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Intelligent Memory 2G/4G/8Gbit LPDDR4 DRAM with ECC

Intelligent Memory 2G/4G/8Gbit Low-Power Double Data Rate DRAM (LPDDR4) with integrated error correction (ECC) operates over the industrial temperature range and consumes less energy. The LPDDR4 devices feature a low 1.8V power supply and 1.1V at input/output. These AEC-Q100-qualified components offer a 1600MHz maximum speed with a 3200Mbps data rate and are available in a 200-ball FBGA package.

Features

  • Configuration options
    • 128Mx16 (8x banks x 16Mbit x16 x1 channel)
    • 64Mx32 (8x banks x 8Mbit x16 x2 channels)
    • 256Mx16 (8x banks x 32Mbit x16 x1 channel)
    • 128Mx32 (8x banks x 16Mbit x16 x2 channels)
    • 256Mx32 (8x banks x 32Mbit x16 x2 channels)
  • On-chip ECC
    • Integrated SEC-DED (Single Error Correction, Double-Error Detection) logic, which maximizes reliability
    • Hardware ERR signal for each channel, configurable via a mode register
    • ECC Register, which controls ECC function
  • Low-voltage core and I/O power supplies
  • LVSTL (Low Voltage Swing Terminated Logic) I/O interface
  • Internal VREF and VREF training
  • Dynamic ODT
    • DQ ODT: VSSQ termination
    • CA ODT: VSS termination
  • Selectable output drive strength (DS)
  • 16-bit pre-fetch DDR data bus
  • Single data rate (multiple cycles) command/address bus
  • Bidirectional/differential data strobe per byte of data
  • DMI pin support for write data masking and DBI functionality
  • Programmable READ and WRITE latencies (RL/WL)
  • Programmable and on-the-fly burst lengths
  • Support non-target DRAM ODT control
  • Directed per-bank refresh for concurrent bank operation and ease of command scheduling
  • ZQ calibration
  • On-chip temperature sensor to control self-refresh rate
  • On-chip temperature sensor whose status can be read from MR4
  • 200-ball FBGA (10mm x 14.5mm) for x16/x32 discrete package (ball pitch 0.80mm x 0.65mm)
  • Fully compatible with JEDEC standard DRAM operation and timings
  • AEC-Q100 qualified

Applications

  • Commercial
  • Industrial
  • Automotive

Specifications

  • 1.06V to 1.17V supply voltage range
  • 4Gbit or 8Gbit memory size options
  • 0.625ns or 0.833ns clock cycle time options
  • 18mA to 36mA supply current range
  • 1.6GHz maximum clock frequency, 3.2Gbps for one channel
  • Leakage current
    • ±4µA input
    • ±5µA input/output
  • ±40ps or ±50ps clock period jitter options
  • 1600MHz maximum speed with a 3200Mbps data rate
  • 1V/ns input slew rate
  • Temperature ranges
    • 0 to +95°C commercial
    • -40°C to +95°C industrial
    • -40°C to +105°C high
    • -40°C to +125°C extreme

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发布日期: 2023-06-28 | 更新日期: 2025-09-09