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IXYS 1700V XPT™高压IGBT

IXYS 1700V XPT™ (eXtreme-light Punch Through) IGBT设计用于高压高速电源转换应用。该IGBT采用专有的薄晶圆XPT™技术开发而成，具有更低的热阻、低拖尾电流、低能量损耗和高速开关能力。这些器件的导通电压的正温度系数使设计人员能够并联使用IGBT。该功能允许减少相关的栅极驱动电路，设计更简单，并提高整体系统可靠性。共封装快速恢复二极管提供低反向恢复时间。快速恢复二极管针对平滑开关波形进行了优化，显著降低了电磁干扰 (EMI)。

The devices' positive temperature coefficient of the on-state voltage enables designers to use the IGBTs in parallel. This capability allows a reduction in the associated gate drive circuitry, a simpler design, and an improvement in overall system reliability.

The co-packed fast recovery diodes offer low reverse recovery times. The fast recovery diodes are optimized for smooth switching waveforms and significantly lower electromagnetic interference (EMI).

特性

  • Thin wafer XPT technology
  • Low on-state voltages VCE (sat)
  • Co-packed fast recovery diodes
  • Positive temperature coefficient of VCE (sat)
  • International standard size high-voltage packages
  • High efficiency
  • Elimination of multiple series-connected devices
  • Increased reliability of power systems
  • High voltage package
  • High blocking voltage
  • Low saturation voltage
  • Low gate drive requirement
  • High power density

应用

  • Switch-mode and resonant-mode power supplies
  • High-voltage power supplies
  • High-voltage test equipment
  • Uninterruptible power supplies (UPS)
  • Laser and X-ray generators
  • Capacitor-discharge circuits
  • AC switches
发布日期: 2017-07-10 | 更新日期: 2022-03-29