|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 HV6E 60W TO270-2N FET
- MRFE6S9060NR1
- NXP Semiconductors
-
1:
¥768.2644
-
532库存量
|
Mouser 零件编号
841-MRFE6S9060NR1
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 HV6E 60W TO270-2N FET
|
|
532库存量
|
|
|
¥768.2644
|
|
|
¥626.7432
|
|
|
¥563.1355
|
|
|
¥563.1355
|
|
最低: 1
倍数: 1
|
|
|
N-Channel
|
Si
|
1.5 A
|
66 V
|
1 GHz
|
21.1 dB
|
14 W
|
|
+ 150 C
|
Screw Mount
|
TO-270
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 LANDMOBILE 7W PLD1.5W
- AFT09MS007NT1
- NXP Semiconductors
-
1:
¥99.44
-
5,314库存量
|
Mouser 零件编号
841-AFT09MS007NT1
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 LANDMOBILE 7W PLD1.5W
|
|
5,314库存量
|
|
|
¥99.44
|
|
|
¥69.9244
|
|
|
¥59.5849
|
|
|
¥56.274
|
|
|
¥53.0761
|
|
|
查看
|
|
|
报价
|
|
最低: 1
倍数: 1
|
|
|
N-Channel
|
Si
|
3 A
|
30 V
|
136 MHz to 941 MHz
|
15.2 dB
|
7.3 W
|
- 40 C
|
+ 150 C
|
SMD/SMT
|
PLD-1.5
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Wideband RF Power LDMOS Transistors, 1.8-500 MHz, 1500 W CW, 50 V
- MRF1K50NR5
- NXP Semiconductors
-
1:
¥2,895.3086
-
41库存量
|
Mouser 零件编号
841-MRF1K50NR5
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Wideband RF Power LDMOS Transistors, 1.8-500 MHz, 1500 W CW, 50 V
|
|
41库存量
|
|
|
¥2,895.3086
|
|
|
¥2,392.8089
|
|
|
¥2,392.8089
|
|
|
查看
|
|
|
报价
|
|
最低: 1
倍数: 1
|
|
|
N-Channel
|
Si
|
36 A
|
133 V
|
1.8 MHz to 500 MHz
|
23 dB
|
1.5 kW
|
- 40 C
|
+ 150 C
|
SMD/SMT
|
OM-1230-4
|
Reel, Cut Tape
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 720-960 MHz 100 W AVG. 48 V
NXP Semiconductors AFV09P350-04NR3
- AFV09P350-04NR3
- NXP Semiconductors
-
1:
¥1,236.0279
-
207库存量
|
Mouser 零件编号
841-AFV09P350-04NR3
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 720-960 MHz 100 W AVG. 48 V
|
|
207库存量
|
|
|
¥1,236.0279
|
|
|
¥1,046.1088
|
|
|
¥980.6818
|
|
|
¥980.6818
|
|
最低: 1
倍数: 1
|
|
|
N-Channel
|
Si
|
|
105 V
|
720 MHz to 960 MHz
|
19.2 dB
|
100 W
|
- 40 C
|
+ 150 C
|
SMD/SMT
|
OM-780-4
|
Reel, Cut Tape
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 MV9 800MHZ 13.6V
- AFT09MS031NR1
- NXP Semiconductors
-
1:
¥166.9236
-
486库存量
|
Mouser 零件编号
841-AFT09MS031NR1
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 MV9 800MHZ 13.6V
|
|
486库存量
|
|
|
¥166.9236
|
|
|
¥132.7637
|
|
|
¥112.1638
|
|
|
¥112.0847
|
|
|
报价
|
|
|
报价
|
|
最低: 1
倍数: 1
|
|
|
N-Channel
|
Si
|
10 A
|
40 V
|
764 MHz to 941 MHz
|
15.7 dB
|
32 W
|
- 40 C
|
+ 150 C
|
SMD/SMT
|
TO-270-2
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Wideband Airfast RF Power LDMOS Transistor 136-941 MHz, 6.0 W, 7.5 V
- AFM906NT1
- NXP Semiconductors
-
1:
¥30.6908
-
1,038库存量
|
Mouser 零件编号
841-AFM906NT1
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Wideband Airfast RF Power LDMOS Transistor 136-941 MHz, 6.0 W, 7.5 V
|
|
1,038库存量
|
|
|
¥30.6908
|
|
|
¥21.1762
|
|
|
¥18.1139
|
|
|
¥17.5376
|
|
|
¥15.6279
|
|
最低: 1
倍数: 1
|
|
|
N-Channel
|
Si
|
4.7 A
|
30 V
|
136 MHz to 941 MHz
|
16.2 dB
|
6.5 W
|
- 40 C
|
+ 150 C
|
SMD/SMT
|
HVSON-16
|
Reel, Cut Tape
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Wideband RF Power LDMOS Transistor, 100 W CW over 1.8-250 MHz, 50 V
- MRF101BN
- NXP Semiconductors
-
1:
¥327.8808
-
247库存量
|
Mouser 零件编号
771-MRF101BN
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Wideband RF Power LDMOS Transistor, 100 W CW over 1.8-250 MHz, 50 V
|
|
247库存量
|
|
|
¥327.8808
|
|
|
¥237.7294
|
|
|
¥232.0229
|
|
|
查看
|
|
|
报价
|
|
最低: 1
倍数: 1
|
否
|
|
N-Channel
|
Si
|
8.8 A
|
133 V
|
1.8 MHz to 250 MHz
|
21.1 dB
|
115 W
|
- 40 C
|
+ 150 C
|
Through Hole
|
TO-220-3
|
Tube
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 MV9 75W 12.5V TO270WB4G
- AFT05MP075GNR1
- NXP Semiconductors
-
1:
¥265.7647
-
313库存量
|
Mouser 零件编号
841-AFT05MP075GNR1
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 MV9 75W 12.5V TO270WB4G
|
|
313库存量
|
|
|
¥265.7647
|
|
|
¥222.5874
|
|
|
¥189.2524
|
|
|
¥187.0263
|
|
最低: 1
倍数: 1
|
|
|
N-Channel
|
Si
|
8 A
|
40 V
|
136 MHz to 520 MHz
|
18.5 dB
|
70 W
|
- 40 C
|
+ 150 C
|
SMD/SMT
|
TO-270-WBG-4
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Wideband RF Power LDMOS Transistor, 100 W CW over 1.8-250 MHz, 50 V
- MRF101AN
- NXP Semiconductors
-
1:
¥381.8157
-
3,410库存量
|
Mouser 零件编号
771-MRF101AN
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Wideband RF Power LDMOS Transistor, 100 W CW over 1.8-250 MHz, 50 V
|
|
3,410库存量
|
|
|
¥381.8157
|
|
|
¥283.7995
|
|
|
¥265.9342
|
|
|
报价
|
|
|
报价
|
|
最低: 1
倍数: 1
|
|
|
N-Channel
|
Si
|
8.8 A
|
133 V
|
1.8 MHz to 250 MHz
|
21.1 dB
|
115 W
|
- 40 C
|
+ 150 C
|
Through Hole
|
TO-220-3
|
Tube
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Power LDMOS Transistor, 300 W CW over 1.8-250 MHz, 50 V
- MRF300AN
- NXP Semiconductors
-
1:
¥778.9768
-
313库存量
|
Mouser 零件编号
771-MRF300AN
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Power LDMOS Transistor, 300 W CW over 1.8-250 MHz, 50 V
|
|
313库存量
|
|
|
¥778.9768
|
|
|
¥622.1215
|
|
|
¥587.4644
|
|
|
查看
|
|
|
报价
|
|
最低: 1
倍数: 1
|
|
|
N-Channel
|
Si
|
30 A
|
133 V
|
1.8 MHz to 250 MHz
|
20.4 dB
|
330 W
|
- 40 C
|
+ 150 C
|
Through Hole
|
TO-247-3
|
Tube
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 VHV6 300W50VISM NI780H-4
- MRFE6VP6300HR5
- NXP Semiconductors
-
1:
¥3,123.1053
-
513库存量
|
Mouser 零件编号
841-MRFE6VP6300HR5
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 VHV6 300W50VISM NI780H-4
|
|
513库存量
|
|
|
¥3,123.1053
|
|
|
¥2,598.435
|
|
|
¥2,598.435
|
|
|
查看
|
|
|
报价
|
|
最低: 1
倍数: 1
|
|
|
N-Channel
|
Si
|
|
130 V
|
1.8 MHz to 600 MHz
|
26.5 dB
|
300 W
|
|
+ 150 C
|
Screw Mount
|
NI-780-4
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 65V LDMOS Transistor
- MRFX1K80HR5
- NXP Semiconductors
-
1:
¥3,306.9902
-
21库存量
|
Mouser 零件编号
771-MRFX1K80HR5
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 65V LDMOS Transistor
|
|
21库存量
|
|
|
¥3,306.9902
|
|
|
¥2,862.7194
|
|
|
¥2,862.7194
|
|
最低: 1
倍数: 1
|
|
|
N-Channel
|
Si
|
43 A
|
179 V
|
1.8 MHz to 400 MHz
|
25.1 dB
|
1.8 kW
|
- 40 C
|
+ 150 C
|
Screw Mount
|
NI-1230H-4
|
Reel, Cut Tape
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 65V LDMOS 1800W CW 1.8-400MHz
- MRFX1K80NR5
- NXP Semiconductors
-
1:
¥2,890.0993
-
19库存量
|
Mouser 零件编号
771-MRFX1K80NR5
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 65V LDMOS 1800W CW 1.8-400MHz
|
|
19库存量
|
|
|
¥2,890.0993
|
|
|
¥2,356.6602
|
|
|
¥2,356.6602
|
|
|
查看
|
|
|
报价
|
|
最低: 1
倍数: 1
|
|
|
N-Channel
|
Si
|
43 A
|
179 V
|
1.8 MHz to 400 MHz
|
24.4 dB
|
1.8 kW
|
- 40 C
|
+ 150 C
|
SMD/SMT
|
OM-1230-4
|
Reel, Cut Tape
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 MV9 75W 12.5V TO270WB4
- AFT05MP075NR1
- NXP Semiconductors
-
1:
¥426.236
-
154库存量
|
Mouser 零件编号
841-AFT05MP075NR1
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 MV9 75W 12.5V TO270WB4
|
|
154库存量
|
|
|
¥426.236
|
|
|
¥335.7456
|
|
|
¥310.8517
|
|
|
¥297.6081
|
|
|
查看
|
|
|
报价
|
|
最低: 1
倍数: 1
|
|
|
N-Channel
|
Si
|
8 A
|
40 V
|
136 MHz to 520 MHz
|
18.5 dB
|
70 W
|
- 40 C
|
+ 150 C
|
SMD/SMT
|
TO-270-WB-4
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Wideband RF Power LDMOS Transistor, 136-941 MHz, 4 W, 7.5 V
- AFT05MS004NT1
- NXP Semiconductors
-
1:
¥32.4197
-
6,398库存量
|
Mouser 零件编号
841-AFT05MS004NT1
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Wideband RF Power LDMOS Transistor, 136-941 MHz, 4 W, 7.5 V
|
|
6,398库存量
|
|
|
¥32.4197
|
|
|
¥22.4192
|
|
|
¥19.1874
|
|
|
¥18.532
|
|
|
¥17.3681
|
|
|
¥17.289
|
|
最低: 1
倍数: 1
|
|
|
N-Channel
|
Si
|
4 A
|
30 V
|
136 MHz to 941 MHz
|
20.9 dB
|
4.9 W
|
- 40 C
|
+ 150 C
|
SMD/SMT
|
SOT-89-3
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 MV9 UHF 13.6V
- AFT05MS031GNR1
- NXP Semiconductors
-
1:
¥238.0571
-
365库存量
-
875预期 2026/3/17
|
Mouser 零件编号
841-AFT05MS031GNR1
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 MV9 UHF 13.6V
|
|
365库存量
875预期 2026/3/17
|
|
|
¥238.0571
|
|
|
¥186.8568
|
|
|
¥166.8332
|
|
|
¥164.5167
|
|
|
查看
|
|
|
报价
|
|
最低: 1
倍数: 1
|
|
|
N-Channel
|
Si
|
7.5 A
|
40 V
|
136 MHz to 520 MHz
|
17.7 dB
|
33 W
|
- 40 C
|
+ 150 C
|
SMD/SMT
|
TO-270-2
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 MV9 UHF 13.6V
- AFT05MS031NR1
- NXP Semiconductors
-
1:
¥192.891
-
519库存量
|
Mouser 零件编号
841-AFT05MS031NR1
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 MV9 UHF 13.6V
|
|
519库存量
|
|
|
¥192.891
|
|
|
¥148.5611
|
|
|
¥132.1761
|
|
|
¥131.0235
|
|
|
报价
|
|
|
报价
|
|
最低: 1
倍数: 1
|
|
|
N-Channel
|
Si
|
7.5 A
|
40 V
|
136 MHz to 520 MHz
|
17.7 dB
|
33 W
|
- 40 C
|
+ 150 C
|
SMD/SMT
|
TO-270-2
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 LATERAL N--CHANNEL RF POWER LDMOS TRANSISTOR, 1-2000 MHz, 4 W, 28 V
- MMRF1014NT1
- NXP Semiconductors
-
1:
¥169.4887
-
584库存量
|
Mouser 零件编号
841-MMRF1014NT1
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 LATERAL N--CHANNEL RF POWER LDMOS TRANSISTOR, 1-2000 MHz, 4 W, 28 V
|
|
584库存量
|
|
|
¥169.4887
|
|
|
¥129.1251
|
|
|
¥115.4747
|
|
|
¥114.3108
|
|
|
¥111.3389
|
|
|
查看
|
|
|
报价
|
|
最低: 1
倍数: 1
|
|
|
N-Channel
|
Si
|
50 mA
|
68 V
|
1 MHz to 2 GHz
|
19 dB
|
4 W
|
|
+ 150 C
|
SMD/SMT
|
PLD-1.5
|
Reel, Cut Tape
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 VHV6 600W 50V NI1230H
- MRFE6VP5600HR5
- NXP Semiconductors
-
1:
¥6,964.1109
-
50库存量
|
Mouser 零件编号
841-MRFE6VP5600HR5
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 VHV6 600W 50V NI1230H
|
|
50库存量
|
|
|
¥6,964.1109
|
|
|
¥5,798.143
|
|
|
¥5,798.143
|
|
最低: 1
倍数: 1
|
|
|
N-Channel
|
Si
|
2 A
|
130 V
|
1.8 MHz to 600 MHz
|
25 dB
|
600 W
|
|
+ 150 C
|
SMD/SMT
|
NI-1230
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 VHV6 600W 50V NI1230H
- MRFE6VP5600HR6
- NXP Semiconductors
-
1:
¥2,600.1752
-
无库存交货期 53 周
|
Mouser 零件编号
841-MRFE6VP5600HR6
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 VHV6 600W 50V NI1230H
|
|
无库存交货期 53 周
|
|
|
¥2,600.1752
|
|
|
¥2,142.4235
|
|
|
¥2,062.8489
|
|
|
¥2,062.8489
|
|
|
报价
|
|
|
报价
|
|
最低: 1
倍数: 1
|
|
|
N-Channel
|
Si
|
|
130 V
|
1.8 MHz to 600 MHz
|
25 dB
|
600 W
|
|
+ 150 C
|
SMD/SMT
|
NI-1230
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 VHV6 1.25KW ISM NI1230H
- MRFE6VP61K25HR5
- NXP Semiconductors
-
1:
¥3,405.1646
-
111库存量
|
Mouser 零件编号
841-MRFE6VP61K25HR5
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 VHV6 1.25KW ISM NI1230H
|
|
111库存量
|
|
|
¥3,405.1646
|
|
|
¥2,948.6559
|
|
|
¥2,948.6559
|
|
最低: 1
倍数: 1
|
|
|
N-Channel
|
Si
|
30 A
|
133 V
|
1.8 MHz to 600 MHz
|
24 dB
|
1.25 kW
|
|
+ 150 C
|
Screw Mount
|
NI-1230H-4
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 300W 200MHZ TO-247-3L
NXP Semiconductors MHT1803B
- MHT1803B
- NXP Semiconductors
-
1:
¥313.9931
-
341库存量
|
Mouser 零件编号
771-MHT1803B
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 300W 200MHZ TO-247-3L
|
|
341库存量
|
|
|
¥313.9931
|
|
|
¥257.414
|
|
|
¥228.4634
|
|
|
查看
|
|
|
报价
|
|
最低: 1
倍数: 1
|
|
|
N-Channel
|
Si
|
|
|
1.8 MHz to 50 MHz
|
28.2 dB
|
300 W
|
|
+ 150 C
|
Through Hole
|
TO-247-3
|
Tube
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 VHV6 10W PULSE PLD1.5
- MRF6V10010NR4
- NXP Semiconductors
-
1:
¥1,394.2618
-
1库存量
|
Mouser 零件编号
841-MRF6V10010NR4
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 VHV6 10W PULSE PLD1.5
|
|
1库存量
|
|
|
¥1,394.2618
|
|
|
¥1,158.1935
|
|
|
¥1,071.3417
|
|
|
报价
|
|
|
报价
|
|
最低: 1
倍数: 1
|
|
|
N-Channel
|
Si
|
|
100 V
|
960 MHz to 1.4 GHz
|
25 dB
|
10 W
|
- 65 C
|
+ 150 C
|
Screw Mount
|
PLD-1.5
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Airfast RF Power LDMOS Transistor, 700 W Pulse over 960-1215 MHz, 52 V
- AFV10700GSR5
- NXP Semiconductors
-
50:
¥6,323.8077
-
无库存交货期 16 周
|
Mouser 零件编号
771-AFV10700GSR5
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Airfast RF Power LDMOS Transistor, 700 W Pulse over 960-1215 MHz, 52 V
|
|
无库存交货期 16 周
|
|
最低: 50
倍数: 50
|
|
|
N-Channel
|
Si
|
2.6 A
|
105 V
|
1.03 GHz to 1.09 GHz
|
19.2 dB
|
700 W
|
- 55 C
|
+ 150 C
|
SMD/SMT
|
NI-780GS-4L
|
Reel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Power LDMOS Transistor for Consumer and Commercial Cooking, 1.8-50 MHz, 300 W CW, 50 V
- MHT1803A
- NXP Semiconductors
-
240:
¥215.8865
-
无库存交货期 16 周
|
Mouser 零件编号
771-MHT1803A
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Power LDMOS Transistor for Consumer and Commercial Cooking, 1.8-50 MHz, 300 W CW, 50 V
|
|
无库存交货期 16 周
|
|
|
¥215.8865
|
|
|
查看
|
|
|
报价
|
|
最低: 240
倍数: 240
|
|
|
N-Channel
|
Si
|
|
|
1.8 MHz to 50 MHz
|
28.2 dB
|
330 W
|
|
+ 150 C
|
Through Hole
|
TO-247-3
|
Tube
|
|