Power MOSFETs)
- Parasitic Oscillation and Ringing of Power MOSFETs
- Parasitic Oscillation and Ringing of Power MOSFETs
- Power MOSFET Electrical Characteristics
- Power MOSFET Electrical Characteristics
- Power MOSFET Maximum Ratings
- Power MOSFET Maximum Ratings
- Power MOSFET Selecting MOSFETs and Consideration for Circuit Design
- Power MOSFET Selecting MOSFETs and Consideration for Circuit Design
- Power MOSFET Structure and Characteristics
- Power MOSFET Structure and Characteristics
- Power MOSFET Thermal Design and Attachment of a Thermal Fin
- Power MOSFET Thermal Design and Attachment of a Thermal Fin
Models
Product Catalogs
Test/Quality Data
- CNHTS:
- 8541290000
- CAHTS:
- 8541290000
- USHTS:
- 8541290065
- JPHTS:
- 8541290100
- KRHTS:
- 8541299000
- TARIC:
- 8541290000
- MXHTS:
- 85412999
- ECCN:
- EAR99
