Infineon Technologies CoolMOS™ 功率晶体管

Infineon has expanded its offering of CoolMOS® Power Transistors that use a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle. These CoolMOS® Power Transistors provide all the benefits of a fast switching SJ MOSFET while offering an extremely fast and robust body diode. Infineon CoolMOS® Power Transistors are especially suited for resonant switching PWM stages for PC Silverbox, LCD TV, lighting, server, and telecom applications.

C3 MOSFETs

Infineon 500V/600V/650V CoolMOS™ C3 MOSFETs achieve extremely low conduction and switching losses thanks to a low specific on-state resistance (R_DS(on)*A), making switching applications more efficient. These devices use field-proven CoolMOS quality that offers outstanding cost and performance. These MOSFETs are ideal for use in server, telecom, consumer, PC power, and adapter applications.

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Infineon 800V CoolMOS™ C3 MOSFETs achieve extremely low conduction and switching losses thanks to a low specific on-state resistance (R_DS(on)*A), making switching applications more efficient, more compact, lighter, and cooler. Moreover, this series offers an outstanding cost/performance ratio. The 800V CoolMOS™ C3 products have been optimized for ease of use and efficiency in applications such as Solar Inverters, Industrial Inverters, 3-phase topologies, PC Power, Adapter, LCD TV, and Lighting.

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Infineon 900V CoolMOS™ C3 MOSFETs enable a drastic reduction of the on-resistance (R_DS(on)) by a factor of four or more per package type compared to other 900V conventional MOSFETs, based on the device concept of charge compensation. 900V CoolMOS™C3 also offers a very low figure-of-merit on-resistance times gate charge (R_DS(on)*Q_g) of 34W*nC, translating into low conduction, driving, and switching losses. The 900V CoolMOS™ C3 is well suited for high-efficiency switch-mode power supplies, industry, and renewable energies applications.

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C6/E6 High Voltage Power MOSFETs

Infineon CoolMOS™ C6/E6 MOSFETs are the sixth generation of high voltage power MOSFETs designed according to the revolutionary Superjunction (SJ) principle. The CoolMOS™ C6/E6 series combines Infineon's experience as the leading SJ MOSFET supplier with best-in-class innovation. The resulting C6/E6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. C6/E6 achieves extremely low conduction and switching losses and can make switching applications more efficient, more compact, lighter, and cooler. Moreover, it represents the best cost/performance ratio on the market today. The C6 devices have been optimized for ease of use. The E6 devices have been optimized for the highest efficiency in DCM applications.

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C7 MOSFETs

Infineon 600V CoolMOS™ C7 MOSFETs offer approximately 50% reduction in turn-off losses (EOSS) compared to the CoolMOS™ CP. They offer a GaN-like level of performance in PFC, TTF, and other hard-switching topologies, and extend the use of silicon MOSFETs to the next generation of highest efficiency power designs. The CoolMOS™ C7 offers gains of 0.3% to 0.7% in PFC stages versus its predecessor CoolMOS™ CP. Further efficiency gains can found in the highest power designs with the TO-247 4-pin package. On average, CoolMOS™ C7 with a TO-247 4-pin package boosts efficiency by 0.4%.

Infineon 650V CoolMOS™ C7 MOSFETs bring a new level of performance in hard switching applications such as power factor correction (PFC) when an additional 50V of breakdown voltage is needed versus 600V CoolMOS™ C7. It provides efficiency benefits across the whole load range by balancing several key parameters. The best-in-class R_DS(on) leads to increased full load efficiency and enables power density benefits by using smaller packages for the same R_DS(on). The E_OSS reduction brings efficiency benefits at light load and the low Q_G correlates to faster switching. The very low E_OSS and Q_G are the two key parameters in enabling no efficiency loss when moving up in switching frequency. This also enables power density benefits by reducing the size of the circuits' magnetic components.

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CE MOSFETs

Infineon 500V CoolMOS™ CE MOSFETs combine the experience of the leading Superjunction MOSFET supplier with high-class innovation, Infineon widens CoolMOS™ portfolio offering new 500V CoolMOS™ CE series. As a new technology platform on market leading high voltage power MOSFETs, the new devices provide all benefits of fast switching Superjunction MOSFETs while not sacrificing ease of use. In price-sensitive and targeted applications such as Consumer, PC Silverboxes, and Lighting, 500V CoolMOS™ CE offers the best price-performance ratio on the market while meeting higher efficiency standards. Delivering all the benefits of a modern Superjunction MOSFET such as low area-specific on-state resistance and reduced energy stored in output capacitance, the 500V CoolMOS™ CE series provides a high body diode ruggedness, achieves extremely low conduction and switching losses, and can make switching applications more efficient, more compact, lighter and cooler.

Infineon 600V/650V/700V CoolMOS™ CE MOSFETs are a technology platform of Infineon´s market-leading high voltage power MOSFET designed according to the superjunction principle (SJ) and conceived to fulfill consumer requirements. With the extended family, Infineon offers 600V, 650V, and 700V devices targeting low power chargers for mobile devices and power tools, LCD, LED TV, and LED lighting applications. This series of CoolMOS™ is cost-optimized to meet typical requirements in consumers with no compromise on proven CoolMOS™ quality and reliability while still been price attractive.

Infineon 800V CoolMOS™ CE MOSFETs are Infineon's high-performance device family offering 800V breakdown voltage. Designed according to the revolutionary Superjunction (SJ) principle, it provides all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. The new 800V CE selection series specifically aims at LED applications, complementing the 500V CoolMOS™ CE and 600V/650V CoolMOS CE families, which target consumer electronics applications and lighting. With this specific CoolMOS™ CE family, Infineon combines long experience as the leading SJ MOSFET supplier with Best-in-Class innovation. The low R_DS(on) enables low conduction and switching losses. Also, it makes switching applications more efficient, more compact, lighter, and cooler. In the growing LED market 800V CoolMOS™ CE offers an outstanding price/performance ratio providing a competitive edge while being optimized for ease of use and efficiency in such applications.

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CFD/CFD2 MOSFETs

Infineon CoolMOS™ CFD/CFD2 MOSFETs are part of a recent trend in high power conversion, which is the move toward higher and higher power density. High power density can be achieved best by resonant switching topologies such as zero voltage or zero current switching, which enable higher efficiency by eliminating the turn-on losses. The CFD2 devices are the first 650V technology with integrated fast body diode on the market. The CFD2 devices offer limited voltage overshoot during hard commutation and provide significant Q_g reduction compared to 600V CFD technology.

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CFD7 Superjunction MOSFETs

Infineon 600V CoolMOS™ CFD7 High Voltage Superjunction MOSFETs are ideal for resonant high power topologies and feature the latest high voltage superjunction MOSFET technology. The MOSFETs have an integrated fast body diode and complete the CoolMOS 7 series. Typical high power SMPS applications include server, telecom, and EV charging stations.

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CP MOSFETs

Infineon CoolMOS™ CP MOSFETs are a part of a trend in SMPS applications of system miniaturization and efficiency improvement put tough demands on power semiconductor performance. This series meets these demands by offering a dramatic reduction of drain-source on-resistance (RDSon) in a given package, ultra-low total gate charge, and very low energy stored in the output capacitance. The first products in this family were introduced in 2005, with a fill-up of the product spectrum and introduction of a 500V class during 2006. Target applications are server and telecom power supplies, notebook adapters, LCD TV, ATX and gaming power supplies, and lighting ballasts.

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CPA/CFDA Power MOSFETs

Infineon 600V CoolMOS™ CPA Power MOSFET and 650V CoolMOS™ CFDA Power MOSFETs provide all benefits of a fast switching Superjunction MOSFET. The families fulfill the enhanced reliability requirements of automotive applications, realized with special screening measures in front end and back end and qualification compliant to AEC-Q100. With its integrated fast body diode, 650V CoolMOS™ CFDA additionally caters to special application needs. This fast body diode is the key to addressing resonant switching topologies resulting in lower switching losses due to the low gate charge. The softer commutation behavior and consequent reduced EMI appearance give the 650V CoolMOS™ CFDA series a clear advantage in comparison to competitor parts. Furthermore, limited voltage overshoot during hard commutation of the body Diode enables the easier implementation of layout and design.

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G7 Power MOSFETs

Infineon CoolMOS™ G7 Power MOSFETs are housed in the new SMD TO-Leadless (TOLL) package using the Kelvin source concept. The G7 MOSFETs combine improved 600V and 650V CoolMOS™ G7 technology, 4-pin Kelvin source capability, and the improved thermal properties of the TO-Leadless package. This enables an SMD solution for high current hard switching topologies like power factor correction (PFC) up to 3kW. For the 600V CoolMOS™ G7, the MOSFETs can be used for resonant circuits like high-end LLC.

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P6 MOSFETs

Infineon 600V CoolMOS™ P6 MOSFETs are a general-purpose part suitable for most high power applications, which require excellent performance, yet also a high level of ease-of-use in the design-in process. CoolMOS™ P6 is suitable for both soft and hard switching applications due to its good body diode ruggedness. Optimizations such as Q_G, V_th, E_on, and E_off enable its superior efficiency, while its ease-of-use feature is attributed to the optimized dV/dt (di/dt) controllability, internal R_G, and improved oscillation behavior.

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P7 Power Transistors

Infineon 600V CoolMOS P7 Power Transistors are 7th generation devices and utilize revolutionary technology for high voltage power MOSFETs. The transistors are designed according to the superjunction (SJ) principle and pioneered by Infineon. The 600V CoolMOS P7 combines the benefits of a fast switching SJ MOSFET with excellent ease of use. The 600V P7 features very low ringing tendency, outstanding robustness of body diode against hard commutation, and excellent ESD capability. Extremely low switching and conduction losses make switching applications even more efficient, compact, and cooler.

Infineon CoolMOS™ 700V P7 Power Transistors feature CoolMOS, a revolutionary technology for high voltage power MOSFETs. The 700V is designed according to the superjunction (SJ) principle and pioneered by Infineon. The latest 700V CoolMOS P7 is an optimized platform tailored to target cost-sensitive applications in consumer markets like chargers, adapters, lighting, TVs, and more. The new series provides all the benefits of a fast switching Superjunction MOSFET, combined with an excellent price/performance ratio and state of the art ease-of-use level. The technology meets the highest efficiency standards and supports high power density, enabling customers to go towards very slim designs.

Infineon 800V CoolMOS™ P7 MOSFETs sets a new benchmark in 800V superjunction technologies and combines best-in-class performance with state-of-the-art ease-of-use. This is a result of Infineon’s more than 18 years of pioneering superjunction technology innovation. This product family offers 0.1 percent to 0.6 percent efficiency gain and 2°C to 8°C lower MOSFET temperature as compared to 800V CoolMOS™ C3 tested in flyback based applications. Such best-in-class performance comes from a combination of various optimized device parameters such as a more than 50 percent reduction in E_OSS and Q_g and reduced C_iss and C_oss. This new product family is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use, and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED lighting, audio SMPS, AUX, and industrial power.

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Infineon Power and Sensing Selection Guide